| No. |
Part Name |
Description |
Manufacturer |
| 751 |
15A8PS0 |
Selenium Contact Protector Rectifiers, DC applications - 10 breaks/second max |
ITT Semiconductors |
| 752 |
15A8PS1 |
Selenium Contact Protector Rectifiers, DC applications - 40 breaks/second max |
ITT Semiconductors |
| 753 |
15A9HS0 |
Selenium Contact Protector Rectifiers, DC applications - 10 breaks/second max |
ITT Semiconductors |
| 754 |
15A9HS1 |
Selenium Contact Protector Rectifiers, DC applications - 40 breaks/second max |
ITT Semiconductors |
| 755 |
15A9PS0 |
Selenium Contact Protector Rectifiers, DC applications - 10 breaks/second max |
ITT Semiconductors |
| 756 |
15A9PS1 |
Selenium Contact Protector Rectifiers, DC applications - 40 breaks/second max |
ITT Semiconductors |
| 757 |
1600EXD25 |
ALLOY-FREE RECTIFIER (RECTIFIER APPLICATIONS) |
TOSHIBA |
| 758 |
1600FXD25 |
ALLOY-FREE RECTIFIER (RECTIFIER APPLICATIONS) |
TOSHIBA |
| 759 |
1600GXD22 |
ALLOY-FREE (RECTIFIER APPLICATIONS) |
TOSHIBA |
| 760 |
1616-050 |
High power Class C, CW transistor designed for 1.6GHz satellite communications applications including GPS and INMARSAT |
SGS Thomson Microelectronics |
| 761 |
16DL2DZ47A |
HIGH EFFICIENCY DIODE STACK (SWITCHING TYPE POWER LUPPLY APPLICATION) |
TOSHIBA |
| 762 |
16FWJ2C42 |
SCHOTTKY BARRIER RECTIFIER STACK (HIGH SPEED RECTIFIER APPLICATIONS) |
TOSHIBA |
| 763 |
16GWJ2C42 |
SCHOTTKY BARRIER RECTIFIER STACK (SWITCHING TYPE POWER SUPPLY APPLICATION.) |
TOSHIBA |
| 764 |
16GWJ2CZ47 |
SCHOTTKY BARRIER RECTIFIER STACK (SWITCHING TYPE POWER SUPPLY APPLICATION) |
TOSHIBA |
| 765 |
1720-10 |
1.7-2.0GHz 10W 24V NPN transistor for microwave telecommunication applications |
SGS Thomson Microelectronics |
| 766 |
1720-13 |
1.7-2.0GHz 13W 24V NPN transistor for microwave telecommunication applications |
SGS Thomson Microelectronics |
| 767 |
1720-20 |
1.7-2.0GHz 20W 24V NPN transistor for microwave telecommunication applications |
SGS Thomson Microelectronics |
| 768 |
1720-25 |
1.7-2.0GHz 25W 24V NPN transistor for microwave telecommunication applications |
SGS Thomson Microelectronics |
| 769 |
1720-3 |
1.7-2.0GHz 3W 24V NPN transistor for microwave telecommunication applications |
SGS Thomson Microelectronics |
| 770 |
1720-6 |
1.7-2.0GHz 6W 24V NPN transistor for microwave telecommunication applications |
SGS Thomson Microelectronics |
| 771 |
1815 |
Silicon NPN Epitaxail Type(for Audio Frequency General Purpose Amplifier Applications) |
TOSHIBA |
| 772 |
1837 |
2.3GHz 2W 20V NPN silicon transistor suited for applications in S-Band power oscillator circuit |
SGS Thomson Microelectronics |
| 773 |
1838 |
2.3GHz 3W 20V NPN silicon transistor suited for applications in S-Band power oscillator circuit |
SGS Thomson Microelectronics |
| 774 |
1888-03 |
RF & MICROWAVE TRANSISTORS 1.6 GHz SATCOM APPLICATIONS |
SGS Thomson Microelectronics |
| 775 |
1888-03 |
RF & MICROWAVE TRANSISTORS 1.6 GHz SATCOM APPLICATIONS |
ST Microelectronics |
| 776 |
1891-03 |
RF & MICROWAVE TRANSISTORS 1.6 GHz SATCOM APPLICATIONS |
SGS Thomson Microelectronics |
| 777 |
1891-03 |
RF & MICROWAVE TRANSISTORS 1.6 GHz SATCOM APPLICATIONS |
ST Microelectronics |
| 778 |
1893 |
1.65GHz 10W 28V NPN Silicon RF Transistor designed for MARISAT Applications |
SGS Thomson Microelectronics |
| 779 |
1893-03 |
RF & MICROWAVE TRANSISTORS 1.6 GHZ SATCOM APPLICATIONS |
SGS Thomson Microelectronics |
| 780 |
1893-03 |
RF & MICROWAVE TRANSISTORS 1.6 GHZ SATCOM APPLICATIONS |
ST Microelectronics |
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