| No. |
Part Name |
Description |
Manufacturer |
| 751 |
FT202D |
NPN Phototransistor |
IPRS Baneasa |
| 752 |
FT202D |
Silicon NPN Epitaxial Planar Phototransistor |
IPRS Baneasa |
| 753 |
FT202E |
NPN Phototransistor |
IPRS Baneasa |
| 754 |
FT202E |
Silicon NPN Epitaxial Planar Phototransistor |
IPRS Baneasa |
| 755 |
GL6T201 |
Super-luminosity/High-luminosity Numeric LED |
SHARP |
| 756 |
GL7T201 |
Super-luminosity/High-luminosity Numeric LED |
SHARP |
| 757 |
GPT200 |
600 V fast recovery diode bridge |
Green Power |
| 758 |
GT20D101 |
INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONS |
TOSHIBA |
| 759 |
GT20D201 |
INSULATED GATE BIPOLAR TRANSISTOR SILICON P CHANNEL IGBT HIGH POWER SWITCHING APPLICATION |
TOSHIBA |
| 760 |
GT20G101 |
INSULATED GATE BIPOLAR TRANSISTOR SILICON N-CHANNEL IGBT STROBE FLASH APPLICATIONS |
TOSHIBA |
| 761 |
GT20G101(SM) |
INSULATED GATE BIPOLAR TRANSISTOR SILICON N-CHANNEL IGBT STROBE FLASH APPLICATIONS |
TOSHIBA |
| 762 |
GT20G101SM |
N CHANNEL IGBT (STROBE FLASH APPLICATIONS) |
TOSHIBA |
| 763 |
GT20G102 |
INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT STROBE FLASH APPLICATIONS |
TOSHIBA |
| 764 |
GT20G102(SM) |
INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT STROBE FLASH APPLICATIONS |
TOSHIBA |
| 765 |
GT20G102SM |
N CHANNEL IGBT (STROBE FLASH APPLICATIONS) |
TOSHIBA |
| 766 |
GT20J101 |
Insulated Gate Bipolar Transistor Silicon N Channel IGBT High Power Switching Applications |
TOSHIBA |
| 767 |
GT20J121 |
IGBT for soft switching applications |
TOSHIBA |
| 768 |
GT20J301 |
INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS |
TOSHIBA |
| 769 |
GT20J311 |
INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS |
TOSHIBA |
| 770 |
GT20J321 |
Insulated Gate Bipolar Transistor Silicon N Chanenel IGBT High Power Switching Applications Fast Switching Applications |
TOSHIBA |
| 771 |
GT20J341 |
Discrete IGBT |
TOSHIBA |
| 772 |
HAT2016R |
Silicon N Channel Power MOS FET High Speed Power Switching |
Hitachi Semiconductor |
| 773 |
HAT2016R |
Transistors>Switching/MOSFETs |
Renesas |
| 774 |
HAT2016R(D) |
Power switching MOSFET |
Hitachi Semiconductor |
| 775 |
HAT2019R |
Silicon N Channel Power MOS FET High Speed Power Switching |
Hitachi Semiconductor |
| 776 |
HAT2020R |
Silicon N Channel Power MOS FET High Speed Power Switching |
Hitachi Semiconductor |
| 777 |
HAT2020R |
Transistors>Switching/MOSFETs |
Renesas |
| 778 |
HAT2022R |
Silicon N Channel Power MOS FET High Speed Power Switching |
Hitachi Semiconductor |
| 779 |
HAT2022R |
Transistors>Switching/MOSFETs |
Renesas |
| 780 |
HAT2024R |
Silicon N Channel Power MOS FET High Speed Power Switching |
Hitachi Semiconductor |
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