| No. |
Part Name |
Description |
Manufacturer |
| 7591 |
M68AF127BM70MC1U |
1 MBIT (128K X8) 5.0V ASYNCHRONOUS SRAM |
ST Microelectronics |
| 7592 |
M68AF127BM70MC6T |
1 MBIT (128K X8) 5.0V ASYNCHRONOUS SRAM |
ST Microelectronics |
| 7593 |
M68AF127BM70MC6U |
1 MBIT (128K X8) 5.0V ASYNCHRONOUS SRAM |
ST Microelectronics |
| 7594 |
M68AF127BM70N6 |
1 MBIT (128K X8) 5.0V ASYNCHRONOUS SRAM |
ST Microelectronics |
| 7595 |
M68AF127BM70N6T |
1 MBIT (128K X8) 5.0V ASYNCHRONOUS SRAM |
ST Microelectronics |
| 7596 |
M68AF127BM70NK6 |
1 MBIT (128K X8) 5.0V ASYNCHRONOUS SRAM |
ST Microelectronics |
| 7597 |
M68AF511A |
4 MBIT (512K X8) 5.0V ASYNCHRONOUS SRAM |
ST Microelectronics |
| 7598 |
M68AF511AL |
4 MBIT (512K X8) 5.0V ASYNCHRONOUS SRAM |
SGS Thomson Microelectronics |
| 7599 |
M68AF511AM70MC1U |
4 MBIT (512K X8) 5.0V ASYNCHRONOUS SRAM |
ST Microelectronics |
| 7600 |
M68AF511AM70MC6T |
4 MBIT (512K X8) 5.0V ASYNCHRONOUS SRAM |
ST Microelectronics |
| 7601 |
M68AF511AM70MC6U |
4 MBIT (512K X8) 5.0V ASYNCHRONOUS SRAM |
ST Microelectronics |
| 7602 |
M68AF511AM70NC6 |
4 MBIT (512K X8) 5.0V ASYNCHRONOUS SRAM |
ST Microelectronics |
| 7603 |
M68AF511AM70NC6T |
4 MBIT (512K X8) 5.0V ASYNCHRONOUS SRAM |
ST Microelectronics |
| 7604 |
MAX20-100.0C |
100.00V; 5.0A ;20000W peak pulse power; high current transient voltage suppressor (TVS) diode. For bipolar applications |
MDE Semiconductor |
| 7605 |
MAX20-100.0CA |
100.00V; 5.0A ;20000W peak pulse power; high current transient voltage suppressor (TVS) diode. For bipolar applications |
MDE Semiconductor |
| 7606 |
MAX20-110.0C |
110.00V; 5.0A ;20000W peak pulse power; high current transient voltage suppressor (TVS) diode. For bipolar applications |
MDE Semiconductor |
| 7607 |
MAX20-110.0CA |
110.00V; 5.0A ;20000W peak pulse power; high current transient voltage suppressor (TVS) diode. For bipolar applications |
MDE Semiconductor |
| 7608 |
MAX20-120.0C |
120.00V; 5.0A ;20000W peak pulse power; high current transient voltage suppressor (TVS) diode. For bipolar applications |
MDE Semiconductor |
| 7609 |
MAX20-120.0CA |
120.00V; 5.0A ;20000W peak pulse power; high current transient voltage suppressor (TVS) diode. For bipolar applications |
MDE Semiconductor |
| 7610 |
MAX20-130.0C |
130.00V; 5.0A ;20000W peak pulse power; high current transient voltage suppressor (TVS) diode. For bipolar applications |
MDE Semiconductor |
| 7611 |
MAX20-130.0CA |
130.00V; 5.0A ;20000W peak pulse power; high current transient voltage suppressor (TVS) diode. For bipolar applications |
MDE Semiconductor |
| 7612 |
MAX20-150.0C |
150.00V; 5.0A ;20000W peak pulse power; high current transient voltage suppressor (TVS) diode. For bipolar applications |
MDE Semiconductor |
| 7613 |
MAX20-150.0CA |
150.00V; 5.0A ;20000W peak pulse power; high current transient voltage suppressor (TVS) diode. For bipolar applications |
MDE Semiconductor |
| 7614 |
MAX40-100.0C |
100.00V; 5.0A ;40000W peak pulse power; high current transient voltage suppressor (TVS) diode. For bipolar applications |
MDE Semiconductor |
| 7615 |
MAX40-100.0CA |
100.00V; 5.0A ;40000W peak pulse power; high current transient voltage suppressor (TVS) diode. For bipolar applications |
MDE Semiconductor |
| 7616 |
MAX40-110.0C |
110.00V; 5.0A ;40000W peak pulse power; high current transient voltage suppressor (TVS) diode. For bipolar applications |
MDE Semiconductor |
| 7617 |
MAX40-110.0CA |
110.00V; 5.0A ;40000W peak pulse power; high current transient voltage suppressor (TVS) diode. For bipolar applications |
MDE Semiconductor |
| 7618 |
MAX40-130.0C |
130.00V; 5.0A ;40000W peak pulse power; high current transient voltage suppressor (TVS) diode. For bipolar applications |
MDE Semiconductor |
| 7619 |
MAX40-130.0CA |
130.00V; 5.0A ;40000W peak pulse power; high current transient voltage suppressor (TVS) diode. For bipolar applications |
MDE Semiconductor |
| 7620 |
MAX40-140.0C |
140.00V; 5.0A ;40000W peak pulse power; high current transient voltage suppressor (TVS) diode. For bipolar applications |
MDE Semiconductor |
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