No. |
Part Name |
Description |
Manufacturer |
7771 |
MAX6728KAZID3-T |
Vcc1: 2.313 V, Vcc2: 1.388 V, active timeout period: 140 ms-280 ms, dual/triple ultra-low-voltage SOT23 mP supervisor circuit |
MAXIM - Dallas Semiconductor |
7772 |
MAX6728KAZWD3-T |
Vcc1: 2.313 V, Vcc2: 1.665 V, active timeout period: 140 ms-280 ms, dual/triple ultra-low-voltage SOT23 mP supervisor circuit |
MAXIM - Dallas Semiconductor |
7773 |
MAX6729KALTD3-T |
Vcc1: 4.625 V,Vcc2: 3.075 V, active timeout period: 140 ms-280 ms, dual/triple ultra-low-voltage SOT23 mP supervisor circuit |
MAXIM - Dallas Semiconductor |
7774 |
MAX6729KAMRD3-T |
Vcc1: 4.375 V, Vcc2: 2.625 V, active timeout period: 140 ms-280 ms, dual/triple ultra-low-voltage SOT23 mP supervisor circuit |
MAXIM - Dallas Semiconductor |
7775 |
MAX6729KAMSD3-T |
Vcc1: 4.375 V,Vcc2: 2.925 V, active timeout period: 140 ms-280 ms, dual/triple ultra-low-voltage SOT23 mP supervisor circuit |
MAXIM - Dallas Semiconductor |
7776 |
MAX6729KARDD3-T |
Vcc1: 2.625 V, Vcc2: 0.788 V, active timeout period: 140 ms-280 ms, dual/triple ultra-low-voltage SOT23 mP supervisor circuit |
MAXIM - Dallas Semiconductor |
7777 |
MAX6729KARHD3-T |
Vcc1: 2.625 V, Vcc2: 1.313 V, active timeout period: 140 ms-280 ms, dual/triple ultra-low-voltage SOT23 mP supervisor circuit |
MAXIM - Dallas Semiconductor |
7778 |
MAX6729KARVD3-T |
Vcc1: 2.625 V, Vcc2: 1.575 V, active timeout period: 140 ms-280 ms, dual/triple ultra-low-voltage SOT23 mP supervisor circuit |
MAXIM - Dallas Semiconductor |
7779 |
MAX6729KARYD3-T |
Vcc1: 2.625 V, Vcc2: 2.188 V, active timeout period: 140 ms-280 ms, dual/triple ultra-low-voltage SOT23 mP supervisor circuit |
MAXIM - Dallas Semiconductor |
7780 |
MAX6729KASDD3-T |
Vcc1: 2.925 V, Vcc2: 0.788 V, active timeout period: 140 ms-280 ms, dual/triple ultra-low-voltage SOT23 mP supervisor circuit |
MAXIM - Dallas Semiconductor |
7781 |
MAX6729KASFD3-T |
Vcc1: 2.925 V, Vcc2: 1.050 V, active timeout period: 140 ms-280 ms, dual/triple ultra-low-voltage SOT23 mP supervisor circuit |
MAXIM - Dallas Semiconductor |
7782 |
MAX6729KASHD3-T |
Vcc1: 2.925 V, Vcc2: 1.313 V, active timeout period: 140 ms-280 ms, dual/triple ultra-low-voltage SOT23 mP supervisor circuit |
MAXIM - Dallas Semiconductor |
7783 |
MAX6729KASVD3-T |
Vcc1: 2.925 V, Vcc2: 1.575 V, active timeout period: 140 ms-280 ms, dual/triple ultra-low-voltage SOT23 mP supervisor circuit |
MAXIM - Dallas Semiconductor |
7784 |
MAX6729KASYD3-T |
Vcc1: 2.925 V, Vcc2: 2.188 V, active timeout period: 140 ms-280 ms, dual/triple ultra-low-voltage SOT23 mP supervisor circuit |
MAXIM - Dallas Semiconductor |
7785 |
MAX6729KATED3-T |
Vcc1: 3.075 V, Vcc2: 0.833 V, active timeout period: 140 ms-280 ms, dual/triple ultra-low-voltage SOT23 mP supervisor circuit |
MAXIM - Dallas Semiconductor |
7786 |
MAX6729KATGD3-T |
Vcc1: 3.075 V, Vcc2: 1.110 V, active timeout period: 140 ms-280 ms, dual/triple ultra-low-voltage SOT23 mP supervisor circuit |
MAXIM - Dallas Semiconductor |
7787 |
MAX6729KATID3-T |
Vcc1: 3.075 V, Vcc2: 1.388 V, active timeout period: 140 ms-280 ms, dual/triple ultra-low-voltage SOT23 mP supervisor circuit |
MAXIM - Dallas Semiconductor |
7788 |
MAX6729KATWD3-T |
Vcc1: 3.075 V, Vcc2: 1.665 V, active timeout period: 140 ms-280 ms, dual/triple ultra-low-voltage SOT23 mP supervisor circuit |
MAXIM - Dallas Semiconductor |
7789 |
MAX6729KATZD3-T |
Vcc1: 3.075 V, Vcc2: 2.313 V, active timeout period: 140 ms-280 ms, dual/triple ultra-low-voltage SOT23 mP supervisor circuit |
MAXIM - Dallas Semiconductor |
7790 |
MAX6729KAVDD3-T |
Vcc1: 1.575 V, Vcc2: 0.788 V, active timeout period: 140 ms-280 ms, dual/triple ultra-low-voltage SOT23 mP supervisor circuit |
MAXIM - Dallas Semiconductor |
7791 |
MAX6729KAVFD3-T |
Vcc1: 1.575 V, Vcc2: 1.050 V, active timeout period: 140 ms-280 ms, dual/triple ultra-low-voltage SOT23 mP supervisor circuit |
MAXIM - Dallas Semiconductor |
7792 |
MAX6729KAVHD3-T |
Vcc1: 1.575 V, Vcc2: 1.313 V, active timeout period: 140 ms-280 ms, dual/triple ultra-low-voltage SOT23 mP supervisor circuit |
MAXIM - Dallas Semiconductor |
7793 |
MAX6729KAWED3-T |
Vcc1: 1.665 V, Vcc2: 0.883 V, active timeout period: 140 ms-280 ms, dual/triple ultra-low-voltage SOT23 mP supervisor circuit |
MAXIM - Dallas Semiconductor |
7794 |
MAX6729KAWGD3-T |
Vcc1: 1.665 V, Vcc2: 1.110 V, active timeout period: 140 ms-280 ms, dual/triple ultra-low-voltage SOT23 mP supervisor circuit |
MAXIM - Dallas Semiconductor |
7795 |
MAX6729KAWID3-T |
Vcc1: 1.665 V, Vcc2: 1.388 V, active timeout period: 140 ms-280 ms, dual/triple ultra-low-voltage SOT23 mP supervisor circuit |
MAXIM - Dallas Semiconductor |
7796 |
MAX6729KAYDD3-T |
Vcc1: 2.188 V, Vcc2: 0.788 V, active timeout period: 140 ms-280 ms, dual/triple ultra-low-voltage SOT23 mP supervisor circuit |
MAXIM - Dallas Semiconductor |
7797 |
MAX6729KAYFD3-T |
Vcc1: 2.188 V, Vcc2: 1.050 V, active timeout period: 140 ms-280 ms, dual/triple ultra-low-voltage SOT23 mP supervisor circuit |
MAXIM - Dallas Semiconductor |
7798 |
MAX6729KAYHD3-T |
Vcc1: 2.188 V, Vcc2: 1.313 V, active timeout period: 140 ms-280 ms, dual/triple ultra-low-voltage SOT23 mP supervisor circuit |
MAXIM - Dallas Semiconductor |
7799 |
MAX6729KAYVD3-T |
Vcc1: 2.188 V, Vcc2: 1.575 V, active timeout period: 140 ms-280 ms, dual/triple ultra-low-voltage SOT23 mP supervisor circuit |
MAXIM - Dallas Semiconductor |
7800 |
MAX6729KAZED3-T |
Vcc1: 2.313 V, Vcc2: 0.833 V, active timeout period: 140 ms-280 ms, dual/triple ultra-low-voltage SOT23 mP supervisor circuit |
MAXIM - Dallas Semiconductor |
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