| No. |
Part Name |
Description |
Manufacturer |
| 751 |
MCK100-8 |
600V Vdrm 0.8A Sensitive Gate Silicon Controlled Rectifier, 1.7@1AV Peak On-State Voltage, 500V/μs Rise of Off-State Voltage |
SemiWell Semiconductor |
| 752 |
MCR08BT1 |
SCR 0.8 AMPERE RMS 200 thru 600 Volts |
Motorola |
| 753 |
MCR100-6 |
400V Vdrm 0.8A Sensitive Gate Silicon Controlled Rectifier, 1.7@1AV Peak On-State Voltage, 500V/μs Rise of Off-State Voltage |
SemiWell Semiconductor |
| 754 |
MCR100-8 |
600V Vdrm 0.8A Sensitive Gate Silicon Controlled Rectifier, 1.7@1AV Peak On-State Voltage, 500V/μs Rise of Off-State Voltage |
SemiWell Semiconductor |
| 755 |
MCR101 |
Plastic Silicon Controlled Rectifier 0.8A RMS, 15V |
Motorola |
| 756 |
MCR104 |
Plastic Silicon Controlled Rectifier 0.8A RMS, 100V |
Motorola |
| 757 |
MCR115 |
Plastic Silicon Controlled Rectifier 0.8 Amperes RMS |
Motorola |
| 758 |
MCR120 |
Plastic Silicon Controlled Rectifier 0.8 Amperes RMS |
Motorola |
| 759 |
MD57-0001 |
Low Cost MMIC Mixer with Local Oscillator Amplifier, 0.8 GHz - 1.0 GHz |
Tyco Electronics |
| 760 |
MD57-0001SMB |
Low Cost MMIC Mixer with Local Oscillator Amplifier, 0.8 GHz - 1.0 GHz |
Tyco Electronics |
| 761 |
MD57-0001TR |
Low Cost MMIC Mixer with Local Oscillator Amplifier, 0.8 GHz - 1.0 GHz |
Tyco Electronics |
| 762 |
MDA44 |
TSOP, 10, 16mm Body WD, EiAJ Type II, 0.8mm Pitch 44LD |
National Semiconductor |
| 763 |
MDB44 |
TSOP, 10, 16mm Body WD, EiAJ Type II, 0.8mm Pitch 44 LD, Reverse Form |
National Semiconductor |
| 764 |
MGA-85563 |
MGA-85563 · 3V LNA, +12 to +17dBm Adjustable OIP3, 0.8-6GHz, SOT363(SC-70) |
Agilent (Hewlett-Packard) |
| 765 |
MPS6530 |
0.625W General Purpose NPN Plastic Leaded Transistor. 40V Vceo, 0.800A Ic, 25 - hFE |
Continental Device India Limited |
| 766 |
MR25000 |
Diode Switching 25KV 0.8A 3-Pin |
New Jersey Semiconductor |
| 767 |
MRW53601 |
Microwave Linear Power Transistor 0.8W |
Motorola |
| 768 |
MTM8N35 |
N-CHANNEL TMOS POWER FET 8A 350V 0.8 ohms |
Motorola |
| 769 |
MTM8N40 |
N-CHANNEL TMOS POWER FET 8A 400V 0.8 ohms |
Motorola |
| 770 |
MTP8N50E |
TMOS POWER FET 8.0 AMPERES 500 VOLTS RDS(on) = 0.8 OHM |
Motorola |
| 771 |
MTY14N100 |
TMOS POWER FET 14 AMPERES 1000 VOLTS RDS(on) = 0.80 OHM |
Motorola |
| 772 |
MTY14N100E |
TMOS POWER FET 14 AMPERES 1000 VOLTS RDS(on) = 0.80 OHM |
Motorola |
| 773 |
MW4IC001MR4 |
W–CDMA 0.8–2.17 GHz, 900 mW, 28 V RF LDMOS Wideband Integrated Power Amplifier |
Freescale (Motorola) |
| 774 |
MW4IC001MR4 |
MW4IC001MR4 W-CDMA 0.8-2.17 GHz, 900 mW, 28 V RF LDMOS Wideband Integrated Power Amplifier |
Motorola |
| 775 |
MX636JQ |
True RMS-to-DC converter. 1MHz bandwidth for Vrms > 100mV. Auxiliary dB output: 50dB range. Low power: 0.8mA(typ). |
MAXIM - Dallas Semiconductor |
| 776 |
MX636KQ |
True RMS-to-DC converter. 1MHz bandwidth for Vrms > 100mV. Auxiliary dB output: 50dB range. Low power: 0.8mA(typ). |
MAXIM - Dallas Semiconductor |
| 777 |
NCP6914 |
Mini-PMIC, 1 x 0.8 A DC-DC and 4 x 300 mA LDOs, I2C |
ON Semiconductor |
| 778 |
NDF08N50Z |
Power MOSFET 500V 0.850 Ohm Single N-Channel |
ON Semiconductor |
| 779 |
NTE5400 |
Silicon Controlled Rectifier (SCR) 0.8 Amp Sensitive Gate |
NTE Electronics |
| 780 |
NTE5401 |
Silicon Controlled Rectifier (SCR) 0.8 Amp Sensitive Gate |
NTE Electronics |
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