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Datasheets for CORPORAT

Datasheets found :: 127165
Page: | 244 | 245 | 246 | 247 | 248 | 249 | 250 | 251 | 252 |
No. Part Name Description Manufacturer
7411 BCR5AM-12 Integrated Gate Bipolar Transistor (IGBT) Modules: 250V Mitsubishi Electric Corporation
7412 BCR5AM-8 Integrated Gate Bipolar Transistor (IGBT) Modules: 250V Mitsubishi Electric Corporation
7413 BCR5AS MITSUBISHI SEMICONDUCTOR (TRIAC) MEDIUM POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE Mitsubishi Electric Corporation
7414 BCR5AS-12 Integrated Gate Bipolar Transistor (IGBT) Modules: 250V Mitsubishi Electric Corporation
7415 BCR5AS-8 Integrated Gate Bipolar Transistor (IGBT) Modules: 250V Mitsubishi Electric Corporation
7416 BCR5KM MITSUBISHI SEMICONDUCTOR (TRIAC) MEDIUM POWER USE INSULATED TYPE, PLANAR PASSIVATION TYPE Mitsubishi Electric Corporation
7417 BCR5KM Integrated Gate Bipolar Transistor (IGBT) Modules: 250V Mitsubishi Electric Corporation
7418 BCR5PM MITSUBISHI SEMICONDUCTOR (TRIAC) LOW POWER USE INSULATED TYPE, PLANAR PASSIVATION TYPE Mitsubishi Electric Corporation
7419 BCR5PM-12 Integrated Gate Bipolar Transistor (IGBT) Modules: 250V Mitsubishi Electric Corporation
7420 BCR5PM-14 Integrated Gate Bipolar Transistor (IGBT) Modules: 250V Mitsubishi Electric Corporation
7421 BCR5PM-8 Integrated Gate Bipolar Transistor (IGBT) Modules: 250V Mitsubishi Electric Corporation
7422 BCR6 MEDIUM POWER USE NON-INSULATED TYPE/ PLANAR PASSIVATION TYPE Mitsubishi Electric Corporation
7423 BCR6AM MITSUBISHI SEMICONDUCTOR (TRIAC) MEDIUM POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE Mitsubishi Electric Corporation
7424 BCR6AM-12 Integrated Gate Bipolar Transistor (IGBT) Modules: 250V Mitsubishi Electric Corporation
7425 BCR6AM-8 Integrated Gate Bipolar Transistor (IGBT) Modules: 250V Mitsubishi Electric Corporation
7426 BCR8 MEDIUM POWER USE NON-INSULATED TYPE/ PLANAR PASSIVATION TYPE Mitsubishi Electric Corporation
7427 BCR8CM MITSUBISHI SEMICONDUCTOR (TRIAC) MEDIUM POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE Mitsubishi Electric Corporation
7428 BCR8CM-12 Integrated Gate Bipolar Transistor (IGBT) Modules: 250V Mitsubishi Electric Corporation
7429 BCR8CM-8 Integrated Gate Bipolar Transistor (IGBT) Modules: 250V Mitsubishi Electric Corporation
7430 BCR8CS MITSUBISHI SEMICONDUCTOR (TRIAC) MEDIUM POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE Mitsubishi Electric Corporation
7431 BCR8CS-12 Integrated Gate Bipolar Transistor (IGBT) Modules: 250V Mitsubishi Electric Corporation
7432 BCR8CS-8 Integrated Gate Bipolar Transistor (IGBT) Modules: 250V Mitsubishi Electric Corporation
7433 BCR8PM MITSUBISHI SEMICONDUCTOR (TRIAC) MEDIUM POWER USE INSULATED TYPE, PLANAR PASSIVATION TYPE Mitsubishi Electric Corporation
7434 BCR8PM-12 Integrated Gate Bipolar Transistor (IGBT) Modules: 250V Mitsubishi Electric Corporation
7435 BCR8PM-14 Integrated Gate Bipolar Transistor (IGBT) Modules: 250V Mitsubishi Electric Corporation
7436 BCR8PM-14 MITSUBISHI SEMICONDUCTOR (TRIAC) MEDIUM POWER USE INSULATED TYPE, PLANAR PASSIVATION TYPE Mitsubishi Electric Corporation
7437 BCR8PM-16 Integrated Gate Bipolar Transistor (IGBT) Modules: 250V Mitsubishi Electric Corporation
7438 BCR8PM-18 MITSUBISHI SEMICONDUCTOR (TRIAC) MEDIUM POWER USE INSULATED TYPE, PLANAR PASSIVATION TYPE Mitsubishi Electric Corporation
7439 BCR8PM-20 Integrated Gate Bipolar Transistor (IGBT) Modules: 250V Mitsubishi Electric Corporation
7440 BCR8PM-20 MITSUBISHI SEMICONDUCTOR (TRIAC) MEDIUM POWER USE INSULATED TYPE, PLANAR PASSIVATION TYPE Mitsubishi Electric Corporation


Datasheets found :: 127165
Page: | 244 | 245 | 246 | 247 | 248 | 249 | 250 | 251 | 252 |



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