| No. |
Part Name |
Description |
Manufacturer |
| 751 |
MW4IC915 |
MW4IC915MBR1, MW4IC915GMBR1 GSM/GSM EDGE, N-CDMA, W-CDMA, 860-960 MHz, 15 W, 26 V RF LDMOS Wideband Integrated Power Amplifiers |
Motorola |
| 752 |
MW4IC915GMBR1 |
GSM/GSM EDGE, N–CDMA, W–CDMA 860–960 MHz, 15 W, 26 V RF LDMOS Wideband Integrated Amplifier |
Freescale (Motorola) |
| 753 |
MW4IC915MBR1 |
GSM/GSM EDGE, N–CDMA, W–CDMA 860–960 MHz, 15 W, 26 V RF LDMOS Wideband Integrated Amplifier |
Freescale (Motorola) |
| 754 |
MWIC930 |
MWIC930R1, MWIC930GR1 N-CDMA, W-CDMA, GSM/GSM EDGE, 746-960 MHz, 30 W, 26-28 V RF LDMOS Integrated Power Amplifiers |
Motorola |
| 755 |
MWIC930GR1 |
N–CDMA, W–CDMA, GSM/GSM EDGE 746–960 MHz, 30 W, 26–28 V RF LDMOS Integrated Power Amplifier |
Freescale (Motorola) |
| 756 |
MWIC930R1 |
N–CDMA, W–CDMA, GSM/GSM EDGE 746–960 MHz, 30 W, 26–28 V RF LDMOS Integrated Power Amplifier |
Freescale (Motorola) |
| 757 |
NB3N501 |
PLL Clock Multiplier, 13 MHz - 160 MHz, 3.3 V / 5.0 V |
ON Semiconductor |
| 758 |
NDF60N360U1 |
N-Channel Power MOSFET, 600 V, 360 mOhm |
ON Semiconductor |
| 759 |
NE080190 |
Class C, 860 MHz 12 volt power transistor |
NEC |
| 760 |
NE080191 |
Class C, 860 MHz 12 volt power transistor |
NEC |
| 761 |
NE080490 |
Class C, 860 MHz 12 volt power transistor |
NEC |
| 762 |
NE080491 |
Class C, 860 MHz 12 volt power transistor |
NEC |
| 763 |
NE081090 |
Class C, 860 MHz 12 volt power transistor |
NEC |
| 764 |
NE081091 |
Class C, 860 MHz 12 volt power transistor |
NEC |
| 765 |
NE32500N |
C to KA band super low noise amplifier. N-channel HJ FET chip. Idss selection 20 to 60 mA. |
NEC |
| 766 |
NE76100N |
General purpose GaAs MESFET. IDSS 30 to 60 mA. |
NEC |
| 767 |
NSI45015W |
45 V, 15 mA ± 20%, 460 mW package, Constant Current Regulator, SOD-123 |
ON Semiconductor |
| 768 |
NSI45020 |
45 V, 20 mA ± 15%, 460 mW package, Constant Current Regulator, SOD-123 |
ON Semiconductor |
| 769 |
NSI45020A |
45 V, 20 mA ± 10%, 460 mW package, Constant Current Regulator, SOD-123 |
ON Semiconductor |
| 770 |
NSI45025 |
45 V, 25 mA ± 15%, 460 mW package, Constant Current Regulator, SOD-123 |
ON Semiconductor |
| 771 |
NSI45025A |
45 V, 25 mA ± 10%, 460 mW package, Constant Current Regulator, SOD-123 |
ON Semiconductor |
| 772 |
NSI45030 |
45 V 30 mA ± 15%, 460 mW package, Constant Current Regulator, SOD-123 |
ON Semiconductor |
| 773 |
NSI45030A |
45 V 30 mA ± 10%, 460 mW package, Constant Current Regulator, SOD-123 |
ON Semiconductor |
| 774 |
NSI45060DD |
45 V, 60 mA ± 15%, 2.7 W package, Adjustable Constant Current Regulator & LED Driver, DPAK |
ON Semiconductor |
| 775 |
NSI45060JD |
45 V, 60 mA ± 15%, 2.7 W package, Adjustable Constant Current Regulator & LED Driver, DPAK |
ON Semiconductor |
| 776 |
NTA4151P |
Small Signal MOSFET -20 V, -760 mA, Single P-Channel, Gate Zener, SC-75 and SC-89 |
ON Semiconductor |
| 777 |
NX6020CAKS |
60 V / 50 V, 170 mA / 160 mA N/P-channel Trench MOSFET |
Nexperia |
| 778 |
NX7528BF-AA |
1550 nm InGaAsP MQW FP pulsed laser diode for OTDR application (60 mW min). Flat mount flange. |
NEC |
| 779 |
P1707A-08SR |
3.3 V, 60 MHz to 175 MHz, notebook LCD panel EMI reduction IC |
Alliance Semiconductor |
| 780 |
P1707A-08ST |
3.3 V, 60 MHz to 175 MHz, notebook LCD panel EMI reduction IC |
Alliance Semiconductor |
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