| No. |
Part Name |
Description |
Manufacturer |
| 751 |
1N5396G |
GLASS PASSIVATED JUNCTION SILICON RECTIFIERS |
EIC discrete Semiconductors |
| 752 |
1N5397G |
GLASS PASSIVATED JUNCTION SILICON RECTIFIERS |
EIC discrete Semiconductors |
| 753 |
1N5397S |
Discrete Devices -Diode-Standard Rectifier |
Taiwan Semiconductor |
| 754 |
1N5398G |
GLASS PASSIVATED JUNCTION SILICON RECTIFIERS |
EIC discrete Semiconductors |
| 755 |
1N5398S |
Discrete Devices -Diode-Standard Rectifier |
Taiwan Semiconductor |
| 756 |
1N5399G |
GLASS PASSIVATED JUNCTION SILICON RECTIFIERS |
EIC discrete Semiconductors |
| 757 |
1N5399S |
Discrete Devices -Diode-Standard Rectifier |
Taiwan Semiconductor |
| 758 |
1N5400G |
GLASS PASSIVATED JUNCTION SILICON RECTIFIERS |
EIC discrete Semiconductors |
| 759 |
1N5401G |
GLASS PASSIVATED JUNCTION SILICON RECTIFIERS |
EIC discrete Semiconductors |
| 760 |
1N5402G |
GLASS PASSIVATED JUNCTION SILICON RECTIFIERS |
EIC discrete Semiconductors |
| 761 |
1N5404G |
GLASS PASSIVATED JUNCTION SILICON RECTIFIERS |
EIC discrete Semiconductors |
| 762 |
1N5406G |
GLASS PASSIVATED JUNCTION SILICON RECTIFIERS |
EIC discrete Semiconductors |
| 763 |
1N5407G |
GLASS PASSIVATED JUNCTION SILICON RECTIFIERS |
EIC discrete Semiconductors |
| 764 |
1N5408G |
GLASS PASSIVATED JUNCTION SILICON RECTIFIERS |
EIC discrete Semiconductors |
| 765 |
1N542 |
Germanium diode, ratio detectors-discriminators |
SESCOSEM |
| 766 |
1N5817 |
SCHOTTKY BARRIER RECTIFIER DIODES |
EIC discrete Semiconductors |
| 767 |
1N5817 |
20V 1A Schottky Discrete Diode in a DO-204AL package |
International Rectifier |
| 768 |
1N5817G |
20 V, 1.0 A schottky barrier rectifier diode |
EIC discrete Semiconductors |
| 769 |
1N5818 |
SCHOTTKY BARRIER RECTIFIER DIODES |
EIC discrete Semiconductors |
| 770 |
1N5818 |
30V 1A Schottky Discrete Diode in a DO-204AL package |
International Rectifier |
| 771 |
1N5818G |
30 V, 1.0 A schottky barrier rectifier diode |
EIC discrete Semiconductors |
| 772 |
1N5818TR |
30V 1A Schottky Discrete Diode in a DO-204AL package |
International Rectifier |
| 773 |
1N5819 |
SCHOTTKY BARRIER RECTIFIER DIODES |
EIC discrete Semiconductors |
| 774 |
1N5819 |
40V 1A Schottky Discrete Diode in a DO-204AL package |
International Rectifier |
| 775 |
1N5819G |
40 V, 1.0 A schottky barrier rectifier diode |
EIC discrete Semiconductors |
| 776 |
1N5819TR |
40V 1A Schottky Discrete Diode in a DO-204AL package |
International Rectifier |
| 777 |
1N5820 |
SCHOTTKY BARRIER RECTIFIER DIODES |
EIC discrete Semiconductors |
| 778 |
1N5820 |
20V 3A Schottky Discrete Diode in a C-16 package |
International Rectifier |
| 779 |
1N5820S |
SCHOTTKY BARRIER RECTIFIER DIODES |
EIC discrete Semiconductors |
| 780 |
1N5821 |
SCHOTTKY BARRIER RECTIFIER DIODES |
EIC discrete Semiconductors |
| | | |
