| No. |
Part Name |
Description |
Manufacturer |
| 721 |
1N827-1E3 |
Temperature Compensated Zeners (TCZ) |
Microsemi |
| 722 |
1N827A |
Leaded Zener Diode Temperature Compensated |
Central Semiconductor |
| 723 |
1N827A |
TEMPERATURE COMPENSATED ZENER REFERENCE DIODES |
Compensated Devices Incorporated |
| 724 |
1N827A |
Temperature-compesated zener reference diode |
Motorola |
| 725 |
1N827A |
TEMPERATURECOMPENSATED SILICON ZENER REFERENCE DIODES 6.2 V, 400 mW |
Motorola |
| 726 |
1N827A |
Voltage reference diode (temperature compensated)Silicon signal diode - high voltage switching |
SESCOSEM |
| 727 |
1N827A |
Silicon Voltage Reference Diode temperature compensated 6.2V |
Transitron Electronic |
| 728 |
1N827A-1 |
Temperature Compensated Zeners (TCZ) |
Microsemi |
| 729 |
1N827A-1E3 |
Temperature Compensated Zeners (TCZ) |
Microsemi |
| 730 |
1N827UR |
6.2 & 6.55 Volt Temperature Compensated Surface Mount Zener Reference Diodes |
Microsemi |
| 731 |
1N827UR-1E3 |
Temperature Compensated Zeners (TCZ) |
Microsemi |
| 732 |
1N828 |
TEMPERATURE COMPENSATED ZENER REFERENCE DIODES |
Compensated Devices Incorporated |
| 733 |
1N828-1 |
6.2 & 6.55 VOLT TEMPERATURE COMPENSATED ZENER REFERENCE DIODES |
Microsemi |
| 734 |
1N828-1e3 |
Temperature Compensated Zeners (TCZ) |
Microsemi |
| 735 |
1N828A |
6.2 & 6.55 VOLT TEMPERATURE COMPENSATED ZENER REFERENCE DIODES |
Microsemi |
| 736 |
1N828UR |
6.2 & 6.55 Volt Temperature Compensated Surface Mount Zener Reference Diodes |
Microsemi |
| 737 |
1N828UR-1 |
Temperature Compensated Zeners (TCZ) |
Microsemi |
| 738 |
1N828UR-1e3 |
Temperature Compensated Zeners (TCZ) |
Microsemi |
| 739 |
1N829 |
Leaded Zener Diode Temperature Compensated |
Central Semiconductor |
| 740 |
1N829 |
TEMPERATURE COMPENSATED ZENER REFERENCE DIODES |
Compensated Devices Incorporated |
| 741 |
1N829 |
Temperature-compesated zener reference diode |
Motorola |
| 742 |
1N829 |
TEMPERATURECOMPENSATED SILICON ZENER REFERENCE DIODES 6.2 V, 400 mW |
Motorola |
| 743 |
1N829 |
Voltage reference diode (temperature compensated)Silicon signal diode - high voltage switching |
SESCOSEM |
| 744 |
1N829 |
Silicon Voltage Reference Diode temperature compensated 6.2V, Military Version USN/JAN |
Transitron Electronic |
| 745 |
1N829-1 |
6.2 & 6.55 VOLT TEMPERATURE COMPENSATED ZENER REFERENCE DIODES |
Microsemi |
| 746 |
1N829-1E3 |
Temperature Compensated Zeners (TCZ) |
Microsemi |
| 747 |
1N829A |
Leaded Zener Diode Temperature Compensated |
Central Semiconductor |
| 748 |
1N829A |
TEMPERATURE COMPENSATED ZENER REFERENCE DIODES |
Compensated Devices Incorporated |
| 749 |
1N829A |
Temperature-compesated zener reference diode |
Motorola |
| 750 |
1N829A |
TEMPERATURECOMPENSATED SILICON ZENER REFERENCE DIODES 6.2 V, 400 mW |
Motorola |
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