| No. |
Part Name |
Description |
Manufacturer |
| 781 |
2N3705 |
SILICON GENERAL PURPOSE AF TRANSISTORS |
Micro Electronics |
| 782 |
2N3705 |
Silicon NPN Transistor |
Motorola |
| 783 |
2N3705 |
NPN Transistor - General Purpose AMPS and Switches |
National Semiconductor |
| 784 |
2N3705 |
NPN Silicon Transistor |
Texas Instruments |
| 785 |
2N3805 |
DUAL PNP Transistor General Purpose |
Amelco Semiconductor |
| 786 |
2N3805 |
Dual PNP silicon transistor designed for differential amplifier applications, TO-71 case |
Motorola |
| 787 |
2N3805 |
Silicon PNP Transistor |
Motorola |
| 788 |
2N3905 |
Leaded Small Signal Transistor General Purpose |
Central Semiconductor |
| 789 |
2N3905 |
0.625W General Purpose PNP Plastic Leaded Transistor. 40V Vceo, 0.200A Ic, 30 - hFE |
Continental Device India Limited |
| 790 |
2N3905 |
Si-Epitaxial PlanarTransistors |
Diotec Elektronische |
| 791 |
2N3905 |
PNP General Purpose Amplifier |
Fairchild Semiconductor |
| 792 |
2N3905 |
Low Noise PNP Transistor |
FERRANTI |
| 793 |
2N3905 |
Switching PNP transistor |
FERRANTI |
| 794 |
2N3905 |
Planar epitaxial PNP silicon transistor. -40V, 200mA. |
General Electric Solid State |
| 795 |
2N3905 |
PNP Silicon Epitaxial Planar Transistor |
Honey Technology |
| 796 |
2N3905 |
PNP silicon general purpose switching and amplifier transistor |
ITT Semiconductors |
| 797 |
2N3905 |
PNP SILICON PLANAR EPITAXIAL TRANSISTORS |
Micro Electronics |
| 798 |
2N3905 |
PNP silicon annular transistor, TO-92 case |
Motorola |
| 799 |
2N3905 |
Silicon PNP Transistor |
Motorola |
| 800 |
2N3905 |
PNP Transistor - General Purpose AMPS and Switches |
National Semiconductor |
| 801 |
2N3905 |
PNP Silicon Transistor |
NEC |
| 802 |
2N3905 |
General Purpose Transistors(PNP Silicon) |
ON Semiconductor |
| 803 |
2N3905 |
PNP EPITAXIAL SILICON TRANSISTOR |
Samsung Electronic |
| 804 |
2N3905 |
NPN Silicon Expitaxial Planar Transistor for switching and amplifier applications |
Semtech |
| 805 |
2N3905 |
Silicon NPN epitaxial transistor (PCT Process) |
TOSHIBA |
| 806 |
2N3905 |
General purpose transistor. Collector-emitter voltage: Vceo = -40V. Collector-base voltage: Vcbo = -40V. Collector dissipation: Pc(max) = -625mW. |
USHA India LTD |
| 807 |
2N4005 |
Silicon NPN Transistor |
Motorola |
| 808 |
2N405 |
Germanium PNP Transistor |
Motorola |
| 809 |
2N4305 |
Silicon NPN Transistor |
Motorola |
| 810 |
2N4305 |
Trans GP BJT NPN 80V 5A 3-Pin TO-5 |
New Jersey Semiconductor |
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