| No. |
Part Name |
Description |
Manufacturer |
| 751 |
KSY62B |
NPN transistor for high speed switching circuits |
Tesla Elektronicke |
| 752 |
KSY63 |
NPN transistor for high speed switching circuits |
Tesla Elektronicke |
| 753 |
KSY71 |
NPN transistor for very high speed switching circuits |
Tesla Elektronicke |
| 754 |
KSY72 |
NPN transistor for very high speed switching circuits |
Tesla Elektronicke |
| 755 |
KTK5132 |
N CHANNEL MOS FIELD EFFECT TRANSISTOR (ULTRA-HIGH SPEED SWITCHING/ ANALOG SWITCH) |
Korea Electronics (KEC) |
| 756 |
KTK5162 |
N CHANNEL MOS FIELD EFFECT TRANSISTOR (ULTRA-HIGH SPEED SWITCHING/ ANALOG SWITCH) |
Korea Electronics (KEC) |
| 757 |
KTX301 |
EPITAXIAL PLANAR PNP TRANSISTOR SILICON EPITAXIAL PLANAR TYPE DIODE (GENERAL PURPOSE/ ULTRA HIGH SPEED SWITCHING) |
Korea Electronics (KEC) |
| 758 |
MC2831 |
Small signal diode. For high speed switching application. Silicon epitaxial type. Peak reverse voltage 75 V. |
Isahaya Electronics Corporation |
| 759 |
MC2832 |
Small signal diode. For high speed switching application. Silicon epitaxial type. Peak reverse voltage 75 V. |
Isahaya Electronics Corporation |
| 760 |
MC2833 |
Small signal diode. For high speed switching application. Silicon epitaxial type. Peak reverse voltage 75 V. |
Isahaya Electronics Corporation |
| 761 |
MC2834 |
Small signal diode. For high speed switching application. Silicon epitaxial type. Peak reverse voltage 75 V. |
Isahaya Electronics Corporation |
| 762 |
MC2837 |
Small signal diode. For high speed switching application. Silicon epitaxial type. Peak reverse voltage 85 V. |
Isahaya Electronics Corporation |
| 763 |
MC2838 |
Small signal diode. For high speed switching application. Silicon epitaxial type. Peak reverse voltage 75 V. |
Isahaya Electronics Corporation |
| 764 |
MC2839 |
Small signal diode. For high speed switching application. Silicon epitaxial type. Peak reverse voltage 85 V. |
Isahaya Electronics Corporation |
| 765 |
MC2841 |
FOR HIGH SPEED SWITCHING APPLICATION SILICON EPITAXIAL TYPE |
Isahaya Electronics Corporation |
| 766 |
MC2844 |
Small signal diode. For high speed switching application. Silicon epitaxial type. Peak reverse voltage 75 V. |
Isahaya Electronics Corporation |
| 767 |
MC2845 |
Small signal diode. For high speed switching application. Silicon epitaxial type. Peak reverse voltage 35 V. |
Isahaya Electronics Corporation |
| 768 |
MC2846 |
Small signal diode. For high speed switching application. Silicon epitaxial type. Peak reverse voltage 75 V. |
Isahaya Electronics Corporation |
| 769 |
MC2848 |
FOR HIGH SPEED SWITCHING APPLICATION SILICON EPITAXIAL TYPE |
Isahaya Electronics Corporation |
| 770 |
MC2852 |
Diode. For high speed switching application. Silicon epitaxial type. Peak reverse voltage 75 V. |
Isahaya Electronics Corporation |
| 771 |
MC2854 |
Diode. For high speed switching application. Silicon epitaxial type. Peak reverse voltage 75 V. |
Isahaya Electronics Corporation |
| 772 |
MC961 |
Diode. For high speed switching application. Silicon epitaxial type. Peak reverse voltage 75 V. |
Isahaya Electronics Corporation |
| 773 |
MC981 |
Diode. For high speed switching application. Silicon epitaxial type. Peak reverse voltage 75 V. |
Isahaya Electronics Corporation |
| 774 |
MC982 |
Diode. For high speed switching application. Silicon epitaxial type. Peak reverse voltage 35 V. |
Isahaya Electronics Corporation |
| 775 |
MCH3312 |
P-Channel MOSFET for Ultra-high Speed Switching |
ON Semiconductor |
| 776 |
MCH3406 |
Ultra-high speed switching |
ON Semiconductor |
| 777 |
MCH3412 |
Ultra-high speed switching |
ON Semiconductor |
| 778 |
MCH6307 |
P-Channel MOSFET for Ultra-high Speed Switching Applications |
ON Semiconductor |
| 779 |
MG100Q2YS65H |
IGBT Module Silicon N Channel IGBT High Power & High Speed Switching Applications |
TOSHIBA |
| 780 |
MG150Q2YS65H |
IGBT Module Silicon N Channel IGBT High Power & High Speed Switching Applications |
TOSHIBA |
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