| No. |
Part Name |
Description |
Manufacturer |
| 7441 |
SUR541EF |
NPN Epitaxial Planar Silicon Transistor |
AUK Corp |
| 7442 |
TA7303 |
Silicon NPN Epitaxial Planar RF Transistor |
RCA Solid State |
| 7443 |
TA7319 |
Silicon NPN Epitaxial Planar RF Transistor for UHF Applications in Military Communications and Industrial Equipment |
RCA Solid State |
| 7444 |
TBC337 |
Silicon NPN Epitaxial Transistor (PCT Process) |
TOSHIBA |
| 7445 |
TBC338 |
Silicon NPN Epitaxial Transistor (PCT Process) |
TOSHIBA |
| 7446 |
TBC546 |
Silicon NPN Epitaxial Transistor (PCT Process) |
TOSHIBA |
| 7447 |
TBC547 |
Silicon NPN Epitaxial Transistor (PCT Process) |
TOSHIBA |
| 7448 |
TBC548 |
Silicon NPN Epitaxial Transistor (PCT Process) |
TOSHIBA |
| 7449 |
TBC549 |
Silicon NPN Epitaxial Transistor (PCT Process) |
TOSHIBA |
| 7450 |
TBC550 |
Silicon NPN Epitaxial Transistor (PCT Process) |
TOSHIBA |
| 7451 |
TC1426 |
The TC1426/27/28 are a family of 1.2A dual high- speed drivers. CMOS fabrication is used for low power consumption and high efficiency. These devices are fabricated using an epitaxial layer to effectively short out the intrinsic parasitic |
Microchip |
| 7452 |
TC1427 |
The TC1426/27/28 are a family of 1.2A dual high- speed drivers. CMOS fabrication is used for low power consumption and high efficiency. These devices are fabricated using an epitaxial layer to effectively short out the intrinsic parasitic |
Microchip |
| 7453 |
TC1428 |
The TC1426/27/28 are a family of 1.2A dual high- speed drivers. CMOS fabrication is used for low power consumption and high efficiency. These devices are fabricated using an epitaxial layer to effectively short out the intrinsic parasitic |
Microchip |
| 7454 |
TEC8013 |
Silicon NPN Epitaxial Transistor (PCT Process) |
TOSHIBA |
| 7455 |
TEC9011 |
Silicon NPN Epitaxial Transistor (PCT Process) |
TOSHIBA |
| 7456 |
TEC9013 |
Silicon NPN Epitaxial Transistor (PCT Process) |
TOSHIBA |
| 7457 |
TEC9014 |
Silicon NPN Epitaxial Transistor (PCT Process) |
TOSHIBA |
| 7458 |
TEC9016 |
Silicon NPN Epitaxial Transistor (PCT Process) |
TOSHIBA |
| 7459 |
TED1402 |
Silicon NPN Epitaxial Transistor (PCT Process) |
TOSHIBA |
| 7460 |
TED1502 |
Silicon NPN Epitaxial Transistor (PCT Process) |
TOSHIBA |
| 7461 |
TED1702 |
Silicon NPN Epitaxial Transistor (PCT Process) |
TOSHIBA |
| 7462 |
TID21A |
8-way silicon epitaxial planar diode array |
Texas Instruments |
| 7463 |
TID22A |
8-way silicon epitaxial planar diode array |
Texas Instruments |
| 7464 |
TID23A |
8-way silicon epitaxial planar diode array |
Texas Instruments |
| 7465 |
TID24A |
8-way silicon epitaxial planar diode array |
Texas Instruments |
| 7466 |
TID25A |
16-way silicon epitaxial planar diode array |
Texas Instruments |
| 7467 |
TID26A |
16-way silicon epitaxial planar diode array |
Texas Instruments |
| 7468 |
TID29A |
10x dual silicon epitaxial planar diode group, the connecting wires are gold-plated and made of an iron-nickel-cobalt alloy |
Texas Instruments |
| 7469 |
TID30A |
10x dual silicon epitaxial planar diode group, the connecting wires are gold-plated and made of an iron-nickel-cobalt alloy |
Texas Instruments |
| 7470 |
TIP100 |
NPN Epitaxial Silicon Darlington Transistor |
Fairchild Semiconductor |
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