No. |
Part Name |
Description |
Manufacturer |
751 |
2SB736A |
AUDIO FREQUENCY POWER AMPLIFIER PNP SILICON EPITAXIAL TRANSISTOR(MINI MOLD) |
NEC |
752 |
2SB754 |
HIGH CURRENT SWITCHING/ POWER AMPLIFIER APPLICATIONS |
TOSHIBA |
753 |
2SB815 |
PNP Epitaxial Planar Silicon Transistors General-Purpose AF Amplifier Applications |
SANYO |
754 |
2SB817 |
PNP PLANAR SILICON TRANSISTOR(AUDIO POWER AMPLIFIER DC TO DC CONVERTER) |
Wing Shing Computer Components |
755 |
2SB817P |
General-Purpose Amplifier Transistors |
SANYO |
756 |
2SB852KT146B |
PNP High gain amplifier Transistor(Darlington) |
ROHM |
757 |
2SB905 |
Transistor Silicon PNP Epitaxial Type (PCT process) Power Amplifier Applications |
TOSHIBA |
758 |
2SB906 |
TRANSISTOR SILICON PNP TRIPLE DIFFUSED TYPE (PCT PROCESS). AUDIO FREQUENCY POWER AMPLIFIER APPLICATIONS |
TOSHIBA |
759 |
2SB907 |
Transistor Silicon PNP Epitaxial Type (PCT process) Switching Applications Hammer Drive, Pulse Motor Drive Applications Power Amplifier Applications |
TOSHIBA |
760 |
2SB908 |
Transistor Silicon PNP Epitaxial Type (PCT process) Switching Applications Hammer Drive, Pulse Motor Drive Applications Power Amplifier Applications |
TOSHIBA |
761 |
2SB945 |
PNP EPITAXIAL SILICON TRANSISTOR(POWER AMPLIFIER VERTICAL DEFLECTION OUTPUT) |
Wing Shing Computer Components |
762 |
2SC1000 |
Silicon NPN epitaxial planar transistor, low noise audio amplifier applications |
TOSHIBA |
763 |
2SC1000G |
Silicon NPN epitaxial planar transistor, low noise audio amplifier applications |
TOSHIBA |
764 |
2SC1008 |
Low frequency amplifier medium speed switching. Collector-base voltage Vcbo = 80V. Collector-emitter voltage Vceo = 60V. Emitter-base voltage Vebo = 8V. Collector dissipation Pc(max) = 800mW. Collector current Ic = 700mA. |
USHA India LTD |
765 |
2SC1060 |
LOW FREQUENCY POWER AMPLIFIER Complementary pair with 2SA670 and 2SA671 |
Unknow |
766 |
2SC1060 |
LOW FREQUENCY POWER AMPLIFIER Complementary pair with 2SA670 and 2SA671 |
Unknow |
767 |
2SC1079 |
Silicon NPN triple diffused MESA power transistor, high power amplifier applications |
TOSHIBA |
768 |
2SC1080 |
Silicon NPN triple diffused MESA power transistor, high power amplifier applications |
TOSHIBA |
769 |
2SC1120 |
Silicon NPN epitaxial planar transistor 400MHz Land-Mobil Radio RF power amplifier applications (low supply voltage use) |
TOSHIBA |
770 |
2SC1121 |
Silicon NPN epitaxial planar transistor 400MHz Land-Mobil Radio RF power amplifier applications (low supply voltage use) |
TOSHIBA |
771 |
2SC1166 |
Silicon NPN epitaxial planar transistor, driver stage amplifier applications, complementary to 2SA661 |
TOSHIBA |
772 |
2SC1196 |
Silicon NPN epitaxial planar transistor, 700MHz- Power amplifier applications |
TOSHIBA |
773 |
2SC1197 |
Silicon NPN epitaxial planar transistor, 700MHz-Power amplifier applications |
TOSHIBA |
774 |
2SC1198 |
Silicon NPN epitaxial planar transistor, 700MHz-Power amplifier applications |
TOSHIBA |
775 |
2SC1200 |
Silicon NPN epitaxial planar microwave transistor, UHF-S band power amplifier or oscillator applications |
TOSHIBA |
776 |
2SC1377 |
Silicon NPN epitaxial planar transistor, 27MHz, SSB, AM power amplifier applications |
TOSHIBA |
777 |
2SC1399 |
NPN silicon transistor, designed for use in driver stage of AF amplifier and low speed switching |
NEC |
778 |
2SC1400 |
NPN silicon transistor designed for use in AF low noise amplifier of a high-class STEREO-SET |
NEC |
779 |
2SC1514 |
HIGH FREQUENCY HIGH VOLTAGE AMPLIFIER TV VIDEO OUTPUT |
Hitachi Semiconductor |
780 |
2SC1622 |
AUDIO FREQUENCY HIGH GAIN AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR MINI MOLD |
NEC |
| | | |