No. |
Part Name |
Description |
Manufacturer |
751 |
KM416V1004BJ-6 |
3.3V, 1M x 16 bit CMOS DRAM with extended data out, 60ns |
Samsung Electronic |
752 |
KM416V1004BJ-7 |
3.3V, 1M x 16 bit CMOS DRAM with extended data out, 70ns |
Samsung Electronic |
753 |
KM416V1004BJ-L5 |
3.3V, 1M x 16 bit CMOS DRAM with extended data out, 50ns |
Samsung Electronic |
754 |
KM416V1004BJ-L6 |
3.3V, 1M x 16 bit CMOS DRAM with extended data out, 60ns |
Samsung Electronic |
755 |
KM416V1004BJ-L7 |
3.3V, 1M x 16 bit CMOS DRAM with extended data out, 70ns |
Samsung Electronic |
756 |
KM416V1004BT-5 |
3.3V, 1M x 16 bit CMOS DRAM with extended data out, 50ns |
Samsung Electronic |
757 |
KM416V1004BT-6 |
3.3V, 1M x 16 bit CMOS DRAM with extended data out, 60ns |
Samsung Electronic |
758 |
KM416V1004BT-7 |
3.3V, 1M x 16 bit CMOS DRAM with extended data out, 70ns |
Samsung Electronic |
759 |
KM416V1004BT-L5 |
3.3V, 1M x 16 bit CMOS DRAM with extended data out, 50ns |
Samsung Electronic |
760 |
KM416V1004BT-L6 |
3.3V, 1M x 16 bit CMOS DRAM with extended data out, 60ns |
Samsung Electronic |
761 |
KM416V1004BT-L7 |
3.3V, 1M x 16 bit CMOS DRAM with extended data out, 70ns |
Samsung Electronic |
762 |
KM416V1004C |
1M x 16Bit CMOS Dynamic RAM with Extended Data Out |
Samsung Electronic |
763 |
KM416V1004CJ-45 |
1M x 16Bit CMOS dynamic RAM with extended data out, 45ns, VCC=3.3V, refresh period=64ms |
Samsung Electronic |
764 |
KM416V1004CJ-5 |
3.3V, 1M x 16 bit CMOS DRAM with extended data out, 50ns |
Samsung Electronic |
765 |
KM416V1004CJ-50 |
1M x 16Bit CMOS dynamic RAM with extended data out, 50ns, VCC=3.3V, refresh period=64ms |
Samsung Electronic |
766 |
KM416V1004CJ-6 |
3.3V, 1M x 16 bit CMOS DRAM with extended data out, 60ns |
Samsung Electronic |
767 |
KM416V1004CJ-60 |
1M x 16Bit CMOS dynamic RAM with extended data out, 60ns, VCC=3.3V, refresh period=64ms |
Samsung Electronic |
768 |
KM416V1004CJ-L5 |
3.3V, 1M x 16 bit CMOS DRAM with extended data out, 50ns |
Samsung Electronic |
769 |
KM416V1004CJ-L6 |
3.3V, 1M x 16 bit CMOS DRAM with extended data out, 60ns |
Samsung Electronic |
770 |
KM416V1004CJL-45 |
1M x 16Bit CMOS dynamic RAM with extended data out, 45ns, VCC=3.3V, self-refresh |
Samsung Electronic |
771 |
KM416V1004CJL-50 |
1M x 16Bit CMOS dynamic RAM with extended data out, 50ns, VCC=3.3V, self-refresh |
Samsung Electronic |
772 |
KM416V1004CJL-60 |
1M x 16Bit CMOS dynamic RAM with extended data out, 60ns, VCC=3.3V, self-refresh |
Samsung Electronic |
773 |
KM416V1004CT-45 |
1M x 16Bit CMOS dynamic RAM with extended data out, 45ns, VCC=3.3V, refresh period=64ms |
Samsung Electronic |
774 |
KM416V1004CT-5 |
3.3V, 1M x 16 bit CMOS DRAM with extended data out, 50ns |
Samsung Electronic |
775 |
KM416V1004CT-50 |
1M x 16Bit CMOS dynamic RAM with extended data out, 50ns, VCC=3.3V, refresh period=64ms |
Samsung Electronic |
776 |
KM416V1004CT-6 |
3.3V, 1M x 16 bit CMOS DRAM with extended data out, 60ns |
Samsung Electronic |
777 |
KM416V1004CT-60 |
1M x 16Bit CMOS dynamic RAM with extended data out, 60ns, VCC=3.3V, refresh period=64ms |
Samsung Electronic |
778 |
KM416V1004CT-L5 |
3.3V, 1M x 16 bit CMOS DRAM with extended data out, 50ns |
Samsung Electronic |
779 |
KM416V1004CT-L6 |
3.3V, 1M x 16 bit CMOS DRAM with extended data out, 60ns |
Samsung Electronic |
780 |
KM416V1004CTL-45 |
1M x 16Bit CMOS dynamic RAM with extended data out, 45ns, VCC=3.3V, self-refresh |
Samsung Electronic |
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