| No. |
Part Name |
Description |
Manufacturer |
| 7411 |
BSY83 |
NPN silicon epitaxy planar transistor for amplifier and switch applications with higher collector current |
ITT Semiconductors |
| 7412 |
BSY84 |
NPN silicon epitaxy planar transistor for amplifier and switch applications with higher collector current |
ITT Semiconductors |
| 7413 |
BSY85 |
NPN silicon epitaxy planar transistor for amplifier and switch applications with higher collector current |
ITT Semiconductors |
| 7414 |
BSY86 |
NPN silicon epitaxy planar transistor for amplifier and switch applications with higher collector current |
ITT Semiconductors |
| 7415 |
BSY87 |
NPN silicon epitaxy planar transistor for amplifier and switch applications |
ITT Semiconductors |
| 7416 |
BSY88 |
NPN silicon epitaxy planar transistor for amplifier and switch applications |
ITT Semiconductors |
| 7417 |
BSY88 |
NPN SILICON PLANAR EPITAXIAL TRANSISTOR |
Micro Electronics |
| 7418 |
BSY90 |
NPN silicon epitaxy planar transistor for amplifier and switch applications |
ITT Semiconductors |
| 7419 |
BSY93 |
Silicon NPN epitaxial planar transistor with medium reverse voltage for switching and RF applications |
AEG-TELEFUNKEN |
| 7420 |
BU125S |
Silicon epitaxial planar NPN high voltage transistor |
SGS-ATES |
| 7421 |
BU126 |
NPN silicon multiepitaxial transistor |
Mikroelektronikai Vallalat |
| 7422 |
BU126A |
NPN silicon multiepitaxial transistor |
Mikroelektronikai Vallalat |
| 7423 |
BU326A |
NPN silicon, multiepitaxial transistor |
Mikroelektronikai Vallalat |
| 7424 |
BU326S |
NPN silicon, multiepitaxial transistor |
Mikroelektronikai Vallalat |
| 7425 |
BU326S |
Silicon multiepitaxial biplanar® NPN high voltage power transistor intended for switch-mode CTV applications |
SGS-ATES |
| 7426 |
BU406 |
NPN Epitaxial Silicon Transistor |
Fairchild Semiconductor |
| 7427 |
BU406 |
400 V, 7 A, NPN epitaxial silicon transistor |
Samsung Electronic |
| 7428 |
BU406 |
Silicon epitaxial planar NPN transistor, fast switchingm high voltage for use in TV horizontal deflection |
SGS-ATES |
| 7429 |
BU406 |
NPN EPITAXIAL SILICON TRANSISTOR(HIGH VOLTAGE SWITCHING USE IN HORIZONTAL DEFLECTION OUTPUT STAGE) |
Wing Shing Computer Components |
| 7430 |
BU406D |
Silicon planar epitaxial NPN transistor with integrated damper diode for use in horizontal TV deflectors |
SGS-ATES |
| 7431 |
BU406D |
NPN EPITAXIAL SILICON TRANSISTOR(HIGH VOLTAGE SWITCHING USE IN HORIZONTAL DEFLECTION OUTPUT STAGE) |
Wing Shing Computer Components |
| 7432 |
BU406H |
NPN Epitaxial Silicon Transistor |
Fairchild Semiconductor |
| 7433 |
BU406H |
400 V, 7 A, NPN epitaxial silicon transistor |
Samsung Electronic |
| 7434 |
BU406H |
Silicon epitaxial planar NPN transistor, fast switchingm high voltage for use in TV horizontal deflection |
SGS-ATES |
| 7435 |
BU406H |
NPN epitaxial silicon transistor. High voltage switching for horizontal deflection output stage. Collector-base voltage 400V. Collector-emitter voltage 200V. Emitter-base voltage 6V. |
Wing Shing Computer Components |
| 7436 |
BU406TU |
NPN Epitaxial Silicon Transistor |
Fairchild Semiconductor |
| 7437 |
BU407 |
NPN Epitaxial Silicon Transistor |
Fairchild Semiconductor |
| 7438 |
BU407 |
NPN EPITAXIAL SILICON TRANSISTOR |
Samsung Electronic |
| 7439 |
BU407 |
Silicon epitaxial planar NPN transistor for use in horizontal TV deflectors |
SGS-ATES |
| 7440 |
BU407 |
SILICON EPITAXIAL PLANNAR TRANSISTOR(GENERAL DESCRIPTION) |
Wing Shing Computer Components |
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