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Datasheets for EXTEN

Datasheets found :: 1729
Page: | 22 | 23 | 24 | 25 | 26 | 27 | 28 | 29 | 30 |
No. Part Name Description Manufacturer
751 KM416V1004BJ-6 3.3V, 1M x 16 bit CMOS DRAM with extended data out, 60ns Samsung Electronic
752 KM416V1004BJ-7 3.3V, 1M x 16 bit CMOS DRAM with extended data out, 70ns Samsung Electronic
753 KM416V1004BJ-L5 3.3V, 1M x 16 bit CMOS DRAM with extended data out, 50ns Samsung Electronic
754 KM416V1004BJ-L6 3.3V, 1M x 16 bit CMOS DRAM with extended data out, 60ns Samsung Electronic
755 KM416V1004BJ-L7 3.3V, 1M x 16 bit CMOS DRAM with extended data out, 70ns Samsung Electronic
756 KM416V1004BT-5 3.3V, 1M x 16 bit CMOS DRAM with extended data out, 50ns Samsung Electronic
757 KM416V1004BT-6 3.3V, 1M x 16 bit CMOS DRAM with extended data out, 60ns Samsung Electronic
758 KM416V1004BT-7 3.3V, 1M x 16 bit CMOS DRAM with extended data out, 70ns Samsung Electronic
759 KM416V1004BT-L5 3.3V, 1M x 16 bit CMOS DRAM with extended data out, 50ns Samsung Electronic
760 KM416V1004BT-L6 3.3V, 1M x 16 bit CMOS DRAM with extended data out, 60ns Samsung Electronic
761 KM416V1004BT-L7 3.3V, 1M x 16 bit CMOS DRAM with extended data out, 70ns Samsung Electronic
762 KM416V1004C 1M x 16Bit CMOS Dynamic RAM with Extended Data Out Samsung Electronic
763 KM416V1004CJ-45 1M x 16Bit CMOS dynamic RAM with extended data out, 45ns, VCC=3.3V, refresh period=64ms Samsung Electronic
764 KM416V1004CJ-5 3.3V, 1M x 16 bit CMOS DRAM with extended data out, 50ns Samsung Electronic
765 KM416V1004CJ-50 1M x 16Bit CMOS dynamic RAM with extended data out, 50ns, VCC=3.3V, refresh period=64ms Samsung Electronic
766 KM416V1004CJ-6 3.3V, 1M x 16 bit CMOS DRAM with extended data out, 60ns Samsung Electronic
767 KM416V1004CJ-60 1M x 16Bit CMOS dynamic RAM with extended data out, 60ns, VCC=3.3V, refresh period=64ms Samsung Electronic
768 KM416V1004CJ-L5 3.3V, 1M x 16 bit CMOS DRAM with extended data out, 50ns Samsung Electronic
769 KM416V1004CJ-L6 3.3V, 1M x 16 bit CMOS DRAM with extended data out, 60ns Samsung Electronic
770 KM416V1004CJL-45 1M x 16Bit CMOS dynamic RAM with extended data out, 45ns, VCC=3.3V, self-refresh Samsung Electronic
771 KM416V1004CJL-50 1M x 16Bit CMOS dynamic RAM with extended data out, 50ns, VCC=3.3V, self-refresh Samsung Electronic
772 KM416V1004CJL-60 1M x 16Bit CMOS dynamic RAM with extended data out, 60ns, VCC=3.3V, self-refresh Samsung Electronic
773 KM416V1004CT-45 1M x 16Bit CMOS dynamic RAM with extended data out, 45ns, VCC=3.3V, refresh period=64ms Samsung Electronic
774 KM416V1004CT-5 3.3V, 1M x 16 bit CMOS DRAM with extended data out, 50ns Samsung Electronic
775 KM416V1004CT-50 1M x 16Bit CMOS dynamic RAM with extended data out, 50ns, VCC=3.3V, refresh period=64ms Samsung Electronic
776 KM416V1004CT-6 3.3V, 1M x 16 bit CMOS DRAM with extended data out, 60ns Samsung Electronic
777 KM416V1004CT-60 1M x 16Bit CMOS dynamic RAM with extended data out, 60ns, VCC=3.3V, refresh period=64ms Samsung Electronic
778 KM416V1004CT-L5 3.3V, 1M x 16 bit CMOS DRAM with extended data out, 50ns Samsung Electronic
779 KM416V1004CT-L6 3.3V, 1M x 16 bit CMOS DRAM with extended data out, 60ns Samsung Electronic
780 KM416V1004CTL-45 1M x 16Bit CMOS dynamic RAM with extended data out, 45ns, VCC=3.3V, self-refresh Samsung Electronic


Datasheets found :: 1729
Page: | 22 | 23 | 24 | 25 | 26 | 27 | 28 | 29 | 30 |



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