| No. |
Part Name |
Description |
Manufacturer |
| 751 |
2N3497 |
PNP silicon annular Star transistor for high voltage switching and DC to VHF amplifier applications |
Motorola |
| 752 |
2N350A |
PNP germanium power transistor for economical power switching applications |
Motorola |
| 753 |
2N3510 |
NPN silicon transistor for high-speed saturated switching applications to 500mA |
Motorola |
| 754 |
2N3511 |
NPN silicon transistor for high-speed saturated switching applications to 500mA |
Motorola |
| 755 |
2N3515 |
Dual NPN silicon transistor for use as a differential amplifier |
Motorola |
| 756 |
2N3518 |
Dual NPN silicon transistor for use as a differential amplifier |
Motorola |
| 757 |
2N351A |
PNP germanium power transistor for economical power switching applications |
Motorola |
| 758 |
2N3544 |
NPN silicon transistor for VHF and UHF oscillator applications |
Motorola |
| 759 |
2N3553 |
Silicon high frequency epitaxial planar transistor for VHF power stages, oscillators and driver stages |
AEG-TELEFUNKEN |
| 760 |
2N3553 |
Silicon NPN overlay epitaxial planar transistor for VHF/UHF transmitting applications |
ICCE |
| 761 |
2N3553 |
Silicon NPN planar epitaxial transistor for transmitter applications at 175 MHz with 28 V supply voltage |
VALVO |
| 762 |
2N3632 |
Silicon NPN epitaxial planar high frequency power transistor for VHF power stages, oscillators and driver stages |
AEG-TELEFUNKEN |
| 763 |
2N3632 |
Silicon NPN overlay epitaxial planar transistor for VHF transmitting applications |
ICCE |
| 764 |
2N3632 |
Silicon NPN planar epitaxial transistor for 175 MHz transmitters at 28 V supply voltage |
VALVO |
| 765 |
2N3647 |
NPN silicon transistor for high-speed saturated switching applications to 500mA |
Motorola |
| 766 |
2N3648 |
NPN silicon transistor for high-speed saturated switching applications to 500mA |
Motorola |
| 767 |
2N3664 |
NPN silicon transistor for power amplifier and driver applications to 500MHz |
Motorola |
| 768 |
2N3713 |
NPN power transistor for medium-speed switching and amplifier applications |
National Semiconductor |
| 769 |
2N3713 |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
| 770 |
2N3714 |
NPN power transistor for medium-speed switching and amplifier applications |
National Semiconductor |
| 771 |
2N3714 |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
| 772 |
2N3715 |
NPN power transistor for medium-speed switching and amplifier applications |
National Semiconductor |
| 773 |
2N3715 |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
| 774 |
2N3716 |
NPN power transistor for medium-speed switching and amplifier applications |
National Semiconductor |
| 775 |
2N3716 |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
| 776 |
2N376A |
PNP germanium power transistor for economical power switching applications |
Motorola |
| 777 |
2N3789 |
PNP power transistor for medium-speed switching and amplifier applications |
National Semiconductor |
| 778 |
2N3789 |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
| 779 |
2N3790 |
PNP power transistor for medium-speed switching and amplifier applications |
National Semiconductor |
| 780 |
2N3790 |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
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