| No. |
Part Name |
Description |
Manufacturer |
| 751 |
2SC2869 |
NPN SILICON HIGH FREQUENCY TRANSISTOR |
NEC |
| 752 |
2SC2877 |
Silicon NPN epitaxial planar audio frequency power transistor |
TOSHIBA |
| 753 |
2SC2951 |
The ASI 2SC2951 is a High Frequency Transistor Designed for General Purpose Oscillator Applications up to 10 GHz. |
Advanced Semiconductor |
| 754 |
2SC2952 |
The 2SC2592 is a High Frequency Transistor Designed for General Purpose VHF-UHF Amplifier Applications. |
Advanced Semiconductor |
| 755 |
2SC2954-T1 |
For amplify high frequency, low noise, and wide band. |
NEC |
| 756 |
2SC2954-T2 |
For amplify high frequency, low noise, and wide band. |
NEC |
| 757 |
2SC2995 |
Transistor Silicon NPN Epitaxial Type (PCT process) FM/AM RF, MIX, OSC, IF High Frequency Amplifier Applications |
TOSHIBA |
| 758 |
2SC2996 |
Transistor Silicon NPN Epitaxial Type (PCT process) FM/AM RF, MIX, Local, IF High Frequency Amplifier Applications |
TOSHIBA |
| 759 |
2SC3052 |
LOW FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE |
Isahaya Electronics Corporation |
| 760 |
2SC3265 |
Transistor Silicon NPN Epitaxial Type (PCT process) Low Frequency Power Amplifier Applications Power Switching Applications |
TOSHIBA |
| 761 |
2SC3295 |
Transistor Silicon NPN Epitaxial Type (PCT process) Audio Frequency Amplifier Applications Switching Applications |
TOSHIBA |
| 762 |
2SC3324 |
Transistor Silicon NPN Epitaxial Type (PCT process) Audio Frequency Low Noise Amplifier Applications |
TOSHIBA |
| 763 |
2SC3325 |
Transistor Silicon NPN Epitaxial Type (PCT process) Audio Frequency Low Power Amplifier Applications Driver Stage Amplifier Applications Switching Applications |
TOSHIBA |
| 764 |
2SC3351-L |
For amplify low noise and high frequency. |
NEC |
| 765 |
2SC3351-T1B |
For amplify low noise and high frequency. |
NEC |
| 766 |
2SC3351-T2B |
For amplify low noise and high frequency. |
NEC |
| 767 |
2SC3355 |
HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR |
NEC |
| 768 |
2SC3355-T |
For amplify low noise and high frequency |
NEC |
| 769 |
2SC3356-L |
For amplify low noise and high frequency |
NEC |
| 770 |
2SC3356-T1B |
For amplify low noise and high frequency |
NEC |
| 771 |
2SC3356-T2B |
For amplify low noise and high frequency |
NEC |
| 772 |
2SC3356-VM |
For amplify low noise and high frequency |
NEC |
| 773 |
2SC3357-T1 |
For amplify high frequency and low noise. |
NEC |
| 774 |
2SC3357-T2 |
For amplify high frequency and low noise. |
NEC |
| 775 |
2SC3421 |
TRANSISTOR SILICON NPN EPITAXIAL TYPE (PCT PROCESS) AUDIO FREQUENCY POWER AMPLIFIER APPLICATIONS |
TOSHIBA |
| 776 |
2SC3422 |
TRANSISTOR SILICON NPN EPITAXIAL TYPE (PCT PROCESS) AUDIO FREQUENCY POWER AMPLIFIER LOW SPEED SWITCHING |
TOSHIBA |
| 777 |
2SC3423 |
TRANSISTOR SILICON NPN EPITAXIAL TYPE (PCT PROCESS) AUDIO FREQUENCY AMPLIFIER APPLICATIONS |
TOSHIBA |
| 778 |
2SC3444 |
FOR LOW FREQUENCY POWER AMPLFY APPLICATION SILICON NPN EPITAXIAL TYPE |
Isahaya Electronics Corporation |
| 779 |
2SC3624 |
AUDIO FREQUENCY AMPLIFIER, SWITCHING NPN SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD |
NEC |
| 780 |
2SC3624A |
AUDIO FREQUENCY AMPLIFIER, SWITCHING NPN SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD |
NEC |
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