| No. |
Part Name |
Description |
Manufacturer |
| 7501 |
1N5386 |
5 Watt surmetic silicon Zener Diode (silicon oxide passivated) |
Motorola |
| 7502 |
1N5386 |
Diode Zener Single 180V 20% 5W 2-Pin Case T-18 |
New Jersey Semiconductor |
| 7503 |
1N5386 |
GLASS PASSIVATED JUNCTION SILICON ZENER DIODE(VOLTAGE- 11 to 200 Volts Power - 5.0 Watts) |
Panjit International Inc |
| 7504 |
1N5386 |
GLASS PASSIVATED JUNCTION SILICON ZENER DIODE |
TRSYS |
| 7505 |
1N5386A |
5 Watt surmetic silicon Zener Diode (silicon oxide passivated) |
Motorola |
| 7506 |
1N5386A |
Diode Zener Single 180V 10% 5W 2-Pin Case T-18 |
New Jersey Semiconductor |
| 7507 |
1N5386B |
5 Watt Surmetic 40 Silicon Zener Diodes |
Boca Semiconductor Corporation |
| 7508 |
1N5386B |
5 Watt surmetic silicon Zener Diode (silicon oxide passivated) |
Motorola |
| 7509 |
1N5386B |
Diode Zener Single 180V 5% 5W 2-Pin DO-201AE |
New Jersey Semiconductor |
| 7510 |
1N5386B |
GLASS PASSIVATED JUNCTION SILICON ZENER DIODE(VOLTAGE- 11 to 200 Volts Power - 5.0 Watts) |
Panjit International Inc |
| 7511 |
1N5386B |
5W SILICON ZENER DIODES |
ST Microelectronics |
| 7512 |
1N5386B |
180 V, 5 W, glass passivated junction silicon zener diode |
TRANSYS Electronics Limited |
| 7513 |
1N5386B |
GLASS PASSIVATED JUNCTION SILICON ZENER DIODE |
TRSYS |
| 7514 |
1N5386C |
Diode Zener Single 180V 2% 5W 2-Pin Case T-18 |
New Jersey Semiconductor |
| 7515 |
1N5386D |
Diode Zener Single 180V 1% 5W 2-Pin Case T-18 |
New Jersey Semiconductor |
| 7516 |
1N5387 |
5 Watt surmetic silicon Zener Diode (silicon oxide passivated) |
Motorola |
| 7517 |
1N5387 |
Diode Zener Single 190V 20% 5W 2-Pin Case T-18 |
New Jersey Semiconductor |
| 7518 |
1N5387A |
5 Watt surmetic silicon Zener Diode (silicon oxide passivated) |
Motorola |
| 7519 |
1N5387A |
Diode Zener Single 190V 10% 5W 2-Pin Case T-18 |
New Jersey Semiconductor |
| 7520 |
1N5387B |
5 Watt Surmetic 40 Silicon Zener Diodes |
Boca Semiconductor Corporation |
| 7521 |
1N5387B |
5 Watt surmetic silicon Zener Diode (silicon oxide passivated) |
Motorola |
| 7522 |
1N5387B |
Diode Zener Single 190V 5% 5W 2-Pin DO-201AE |
New Jersey Semiconductor |
| 7523 |
1N5387B |
GLASS PASSIVATED JUNCTION SILICON ZENER DIODE(VOLTAGE- 11 to 200 Volts Power - 5.0 Watts) |
Panjit International Inc |
| 7524 |
1N5387B |
5W SILICON ZENER DIODES |
ST Microelectronics |
| 7525 |
1N5387B |
190 V, 5 W, glass passivated junction silicon zener diode |
TRANSYS Electronics Limited |
| 7526 |
1N5387B |
GLASS PASSIVATED JUNCTION SILICON ZENER DIODE |
TRSYS |
| 7527 |
1N5387C |
Diode Zener Single 190V 2% 5W 2-Pin Case T-18 |
New Jersey Semiconductor |
| 7528 |
1N5387D |
Diode Zener Single 190V 1% 5W 2-Pin Case T-18 |
New Jersey Semiconductor |
| 7529 |
1N5388 |
5 Watt surmetic silicon Zener Diode (silicon oxide passivated) |
Motorola |
| 7530 |
1N5388 |
Diode Zener Single 200V 20% 5W 2-Pin Case T-18 |
New Jersey Semiconductor |
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