| No. |
Part Name |
Description |
Manufacturer |
| 751 |
K3N3C3000D-D(G)C, K3N3C3000D-YC(E) |
4M-Bit (512K x 8) CMOS MASK ROM Data Sheet |
Samsung Electronic |
| 752 |
K3N3C3000D-D(G)C, K3N3C3000D-YC(E) |
4M-Bit (512K x 8) CMOS MASK ROM Data Sheet |
Samsung Electronic |
| 753 |
K3N3C6000D-DC |
4M-Bit (256K x 16) CMOS MASK ROM(EPROM TYPE) Data Sheet |
Samsung Electronic |
| 754 |
K3N3V(U)1000D-D(G)C, K3N3V(U)1000D-TC(E) |
4M-Bit (512K x 8/256K x 16) CMOS MASK ROM Data Sheet |
Samsung Electronic |
| 755 |
K3N3V(U)1000D-D(G)C, K3N3V(U)1000D-TC(E) |
4M-Bit (512K x 8/256K x 16) CMOS MASK ROM Data Sheet |
Samsung Electronic |
| 756 |
K3N3V(U)3000D-D(G)C, K3N3V(U)3000D-YC(E) |
4M-Bit (512K x 8) CMOS MASK ROM Data Sheet |
Samsung Electronic |
| 757 |
K3N3V(U)3000D-D(G)C, K3N3V(U)3000D-YC(E) |
4M-Bit (512K x 8) CMOS MASK ROM Data Sheet |
Samsung Electronic |
| 758 |
K4E16(7)0411(2)D |
4M x 4Bit CMOS Dynamic RAM with Extended Data Out Data Sheet |
Samsung Electronic |
| 759 |
K4E160411D |
4M x 4Bit CMOS Dynamic RAM with Extended Data Out |
Samsung Electronic |
| 760 |
K4E160411D-B |
4M x 4 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 2K refresh cycle. |
Samsung Electronic |
| 761 |
K4E160411D-F |
4M x 4 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 2K refresh cycle. |
Samsung Electronic |
| 762 |
K4E160412D |
4M x 4Bit CMOS Dynamic RAM with Extended Data Out |
Samsung Electronic |
| 763 |
K4E160412D-B |
4M x 4 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 2K refresh cycle. |
Samsung Electronic |
| 764 |
K4E160412D-F |
4M x 4 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 2K refresh cycle. |
Samsung Electronic |
| 765 |
K4E170411D |
4M x 4Bit CMOS Dynamic RAM with Extended Data Out |
Samsung Electronic |
| 766 |
K4E170411D-B |
4M x 4 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 4K refresh cycle. |
Samsung Electronic |
| 767 |
K4E170411D-F |
4M x 4 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 4K refresh cycle. |
Samsung Electronic |
| 768 |
K4E170412D |
4M x 4Bit CMOS Dynamic RAM with Extended Data Out |
Samsung Electronic |
| 769 |
K4E170412D-B |
4M x 4 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 4K refresh cycle. |
Samsung Electronic |
| 770 |
K4E170412D-F |
4M x 4 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 4K refresh cycle. |
Samsung Electronic |
| 771 |
K4E641612B |
4M x 16bit CMOS Dynamic RAM with Extended Data Out |
Samsung Electronic |
| 772 |
K4E641612B-L |
4M x 16bit CMOS Dynamic RAM with Extended Data Out |
Samsung Electronic |
| 773 |
K4E641612B-TC |
4M x 16bit CMOS Dynamic RAM with Extended Data Out |
Samsung Electronic |
| 774 |
K4E641612B-TC45 |
4M x 16bit CMOS dynamic RAM with extended data out, 3.3V power supply, 45ns |
Samsung Electronic |
| 775 |
K4E641612B-TC50 |
4M x 16bit CMOS dynamic RAM with extended data out, 3.3V power supply, 50ns |
Samsung Electronic |
| 776 |
K4E641612B-TC60 |
4M x 16bit CMOS dynamic RAM with extended data out, 3.3V power supply, 60ns |
Samsung Electronic |
| 777 |
K4E641612B-TL45 |
4M x 16bit CMOS dynamic RAM with extended data out, 3.3V power supply, 45ns, low power |
Samsung Electronic |
| 778 |
K4E641612B-TL50 |
4M x 16bit CMOS dynamic RAM with extended data out, 3.3V power supply, 50ns, low power |
Samsung Electronic |
| 779 |
K4E641612B-TL60 |
4M x 16bit CMOS dynamic RAM with extended data out, 3.3V power supply, 60ns, low power |
Samsung Electronic |
| 780 |
K4E641612C |
4M x 16bit CMOS Dynamic RAM with Extended Data Out |
Samsung Electronic |
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