| No. |
Part Name |
Description |
Manufacturer |
| 751 |
BAS70-06S |
Silicon Schottky Diode Array (General-purpose diode for high-speed switching Circuit protection Voltage clamping) |
Siemens |
| 752 |
BAS70-06W |
Silicon Schottky Diode (General-purpose diodes for high-speed switching Circuit protection Voltage clamping) |
Siemens |
| 753 |
BAS70-07W |
Silicon Schottky Diode (General-purpose diode for high-speed switching Circuit protection Voltage clamping High-level detecting and mixing) |
Siemens |
| 754 |
BAS70W |
Silicon Schottky Diode (General-purpose diodes for high-speed switching Circuit protection Voltage clamping) |
Siemens |
| 755 |
BAS79A |
Silicon Switching Diodes (Switching applications High breakdown voltage Common cathode) |
Siemens |
| 756 |
BAS79B |
Silicon Switching Diodes (Switching applications High breakdown voltage Common cathode) |
Siemens |
| 757 |
BAS79C |
Silicon Switching Diodes (Switching applications High breakdown voltage Common cathode) |
Siemens |
| 758 |
BAS79D |
Silicon Switching Diodes (Switching applications High breakdown voltage Common cathode) |
Siemens |
| 759 |
BAW78A-BAW79D |
Silicon Switching Diodes (For high-speed switching High breakdown voltage Common cathode) |
Siemens |
| 760 |
BAW79A |
Silicon Switching Diodes (For high-speed switching High breakdown voltage Common cathode) |
Siemens |
| 761 |
BAW79B |
Silicon Switching Diodes (For high-speed switching High breakdown voltage Common cathode) |
Siemens |
| 762 |
BAW79C |
Silicon Switching Diodes (For high-speed switching High breakdown voltage Common cathode) |
Siemens |
| 763 |
BAW79D |
Silicon Switching Diodes (For high-speed switching High breakdown voltage Common cathode) |
Siemens |
| 764 |
BCX41 |
NPN Silicon AF and Switching Transistor (High breakdown voltage Low collector-emitter saturation voltage) |
Siemens |
| 765 |
BF421 |
PNP Silicon Transistors (High breakdown voltage Low collector-emitter saturation voltage) |
Siemens |
| 766 |
BF423 |
PNP Silicon Transistors (High breakdown voltage Low collector-emitter saturation voltage) |
Siemens |
| 767 |
BF459 |
Transistor polarity NPN Voltage Vceo 300 V Current Ic av. 0.1 A Power Ptot 6 W |
SGS Thomson Microelectronics |
| 768 |
BF622 |
NPN Silicon High-Voltage Transistor (Suitable for video output stages in TV sets High breakdown voltage Low collector-emitter saturation voltage) |
Siemens |
| 769 |
BF623 |
PNP Silicon High-Voltage Transistor (Suitable for video output stages in TV sets High breakdown voltage Low collector-emitter saturation voltage) |
Siemens |
| 770 |
BFP22 |
NPN Silicon Transistors (High breakdown voltage l Low collector-emitter saturation voltage) |
Siemens |
| 771 |
BFP23 |
PNP Silicon Transistors (High breakdown voltage Low collector-emitter saturation voltage) |
Siemens |
| 772 |
BFP25 |
NPN Silicon Transistors (High breakdown voltage l Low collector-emitter saturation voltage) |
Siemens |
| 773 |
BM60014FV-C |
Isolation voltage 2500Vrms 1ch Gate Driver Providing Galvanic Isolation |
ROHM |
| 774 |
BM60014FV-CE2 |
Isolation voltage 2500Vrms 1ch Gate Driver Providing Galvanic Isolation |
ROHM |
| 775 |
BM60016FV-C |
Isolation voltage 2500Vrms 1ch Gate Driver Providing Galvanic Isolation |
ROHM |
| 776 |
BM60016FV-CE2 |
Isolation voltage 2500Vrms 1ch Gate Driver Providing Galvanic Isolation |
ROHM |
| 777 |
BM60052FV-C |
Isolation voltage 2500Vrms 1ch Gate Driver Providing Galvanic Isolation |
ROHM |
| 778 |
BM60052FV-CE2 |
Isolation voltage 2500Vrms 1ch Gate Driver Providing Galvanic Isolation |
ROHM |
| 779 |
BM60054FV-C |
Isolation voltage 2500Vrms 1ch Gate Driver Providing Galvanic Isolation |
ROHM |
| 780 |
BM60054FV-CE2 |
Isolation voltage 2500Vrms 1ch Gate Driver Providing Galvanic Isolation |
ROHM |
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