No. |
Part Name |
Description |
Manufacturer |
7801 |
1S756H |
Silicon Difused Junction, Zener Diode Vz=5.2...6.4 , intended for use in Stabilized Power Source |
Hitachi Semiconductor |
7802 |
1S757H |
Silicon Difused Junction, Zener Diode Vz=6.2...8.0 , intended for use in Stabilized Power Source |
Hitachi Semiconductor |
7803 |
1S758H |
Silicon Difused Junction, Zener Diode Vz=7.5...10.0 , intended for use in Stabilized Power Source |
Hitachi Semiconductor |
7804 |
1S759H |
Silicon Difused Junction, Zener Diode Vz=9.0...12.0 , intended for use in Stabilized Power Source |
Hitachi Semiconductor |
7805 |
1S760H |
Silicon Difused Junction, Zener Diode Vz=11.0...14.5 , intended for use in Stabilized Power Source |
Hitachi Semiconductor |
7806 |
1S761H |
Silicon Difused Junction, Zener Diode Vz=13.5...18.0 , intended for use in Stabilized Power Source |
Hitachi Semiconductor |
7807 |
1S762H |
Silicon Difused Junction, Zener Diode Vz=17.0...21.0 , intended for use in Stabilized Power Source |
Hitachi Semiconductor |
7808 |
1S763H |
Silicon Difused Junction, Zener Diode Vz=20.0...27.0 , intended for use in Stabilized Power Source |
Hitachi Semiconductor |
7809 |
1S764H |
Silicon Difused Junction, Zener Diode Vz=25.0...32.0 , intended for use in Stabilized Power Source |
Hitachi Semiconductor |
7810 |
1S765H |
Silicon Difused Junction, Zener Diode Vz=30.0...39.0 , intended for use in Stabilized Power Source |
Hitachi Semiconductor |
7811 |
1S920 |
Glass passivated silicon diode with high-break-off voltage for general purpoe application |
Texas Instruments |
7812 |
1S920 |
Glass passivated silicon diode with high breaking voltage |
Texas Instruments |
7813 |
1S921 |
Glass passivated silicon diode with high-break-off voltage for general purpoe application |
Texas Instruments |
7814 |
1S921 |
Glass passivated silicon diode with high breaking voltage |
Texas Instruments |
7815 |
1S922 |
Glass passivated silicon diode with high-break-off voltage for general purpoe application |
Texas Instruments |
7816 |
1S922 |
Glass passivated silicon diode with high breaking voltage |
Texas Instruments |
7817 |
1S923 |
Glass passivated silicon diode with high-break-off voltage for general purpoe application |
Texas Instruments |
7818 |
1S923 |
Glass passivated silicon diode with high breaking voltage |
Texas Instruments |
7819 |
1SMA4737 |
Discrete Devices -Diode-Zener Diode & Array |
Taiwan Semiconductor |
7820 |
1SMA4738 |
Discrete Devices -Diode-Zener Diode & Array |
Taiwan Semiconductor |
7821 |
1SMA4739 |
Discrete Devices -Diode-Zener Diode & Array |
Taiwan Semiconductor |
7822 |
1SMA4740 |
Discrete Devices -Diode-Zener Diode & Array |
Taiwan Semiconductor |
7823 |
1SMA4741 |
Discrete Devices -Diode-Zener Diode & Array |
Taiwan Semiconductor |
7824 |
1SMA4742 |
Discrete Devices -Diode-Zener Diode & Array |
Taiwan Semiconductor |
7825 |
1SMA4743 |
Discrete Devices -Diode-Zener Diode & Array |
Taiwan Semiconductor |
7826 |
1SMA4744 |
Discrete Devices -Diode-Zener Diode & Array |
Taiwan Semiconductor |
7827 |
1SMA4745 |
Discrete Devices -Diode-Zener Diode & Array |
Taiwan Semiconductor |
7828 |
1SMA4746 |
Discrete Devices -Diode-Zener Diode & Array |
Taiwan Semiconductor |
7829 |
1SMA4747 |
Discrete Devices -Diode-Zener Diode & Array |
Taiwan Semiconductor |
7830 |
1SMA4748 |
Discrete Devices -Diode-Zener Diode & Array |
Taiwan Semiconductor |
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