| No. |
Part Name |
Description |
Manufacturer |
| 721 |
1N4446 |
Diode Switching 100V 0.2A 2-Pin DO-35 |
New Jersey Semiconductor |
| 722 |
1N4446 |
Silicon signal diode - high speed switching |
SESCOSEM |
| 723 |
1N4446 |
Glass passivated silicon switching diodes for medium and small currents |
Texas Instruments |
| 724 |
1N4446 |
Silicon epitaxial planar diode, ultra high speed switching applications |
TOSHIBA |
| 725 |
1N4447 |
Silicon epitaxial planar diodes for extreme speed switching applications |
AEG-TELEFUNKEN |
| 726 |
1N4447 |
75 V, 500 mW high conductance ultra fast switching diode |
BKC International Electronics |
| 727 |
1N4447 |
SMALL SIGNAL SWITCHING DIODE |
Chenyi Electronics |
| 728 |
1N4447 |
High speed switching diode |
IPRS Baneasa |
| 729 |
1N4447 |
Silicon switching diode |
IPRS Baneasa |
| 730 |
1N4447 |
GLASS-CASE, FAST SWITCHING DIODE Equivalent type 1N916A |
IPRS Baneasa |
| 731 |
1N4447 |
Switching Diode |
ITT Semiconductors |
| 732 |
1N4447 |
Diode Switching 100V 0.2A 2-Pin DO-35 |
New Jersey Semiconductor |
| 733 |
1N4447 |
Silicon signal diode - high speed switching |
SESCOSEM |
| 734 |
1N4447 |
SMALL SIGNAL SWITCHING DIODE |
Shanghai Sunrise Electronics |
| 735 |
1N4447 |
Silicon epitaxial planar diode, ultra high speed switching applications |
TOSHIBA |
| 736 |
1N4447A |
Diode Switching 100V 0.2A 2-Pin DO-35 |
New Jersey Semiconductor |
| 737 |
1N4448 |
Silicon epitaxial planar diodes for extreme speed switching applications |
AEG-TELEFUNKEN |
| 738 |
1N4448 |
Leaded Silicon Diode Switching |
Central Semiconductor |
| 739 |
1N4448 |
SMALL SIGNAL SWITCHING DIODE |
Chenyi Electronics |
| 740 |
1N4448 |
Fast Switching Diode |
Comchip Technology |
| 741 |
1N4448 |
TECHNICAL SPECIFICATIONS OF HIGH SPEED SWITCHING DIODES |
DC Components |
| 742 |
1N4448 |
Switching Diodes |
Diodes |
| 743 |
1N4448 |
High-speed switching diode |
Formosa MS |
| 744 |
1N4448 |
High speed switching diode |
IPRS Baneasa |
| 745 |
1N4448 |
Silicon switching diode |
IPRS Baneasa |
| 746 |
1N4448 |
GLASS-CASE, FAST SWITCHING DIODE Equivalent type 1N914B |
IPRS Baneasa |
| 747 |
1N4448 |
Switching Diode |
ITT Semiconductors |
| 748 |
1N4448 |
500mW 100Volt Switching Diode |
Micro Commercial Components |
| 749 |
1N4448 |
Diode Switching 100V 0.2A 2-Pin DO-35 |
New Jersey Semiconductor |
| 750 |
1N4448 |
Silicon signal diode - high speed switching |
SESCOSEM |
| | | |
