No. |
Part Name |
Description |
Manufacturer |
751 |
K4R271869B-NCK7 |
256K x 18 x 32s banks direct RDRAM. Access time: 45 ns, I/O freq.: 711 MHz. |
Samsung Electronic |
752 |
K4R271869B-NCK8 |
256K x 18 x 32s banks direct RDRAM. Access time: 45 ns, I/O freq.: 800 MHz. |
Samsung Electronic |
753 |
K4R441869A-N(M)CG6 |
256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM |
Samsung Electronic |
754 |
K4R441869A-N(M)CK7 |
256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM |
Samsung Electronic |
755 |
K4R441869A-N(M)CK8 |
256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM |
Samsung Electronic |
756 |
K4R441869AM-CG6 |
256K x 18 x 32s dependent banks direct RDRAM. Access time: 53.3 ns, I/O freq. 600 MHz. |
Samsung Electronic |
757 |
K4R441869AM-CK7 |
256K x 18 x 32s dependent banks direct RDRAM. Access time: 45 ns, I/O freq. 711 MHz. |
Samsung Electronic |
758 |
K4R441869AM-CK8 |
256K x 18 x 32s dependent banks direct RDRAM. Access time: 45 ns, I/O freq. 800 MHz. |
Samsung Electronic |
759 |
K4R441869AN-CG6 |
256K x 18 x 32s dependent banks direct RDRAM. Access time: 53.3 ns, I/O freq. 600 MHz. |
Samsung Electronic |
760 |
K4R441869AN-CK7 |
256K x 18 x 32s dependent banks direct RDRAM. Access time: 45 ns, I/O freq. 711 MHz. |
Samsung Electronic |
761 |
K4R441869AN-CK8 |
256K x 18 x 32s dependent banks direct RDRAM. Access time: 45 ns, I/O freq. 800 MHz. |
Samsung Electronic |
762 |
K4R441869B-N(M)CG6 |
256K x 16/18 bit x 32s banks Direct RDRAMTM |
Samsung Electronic |
763 |
K4R441869B-N(M)CK7 |
256K x 16/18 bit x 32s banks Direct RDRAMTM |
Samsung Electronic |
764 |
K4R441869B-N(M)CK8 |
256K x 16/18 bit x 32s banks Direct RDRAMTM |
Samsung Electronic |
765 |
K4R521669A |
250 to 0.13V; 512/576Mbit short channel direct 1066MHz RDRAM (A-die) ; 1M x 16 / 18bit x 32s banks |
Samsung Electronic |
766 |
K4R761869A |
250 to 0.13V; 512/576Mbit short channel direct 1066MHz RDRAM (A-die) ; 1M x 16 / 18bit x 32s banks |
Samsung Electronic |
767 |
K4R761869A-F |
576Mbit RDRAM (A-die) 1M x 18bit x 32s banks Direct RDRAMTM |
Samsung Electronic |
768 |
K4R761869A-FBCCN1 |
576Mbit RDRAM (A-die) 1M x 18bit x 32s banks Direct RDRAMTM |
Samsung Electronic |
769 |
K4R761869A-FCM8 |
576Mbit RDRAM (A-die) 1M x 18bit x 32s banks Direct RDRAMTM |
Samsung Electronic |
770 |
K4R761869A-FCT9 |
576Mbit RDRAM (A-die) 1M x 18bit x 32s banks Direct RDRAMTM |
Samsung Electronic |
771 |
K4R761869A-GCM8 |
576Mbit RDRAM (A-die) 1M x 18bit x 32s banks Direct RDRAMTM |
Samsung Electronic |
772 |
K4R761869A-GCN1 |
576Mbit RDRAM (A-die) 1M x 18bit x 32s banks Direct RDRAMTM |
Samsung Electronic |
773 |
K4R761869A-GCT9 |
576Mbit RDRAM (A-die) 1M x 18bit x 32s banks Direct RDRAMTM |
Samsung Electronic |
774 |
K4R881869 |
288Mbit RDRAM 512K x 18 bit x 2*16 Dependent Banks Direct RDRAMTM |
Samsung Electronic |
775 |
K4R881869M-NBCCG6 |
288Mbit RDRAM 512K x 18 bit x 2*16 Dependent Banks Direct RDRAMTM |
Samsung Electronic |
776 |
K4R881869M-NCK7 |
288Mbit RDRAM 512K x 18 bit x 2*16 Dependent Banks Direct RDRAMTM |
Samsung Electronic |
777 |
K4R881869M-NCK8 |
288Mbit RDRAM 512K x 18 bit x 2*16 Dependent Banks Direct RDRAMTM |
Samsung Electronic |
778 |
K4S160822D |
1M x 8bit x 2 Banks Synchronous DRAM LVTTL |
Samsung Electronic |
779 |
K4S160822DT-G/F10 |
2Mx8 SDRAM 1M x 8bit x 2 Banks Synchronous DRAM LVTTL |
Samsung Electronic |
780 |
K4S160822DT-G/F7 |
2Mx8 SDRAM 1M x 8bit x 2 Banks Synchronous DRAM LVTTL |
Samsung Electronic |
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