| No. |
Part Name |
Description |
Manufacturer |
| 751 |
PEEL18CV8T-25 |
CMOS Programmable Electrically Erasable Logic Device |
International CMOS Technology |
| 752 |
PEEL18CV8T-5 |
CMOS Programmable Electrically Erasable Logic Device |
International CMOS Technology |
| 753 |
PEEL18CV8T-7 |
CMOS Programmable Electrically Erasable Logic Device |
International CMOS Technology |
| 754 |
PEEL18CV8TI-10 |
CMOS Programmable Electrically Erasable Logic Device |
International CMOS Technology |
| 755 |
PEEL18CV8TI-15 |
CMOS Programmable Electrically Erasable Logic Device |
International CMOS Technology |
| 756 |
PEEL18CV8TI-25 |
CMOS Programmable Electrically Erasable Logic Device |
International CMOS Technology |
| 757 |
PEEL18CV8TI-5 |
CMOS Programmable Electrically Erasable Logic Device |
International CMOS Technology |
| 758 |
PEEL18CV8TI-7 |
CMOS Programmable Electrically Erasable Logic Device |
International CMOS Technology |
| 759 |
PH1955L |
Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. |
Philips |
| 760 |
PM5307 |
9.953 Gbit/s Telecom Bus Serializer |
PMC-Sierra Inc |
| 761 |
PM8610 |
SBS Telecom Standard Product Data Sheet Preliminary |
PMC-Sierra Inc |
| 762 |
PM8610-BIAP |
SBS Telecom Standard Product Data Sheet Preliminary |
PMC-Sierra Inc |
| 763 |
PSB2186-HV1.1 |
ISAC-S TE (ISDN Subscriber Access Con... |
Infineon |
| 764 |
PSB2186-NV1.1 |
ISAC-S TE (ISDN Subscriber Access Con... |
Infineon |
| 765 |
PSB2186-PV1.1 |
ISAC-S TE (ISDN Subscriber Access Con... |
Infineon |
| 766 |
PSMN020-30MLC |
N-channel 30 V 18.1 mΩ logic level MOSFET in LFPAK33 using TrenchMOS Technology |
Nexperia |
| 767 |
PSMN020-30MLC |
N-channel 30 V 18.1 mΩ logic level MOSFET in LFPAK33 using TrenchMOS Technology |
NXP Semiconductors |
| 768 |
PSMN0R9-30ULD |
N-channel 30 V, 0.87 mΩ, 300 A logic level MOSFET in SOT1023A enhanced package for UL2595, using NextPowerS3 Schottky-Plus Technology |
Nexperia |
| 769 |
PSMN1R0-40ULD |
N-channel 40 V, 1.1 mΩ, 280 A logic level MOSFET in SOT1023A enhanced package for UL2595, using NextPower-S3 Schottky-Plus technology |
Nexperia |
| 770 |
PSMN1R0-40YLD |
N-channel 40 V, 1.1 mΩ, 280 A logic level MOSFET in LFPAK56 using NextPower-S3 Schottky-Plus technology |
Nexperia |
| 771 |
PSMN1R0-40YSH |
N-channel 40 V, 1 mΩ, 290 A standard level MOSFET in LFPAK56E using NextPower-S3 Schottky-Plus technology |
Nexperia |
| 772 |
PSMN1R5-40YSD |
N-channel 40 V, 1.5 mΩ, 190 A standard level MOSFET in LFPAK56 using NextPower-S3 Schottky-Plus technology |
Nexperia |
| 773 |
PSMN1R7-40YLD |
N-channel 40 V, 1.7 mΩ, 120 A logic level MOSFET in LFPAK56 using NextPower-S3 Schottky-Plus technology |
Nexperia |
| 774 |
PSMN1R9-40YSD |
N-channel 40 V, 1.9 mΩ, 120 A standard level MOSFET in LFPAK56 using NextPower-S3 Schottky-Plus technology |
Nexperia |
| 775 |
PSMN2R0-40YLD |
N-channel 40 V, 2.1 mΩ, 120 A logic level MOSFET in LFPAK56 using NextPower-S3 Schottky-Plus technology |
Nexperia |
| 776 |
PSMN2R2-40YSD |
N-channel 40 V, 2.2 mΩ, 120 A standard level MOSFET in LFPAK56 using NextPower-S3 Schottky-Plus technology |
Nexperia |
| 777 |
PSMN2R5-40YLD |
N-channel 40 V, 2.5 mΩ, 120 A logic level MOSFET in LFPAK56 using NextPower-S3 Schottky-Plus technology |
Nexperia |
| 778 |
PSMN2R8-40YSD |
N-channel 40 V, 2.7 mΩ, 120 A standard level MOSFET in LFPAK56 using NextPower-S3 Schottky-Plus technology |
Nexperia |
| 779 |
PSMN3R2-40YLD |
N-channel 40 V, 3.1 mΩ, 120 A logic level MOSFET in LFPAK56 using NextPower-S3 Schottky-Plus technology |
Nexperia |
| 780 |
PSMN3R5-40YSD |
N-channel 40 V, 3.5 mΩ, 120 A standard level MOSFET in LFPAK56 using NextPower-S3 Schottky-Plus technology |
Nexperia |
| | | |
