No. |
Part Name |
Description |
Manufacturer |
751 |
2N6452 |
N-Channel Silicon Junction Field-Effect Transistor |
InterFET Corporation |
752 |
2N6452 |
N-Channel Silicon Junction Field-Effect Transistor |
Texas Instruments |
753 |
2N6453 |
N-Channel Silicon Junction Field-Effect Transistor |
InterFET Corporation |
754 |
2N6453 |
N-Channel Silicon Junction Field-Effect Transistor |
Texas Instruments |
755 |
2N6454 |
N-Channel Silicon Junction Field-Effect Transistor |
InterFET Corporation |
756 |
2N6454 |
N-Channel Silicon Junction Field-Effect Transistor |
Texas Instruments |
757 |
2N6473 |
EPITAXIAL-BASE, SILICON N-P-N AND P-N-P VERSAWATT TRANSISTORS |
Boca Semiconductor Corporation |
758 |
2N6473 |
Epitaxial-base, silicon N-P-N VERSAWATT transistor. 110V. |
General Electric Solid State |
759 |
2N6474 |
130 V, epitaxial-base NPN selicon versawatt transistor |
Boca Semiconductor Corporation |
760 |
2N6474 |
Epitaxial-base, silicon N-P-N VERSAWATT transistor. 130V. |
General Electric Solid State |
761 |
2N6475 |
EPITAXIAL-BASE, SILICON N-P-N AND P-N-P VERSAWATT TRANSISTORS |
Boca Semiconductor Corporation |
762 |
2N6475 |
Epitaxial-base, silicon P-N-P VERSAWATT transistor. -110V. |
General Electric Solid State |
763 |
2N6476 |
Epitaxial-Base, Silicon N-P-N and P-N-P VERSAWATT Transistors |
Boca Semiconductor Corporation |
764 |
2N6476 |
Epitaxial-base, silicon P-N-P VERSAWATT transistor. -130V. |
General Electric Solid State |
765 |
2N6486 |
15A, 75W, silicon N-P-N epitaxial-base VERSAWATT transistor. 50V. |
General Electric Solid State |
766 |
2N6487 |
15A, 75W, silicon N-P-N epitaxial-base VERSAWATT transistor. 70V. |
General Electric Solid State |
767 |
2N6488 |
15A, 75W, silicon N-P-N epitaxial-base VERSAWATT transistor. 90V. |
General Electric Solid State |
768 |
2N6489 |
15A, 75W, silicon P-N-P epitaxial-base VERSAWATT transistor. -50V. |
General Electric Solid State |
769 |
2N6490 |
15A, 75W, silicon P-N-P epitaxial-base VERSAWATT transistor. -70V. |
General Electric Solid State |
770 |
2N6491 |
15A, 75W, silicon P-N-P epitaxial-base VERSAWATT transistor. -90V. |
General Electric Solid State |
771 |
2N6550 |
N-Channel silicon junction field-effect transistor |
InterFET Corporation |
772 |
2N6659 |
TMOS SWITCHING FET TRANSISTORS |
Motorola |
773 |
2N6660 |
TMOS SWITCHING FET TRANSISTORS |
Motorola |
774 |
2N6661 |
TMOS SWITCHING FET TRANSISTORS |
Motorola |
775 |
2N6702 |
High-current silicon N-P-N VERSAWATT transistor. |
General Electric Solid State |
776 |
2N6703 |
High-current silicon N-P-N VERSAWATT transistor. |
General Electric Solid State |
777 |
2N6704 |
High-current silicon N-P-N VERSAWATT transistor. |
General Electric Solid State |
778 |
2N6755 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current(at Tc 25deg) 12A. |
General Electric Solid State |
779 |
2N6756 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current(at Tc 25deg) 14A. |
General Electric Solid State |
780 |
2N6757 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 150V. Continuous drain current(at Tc 25deg) 8.0A. |
General Electric Solid State |
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