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Datasheets for 0V,

Datasheets found :: 15689
Page: | 241 | 242 | 243 | 244 | 245 | 246 | 247 | 248 | 249 |
No. Part Name Description Manufacturer
7321 KBU8005-G Bridge Rectifiers, VRRM=50V, VDC=50V, I(AV)=8A Comchip Technology
7322 KBU801-G Bridge Rectifiers, VRRM=100V, VDC=100V, I(AV)=8A Comchip Technology
7323 KBU801-G Bridge Rectifiers, VRRM=100V, VDC=100V, I(AV)=8A Comchip Technology
7324 KBU802-G Bridge Rectifiers, VRRM=100V, VDC=100V, I(AV)=8A Comchip Technology
7325 KBU802-G Bridge Rectifiers, VRRM=100V, VDC=100V, I(AV)=8A Comchip Technology
7326 KBU804-G Bridge Rectifiers, VRRM=400V, VDC=400V, I(AV)=8A Comchip Technology
7327 KBU804-G Bridge Rectifiers, VRRM=400V, VDC=400V, I(AV)=8A Comchip Technology
7328 KBU806-G Bridge Rectifiers, VRRM=600V, VDC=600V, I(AV)=8A Comchip Technology
7329 KBU806-G Bridge Rectifiers, VRRM=600V, VDC=600V, I(AV)=8A Comchip Technology
7330 KBU808-G Bridge Rectifiers, VRRM=800V, VDC=800V, I(AV)=8A Comchip Technology
7331 KBU808-G Bridge Rectifiers, VRRM=800V, VDC=800V, I(AV)=8A Comchip Technology
7332 KBU810-G Bridge Rectifiers, VRRM=1000V, VDC=1000V, I(AV)=8A Comchip Technology
7333 KBU810-G Bridge Rectifiers, VRRM=1000V, VDC=1000V, I(AV)=8A Comchip Technology
7334 KF12N60F ��VDSS=600V, ID=12A Korea Electronics (KEC)
7335 KM416C1004CJ-45 1M x 16Bit CMOS dynamic RAM with extended data out, 45ns, VCC=5.0V, refresh period=64ms Samsung Electronic
7336 KM416C1004CJ-5 1M x 16Bit CMOS dynamic RAM with extended data out, 50ns, VCC=5.0V, refresh period=64ms Samsung Electronic
7337 KM416C1004CJ-6 1M x 16Bit CMOS dynamic RAM with extended data out, 60ns, VCC=5.0V, refresh period=64ms Samsung Electronic
7338 KM416C1004CJL-45 1M x 16Bit CMOS dynamic RAM with extended data out, 45ns, VCC=5.0V, self-refresh Samsung Electronic
7339 KM416C1004CJL-5 1M x 16Bit CMOS dynamic RAM with extended data out, 50ns, VCC=5.0V, self-refresh Samsung Electronic
7340 KM416C1004CJL-6 1M x 16Bit CMOS dynamic RAM with extended data out, 60ns, VCC=5.0V, self-refresh Samsung Electronic
7341 KM416C1004CTL-45 1M x 16Bit CMOS dynamic RAM with extended data out, 45ns, VCC=5.0V, self-refresh Samsung Electronic
7342 KM416C1004CTL-5 1M x 16Bit CMOS dynamic RAM with extended data out, 50ns, VCC=5.0V, self-refresh Samsung Electronic
7343 KM416C1004CTL-6 1M x 16Bit CMOS dynamic RAM with extended data out, 60ns, VCC=5.0V, self-refresh Samsung Electronic
7344 KM416C1204CJ-45 1M x 16Bit CMOS dynamic RAM with extended data out, 45ns, VCC=5.0V, refresh period=16ms Samsung Electronic
7345 KM416C1204CJ-50 1M x 16Bit CMOS dynamic RAM with extended data out, 50ns, VCC=5.0V, refresh period=16ms Samsung Electronic
7346 KM416C1204CJ-60 1M x 16Bit CMOS dynamic RAM with extended data out, 60ns, VCC=5.0V, refresh period=16ms Samsung Electronic
7347 KM416C1204CJL-45 1M x 16Bit CMOS dynamic RAM with extended data out, 45ns, VCC=5.0V, self-refresh Samsung Electronic
7348 KM416C1204CJL-50 1M x 16Bit CMOS dynamic RAM with extended data out, 50ns, VCC=5.0V, self-refresh Samsung Electronic
7349 KM416C1204CJL-60 1M x 16Bit CMOS dynamic RAM with extended data out, 60ns, VCC=5.0V, self-refresh Samsung Electronic
7350 KM416C1204CT-50 1M x 16Bit CMOS dynamic RAM with extended data out, 50ns, VCC=5.0V, refresh period=16ms Samsung Electronic


Datasheets found :: 15689
Page: | 241 | 242 | 243 | 244 | 245 | 246 | 247 | 248 | 249 |



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