| No. |
Part Name |
Description |
Manufacturer |
| 751 |
C106A |
4A sensitive-gate silicon controlled rectifier. Vrrm 100V. |
General Electric Solid State |
| 752 |
C106B |
4A sensitive-gate silicon controlled rectifier. Vrrm 200V. |
General Electric Solid State |
| 753 |
C106B |
Sensitive Gate Silicon Controlled Rectifier |
ON Semiconductor |
| 754 |
C106C |
4A sensitive-gate silicon controlled rectifier. Vrrm 300V. |
General Electric Solid State |
| 755 |
C106D |
4A sensitive-gate silicon controlled rectifier. Vrrm 400V. |
General Electric Solid State |
| 756 |
C106D |
Sensitive Gate Silicon Controlled Rectifier |
ON Semiconductor |
| 757 |
C106D1 |
Sensitive Gate Silicon Controlled Rectifier |
ON Semiconductor |
| 758 |
C106E |
4A sensitive-gate silicon controlled rectifier. Vrrm 500V. |
General Electric Solid State |
| 759 |
C106F |
4A sensitive-gate silicon controlled rectifier. Vrrm 50V. |
General Electric Solid State |
| 760 |
C106M |
4A sensitive-gate silicon controlled rectifier. Vrrm 600V. |
General Electric Solid State |
| 761 |
C106M |
Sensitive Gate Silicon Controlled Rectifier |
ON Semiconductor |
| 762 |
C106M1 |
Sensitive Gate Silicon Controlled Rectifier |
ON Semiconductor |
| 763 |
C106N |
4A sensitive-gate silicon controlled rectifier. Vrrm 800V. |
General Electric Solid State |
| 764 |
C106S |
4A sensitive-gate silicon controlled rectifier. Vrrm 700V. |
General Electric Solid State |
| 765 |
C3704-02 |
INputV: 5Vdc; max current: 300mA; compact, lightweight, low current consumption, low cost operates as high sensitivity UV sensor with UV TRON suitable for flame detectors and fire alarms |
Hamamatsu Corporation |
| 766 |
C3704-03 |
INputV: 6-9Vdc; max current: 300mA; compact, lightweight, low current consumption, low cost operates as high sensitivity UV sensor with UV TRON suitable for flame detectors and fire alarms |
Hamamatsu Corporation |
| 767 |
CQY10 |
Gallium arsenide luminiscence diode, infrared source for high modulation frequencies. The spectral emission is in range of the spectral sensitivity of silicon photoelektronic devices |
AEG-TELEFUNKEN |
| 768 |
CSM4T17 |
TERMINATION INSENSITIVE MIXER |
MA-Com |
| 769 |
CSM5T17 |
WIDE BAND TERMINATION INSENSITIVE MIXER |
Tyco Electronics |
| 770 |
DBM-701S |
High Level SMA Connectorized Double Balanced Mixer Mismatch Insensitive 1-3500 MHz |
Sirenza Microdevices |
| 771 |
DN8893 |
High Sensitivity Hall IC (Operation in Alternative Magnetic Field) |
Panasonic |
| 772 |
DN8893MS |
High Sensitivity Hall IC (Operating in Alternative Magnetic Field) |
Panasonic |
| 773 |
DS1E-M-DC1.5V |
HIGHLY SENSITIVE 1500 V FCC SURGE WITHSTANDING MINIATURE RELAY |
Matsushita Electric Works(Nais) |
| 774 |
DS1E-M-DC12V |
HIGHLY SENSITIVE 1500 V FCC SURGE WITHSTANDING MINIATURE RELAY |
Matsushita Electric Works(Nais) |
| 775 |
DS1E-M-DC24V |
HIGHLY SENSITIVE 1500 V FCC SURGE WITHSTANDING MINIATURE RELAY |
Matsushita Electric Works(Nais) |
| 776 |
DS1E-M-DC3V |
HIGHLY SENSITIVE 1500 V FCC SURGE WITHSTANDING MINIATURE RELAY |
Matsushita Electric Works(Nais) |
| 777 |
DS1E-M-DC48V |
HIGHLY SENSITIVE 1500 V FCC SURGE WITHSTANDING MINIATURE RELAY |
Matsushita Electric Works(Nais) |
| 778 |
DS1E-M-DC5V |
HIGHLY SENSITIVE 1500 V FCC SURGE WITHSTANDING MINIATURE RELAY |
Matsushita Electric Works(Nais) |
| 779 |
DS1E-M-DC9V |
HIGHLY SENSITIVE 1500 V FCC SURGE WITHSTANDING MINIATURE RELAY |
Matsushita Electric Works(Nais) |
| 780 |
DS1E-ML-DC1.5V |
HIGHLY SENSITIVE 1500 V FCC SURGE WITHSTANDING MINIATURE RELAY |
Matsushita Electric Works(Nais) |
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