| No. |
Part Name |
Description |
Manufacturer |
| 751 |
IR3575MTRPBF |
60A exposed top integrated PowIRstage - synchronous buck gate driver IC with co-packed control and synchronous MOSFETs and Schottky diode. |
International Rectifier |
| 752 |
IR3578 |
Integrated PowIRstage is a synchronous buck gate driver IC with co-packed control and synchronous MOSFETs and Schottky diode. |
International Rectifier |
| 753 |
IR3578MTRPBF |
Integrated PowIRstage is a synchronous buck gate driver IC with co-packed control and synchronous MOSFETs and Schottky diode. |
International Rectifier |
| 754 |
IR3579 |
Integrated PowIRstage is a synchronous buck gate driver IC with co-packed control and synchronous MOSFETs and Schottky diode. |
International Rectifier |
| 755 |
IR3579A |
Integrated PowIRstage is a synchronous buck gate driver IC with co-packed control and synchronous MOSFETs and Schottky diode. |
International Rectifier |
| 756 |
IR3579AMTRPBF |
Integrated PowIRstage is a synchronous buck gate driver IC with co-packed control and synchronous MOSFETs and Schottky diode. |
International Rectifier |
| 757 |
IR3579MTRPBF |
Integrated PowIRstage is a synchronous buck gate driver IC with co-packed control and synchronous MOSFETs and Schottky diode. |
International Rectifier |
| 758 |
IR3742 |
Integrated PowIRstage is a synchronous buck gate driver IC with co-packed control and synchronous MOSFETs and Schottky diode. |
International Rectifier |
| 759 |
IR3742MTRPBF |
Integrated PowIRstage is a synchronous buck gate driver IC with co-packed control and synchronous MOSFETs and Schottky diode. |
International Rectifier |
| 760 |
ISL12022 |
Low Power RTC with Battery-Backed SRAM and Embedded Temp Compensation �5ppm with Auto Day Light Saving |
Intersil |
| 761 |
ISL12022M |
Low Power RTC with Battery Backed SRAM, Integrated �5ppm Temperature Compensation and Auto Daylight Saving |
Intersil |
| 762 |
ISL12022MA |
Low Power RTC with Battery Backed SRAM, Integrated �5ppm Temperature Compensation and Auto Daylight Saving |
Intersil |
| 763 |
ISL12022MR5421 |
Low Power RTC with Battery Backed SRAM, Integrated �5ppm Temperature Compensation and Auto Daylight Saving |
Intersil |
| 764 |
ISL12023 |
Low Power RTC with Battery-Backed SRAM and Embedded Temp Compensation �5ppm with Auto Day Light Saving |
Intersil |
| 765 |
ISL12032 |
Low Power RTC with Battery Backed SRAM and 50/60 Cycle AC Input and Xtal Back-up |
Intersil |
| 766 |
ISL1208 |
I2C� Real Time Clock/Calendar, Low Power RTC with Battery Backed SRAM |
Intersil |
| 767 |
ISL1209 |
Low Power RTC with Battery Backed SRAM and Event Detection |
Intersil |
| 768 |
ISL1218 |
Low Power RTC with Battery Backed SRAM |
Intersil |
| 769 |
ISL1219 |
Low Power RTC with Battery Backed SRAM and Event Detection |
Intersil |
| 770 |
ISL1220 |
Low Power RTC with 8 Bytes of Battery Backed SRAM and Separate FOUT |
Intersil |
| 771 |
ISL1221 |
Low Power RTC with Battery Backed SRAM and Event Detection |
Intersil |
| 772 |
ITT945 |
Clocked Flip-Flops |
ITT Semiconductors |
| 773 |
ITT948 |
Clocked Flip-Flops |
ITT Semiconductors |
| 774 |
K4H1G0638C |
Stacked 1Gb C-die DDR SDRAM Specification |
Samsung Electronic |
| 775 |
K4H1G0638C-UC/LA2 |
Stacked 1Gb C-die DDR SDRAM Specification |
Samsung Electronic |
| 776 |
K4H1G0638C-UC/LB0 |
Stacked 1Gb C-die DDR SDRAM Specification |
Samsung Electronic |
| 777 |
K4H1G0738C-UC/LA2 |
Stacked 1Gb C-die DDR SDRAM Specification |
Samsung Electronic |
| 778 |
K4H1G0738C-UC/LB0 |
Stacked 1Gb C-die DDR SDRAM Specification |
Samsung Electronic |
| 779 |
K4H510638E-TC/LA2 |
Stacked 512Mb E-die DDR SDRAM Specification (x4/x8) |
Samsung Electronic |
| 780 |
K4H510638E-TC/LAA |
Stacked 512Mb E-die DDR SDRAM Specification (x4/x8) |
Samsung Electronic |
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