No. |
Part Name |
Description |
Manufacturer |
7321 |
KBU8005-G |
Bridge Rectifiers, VRRM=50V, VDC=50V, I(AV)=8A |
Comchip Technology |
7322 |
KBU801-G |
Bridge Rectifiers, VRRM=100V, VDC=100V, I(AV)=8A |
Comchip Technology |
7323 |
KBU801-G |
Bridge Rectifiers, VRRM=100V, VDC=100V, I(AV)=8A |
Comchip Technology |
7324 |
KBU802-G |
Bridge Rectifiers, VRRM=100V, VDC=100V, I(AV)=8A |
Comchip Technology |
7325 |
KBU802-G |
Bridge Rectifiers, VRRM=100V, VDC=100V, I(AV)=8A |
Comchip Technology |
7326 |
KBU804-G |
Bridge Rectifiers, VRRM=400V, VDC=400V, I(AV)=8A |
Comchip Technology |
7327 |
KBU804-G |
Bridge Rectifiers, VRRM=400V, VDC=400V, I(AV)=8A |
Comchip Technology |
7328 |
KBU806-G |
Bridge Rectifiers, VRRM=600V, VDC=600V, I(AV)=8A |
Comchip Technology |
7329 |
KBU806-G |
Bridge Rectifiers, VRRM=600V, VDC=600V, I(AV)=8A |
Comchip Technology |
7330 |
KBU808-G |
Bridge Rectifiers, VRRM=800V, VDC=800V, I(AV)=8A |
Comchip Technology |
7331 |
KBU808-G |
Bridge Rectifiers, VRRM=800V, VDC=800V, I(AV)=8A |
Comchip Technology |
7332 |
KBU810-G |
Bridge Rectifiers, VRRM=1000V, VDC=1000V, I(AV)=8A |
Comchip Technology |
7333 |
KBU810-G |
Bridge Rectifiers, VRRM=1000V, VDC=1000V, I(AV)=8A |
Comchip Technology |
7334 |
KF12N60F |
��VDSS=600V, ID=12A |
Korea Electronics (KEC) |
7335 |
KM416C1004CJ-45 |
1M x 16Bit CMOS dynamic RAM with extended data out, 45ns, VCC=5.0V, refresh period=64ms |
Samsung Electronic |
7336 |
KM416C1004CJ-5 |
1M x 16Bit CMOS dynamic RAM with extended data out, 50ns, VCC=5.0V, refresh period=64ms |
Samsung Electronic |
7337 |
KM416C1004CJ-6 |
1M x 16Bit CMOS dynamic RAM with extended data out, 60ns, VCC=5.0V, refresh period=64ms |
Samsung Electronic |
7338 |
KM416C1004CJL-45 |
1M x 16Bit CMOS dynamic RAM with extended data out, 45ns, VCC=5.0V, self-refresh |
Samsung Electronic |
7339 |
KM416C1004CJL-5 |
1M x 16Bit CMOS dynamic RAM with extended data out, 50ns, VCC=5.0V, self-refresh |
Samsung Electronic |
7340 |
KM416C1004CJL-6 |
1M x 16Bit CMOS dynamic RAM with extended data out, 60ns, VCC=5.0V, self-refresh |
Samsung Electronic |
7341 |
KM416C1004CTL-45 |
1M x 16Bit CMOS dynamic RAM with extended data out, 45ns, VCC=5.0V, self-refresh |
Samsung Electronic |
7342 |
KM416C1004CTL-5 |
1M x 16Bit CMOS dynamic RAM with extended data out, 50ns, VCC=5.0V, self-refresh |
Samsung Electronic |
7343 |
KM416C1004CTL-6 |
1M x 16Bit CMOS dynamic RAM with extended data out, 60ns, VCC=5.0V, self-refresh |
Samsung Electronic |
7344 |
KM416C1204CJ-45 |
1M x 16Bit CMOS dynamic RAM with extended data out, 45ns, VCC=5.0V, refresh period=16ms |
Samsung Electronic |
7345 |
KM416C1204CJ-50 |
1M x 16Bit CMOS dynamic RAM with extended data out, 50ns, VCC=5.0V, refresh period=16ms |
Samsung Electronic |
7346 |
KM416C1204CJ-60 |
1M x 16Bit CMOS dynamic RAM with extended data out, 60ns, VCC=5.0V, refresh period=16ms |
Samsung Electronic |
7347 |
KM416C1204CJL-45 |
1M x 16Bit CMOS dynamic RAM with extended data out, 45ns, VCC=5.0V, self-refresh |
Samsung Electronic |
7348 |
KM416C1204CJL-50 |
1M x 16Bit CMOS dynamic RAM with extended data out, 50ns, VCC=5.0V, self-refresh |
Samsung Electronic |
7349 |
KM416C1204CJL-60 |
1M x 16Bit CMOS dynamic RAM with extended data out, 60ns, VCC=5.0V, self-refresh |
Samsung Electronic |
7350 |
KM416C1204CT-50 |
1M x 16Bit CMOS dynamic RAM with extended data out, 50ns, VCC=5.0V, refresh period=16ms |
Samsung Electronic |
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