| No. |
Part Name |
Description |
Manufacturer |
| 7501 |
TC55465AP-25 |
25ns; 120mA; V(cc): -0.1 to +7V; V(in/out); -2.0 to +7.0V; 1W; silicon gate CMOS 65.536 words x 4 Bits CMOS static RAM |
TOSHIBA |
| 7502 |
TC55465AP-35 |
35ns; 120mA; V(cc): -0.1 to +7V; V(in/out); -2.0 to +7.0V; 1W; silicon gate CMOS 65.536 words x 4 Bits CMOS static RAM |
TOSHIBA |
| 7503 |
TC5565AFL-10 |
65,536 bit static random access memory organized as 8,192 words by 8 bits using CMOS technology |
TOSHIBA |
| 7504 |
TC5565AFL-10 |
65,536 bit static random access memory organized as 8,192 words by 8 bits using CMOS technology |
TOSHIBA |
| 7505 |
TC5565AFL-12 |
65,536 bit static random access memory organized as 8,192 words by 8 bits using CMOS technology |
TOSHIBA |
| 7506 |
TC5565AFL-15 |
65,536 bit static random access memory organized as 8,192 words by 8 bits using CMOS technology |
TOSHIBA |
| 7507 |
TC5565APL |
65,536 bit static random access memory organized as 8,192 words by 8 bits using CMOS technology |
TOSHIBA |
| 7508 |
TC5565APL-10 |
65,536 bit static random access memory organized as 8,192 words by 8 bits using CMOS technology |
TOSHIBA |
| 7509 |
TC5565APL-12 |
65,536 bit static random access memory organized as 8,192 words by 8 bits using CMOS technology |
TOSHIBA |
| 7510 |
TC5565APL-15 |
65,536 bit static random access memory organized as 8,192 words by 8 bits using CMOS technology |
TOSHIBA |
| 7511 |
TC57512AD-15 |
65,536 WORDS x 8 BITS CMOS UV ERASABLE AND ELECTRICALLY PROGRAMMABLE READ ONLY MEMORY |
etc |
| 7512 |
TC57512AD-15 |
150ns; V(cc): -0.6 to +7V; 1.5W; 65,536 words x 8 bits CMOS UV erasable and electrically programmable read only memory |
TOSHIBA |
| 7513 |
TC57512AD-20 |
65,536 WORDS x 8 BITS CMOS UV ERASABLE AND ELECTRICALLY PROGRAMMABLE READ ONLY MEMORY |
etc |
| 7514 |
TC57512AD-20 |
200ns; V(cc): -0.6 to +7V; 1.5W; 65,536 words x 8 bits CMOS UV erasable and electrically programmable read only memory |
TOSHIBA |
| 7515 |
TC59S6404BFTL-10 |
4,194,304-words x 4BANKS x 4-BITS synchronous dynamic RAM |
TOSHIBA |
| 7516 |
TC59S6404BFTL-80 |
4,194,304-words x 4BANKS x 4-BITS synchronous dynamic RAM |
TOSHIBA |
| 7517 |
TC59S6416BFT-10 |
1,048,576-words x 4BANKS x 16-BITS synchronous dynamic RAM |
TOSHIBA |
| 7518 |
TC59S6416BFTL-10 |
1,048,576-words x 4BANKS x 16-BITS synchronous dynamic RAM |
TOSHIBA |
| 7519 |
TC59S6416BFTL-80 |
1,048,576-words x 4BANKS x 16-BITS synchronous dynamic RAM |
TOSHIBA |
| 7520 |
TC9146AP |
LSI for Static FM/MW/LW 3 Bands Digital Tuning System |
TOSHIBA |
| 7521 |
TC9147BP |
LSI for Static FM/MW/LW 3 Bands Digital Tuning System |
TOSHIBA |
| 7522 |
TCA450 |
HALL ELEMENT with DIFFERENTIAL AMPLIFIER for detecting magnetic fields and controlling motors |
VALVO |
| 7523 |
TCN75 |
The TCN75 is a serially programmable temperature sensor that notifies the host controller when ambient temperature exceeds a user-programmed setpoint. Hysteresis is also programmable. The INT/CMPTR output is programmable as either a simple |
Microchip |
| 7524 |
TDA7316 |
FOUR BANDS DIGITAL CONTROLLED GRAPHIC EQUALIZER |
SGS Thomson Microelectronics |
| 7525 |
TDA7316 |
FOUR BANDS DIGITAL CONTROLLED GRAPHIC EQUALIZER |
SGS Thomson Microelectronics |
| 7526 |
TDA7316 |
FOUR BANDS DIGITAL CONTROLLED GRAPHIC EQUALIZER |
ST Microelectronics |
| 7527 |
TDA7316D |
FOUR BANDS DIGITAL CONTROLLED GRAPHIC EQUALIZER |
SGS Thomson Microelectronics |
| 7528 |
TDA7316D |
FOUR BANDS DIGITAL CONTROLLED GRAPHIC EQUALIZER |
ST Microelectronics |
| 7529 |
TDA7317 |
FIVE BANDS DIGITAL CONTROLLED GRAPHIC EQUALIZER |
SGS Thomson Microelectronics |
| 7530 |
TDA7317 |
FIVE BANDS DIGITAL CONTROLLED GRAPHIC EQUALIZER |
ST Microelectronics |
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