| No. |
Part Name |
Description |
Manufacturer |
| 7321 |
BC558B |
30 V, PNP silicon planar epitaxial transistor |
Boca Semiconductor Corporation |
| 7322 |
BC558C |
30 V, PNP silicon planar epitaxial transistor |
Boca Semiconductor Corporation |
| 7323 |
BC846A |
GENERAL PURPOSE TRANSISITOR NPN SILICON |
Zowie Technology Corporation |
| 7324 |
BC846B |
GENERAL PURPOSE TRANSISITOR NPN SILICON |
Zowie Technology Corporation |
| 7325 |
BC847A |
GENERAL PURPOSE TRANSISITOR NPN SILICON |
Zowie Technology Corporation |
| 7326 |
BC847B |
GENERAL PURPOSE TRANSISITOR NPN SILICON |
Zowie Technology Corporation |
| 7327 |
BC847C |
GENERAL PURPOSE TRANSISITOR NPN SILICON |
Zowie Technology Corporation |
| 7328 |
BC848A |
GENERAL PURPOSE TRANSISITOR NPN SILICON |
Zowie Technology Corporation |
| 7329 |
BC848B |
GENERAL PURPOSE TRANSISITOR NPN SILICON |
Zowie Technology Corporation |
| 7330 |
BC848C |
GENERAL PURPOSE TRANSISITOR NPN SILICON |
Zowie Technology Corporation |
| 7331 |
BC849B |
GENERAL PURPOSE TRANSISITOR NPN SILICON |
Zowie Technology Corporation |
| 7332 |
BC849C |
GENERAL PURPOSE TRANSISITOR NPN SILICON |
Zowie Technology Corporation |
| 7333 |
BCR08AM-14 |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
Mitsubishi Electric Corporation |
| 7334 |
BCR08AM-14 |
MITSUBISHI SEMICONDUCTOR (TRIAC) LOW POWER USE PLANAR PASSIVATION TYPE |
Mitsubishi Electric Corporation |
| 7335 |
BCR08AS-8 |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
Mitsubishi Electric Corporation |
| 7336 |
BCR08AS-8 |
MITSUBISHI SEMICONDUCTOR (TRIAC) LOW POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE |
Mitsubishi Electric Corporation |
| 7337 |
BCR10CM |
MITSUBISHI SEMICONDUCTOR (TRIAC) MEDIUM POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE |
Mitsubishi Electric Corporation |
| 7338 |
BCR10CM-12 |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
Mitsubishi Electric Corporation |
| 7339 |
BCR10CM-8 |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
Mitsubishi Electric Corporation |
| 7340 |
BCR10CS |
MITSUBISHI SEMICONDUCTOR (TRIAC) MEDIUM POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE |
Mitsubishi Electric Corporation |
| 7341 |
BCR10CS |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
Mitsubishi Electric Corporation |
| 7342 |
BCR10PM |
MITSUBISHI SEMICONDUCTOR (TRIAC) MEDIUM POWER USE INSULATED TYPE, PLANAR PASSIVATION TYPE |
Mitsubishi Electric Corporation |
| 7343 |
BCR10PM |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
Mitsubishi Electric Corporation |
| 7344 |
BCR10UM |
MITSUBISHI SEMICONDUCTOR (TRIAC) MEDIUM POWER USE INSULATED TYPE, GLASS PASSIVATION TYPE |
Mitsubishi Electric Corporation |
| 7345 |
BCR12 |
MEDIUM POWER USE NON-INSULATED TYPE/ PLANAR PASSIVATION TYPE |
Mitsubishi Electric Corporation |
| 7346 |
BCR12CM |
MITSUBISHI SEMICONDUCTOR (TRIAC) MEDIUM POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE |
Mitsubishi Electric Corporation |
| 7347 |
BCR12CM-12 |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
Mitsubishi Electric Corporation |
| 7348 |
BCR12CM-8 |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
Mitsubishi Electric Corporation |
| 7349 |
BCR12CS |
MITSUBISHI SEMICONDUCTOR (TRIAC) MEDIUM POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE |
Mitsubishi Electric Corporation |
| 7350 |
BCR12CS-12 |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
Mitsubishi Electric Corporation |
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