| No. |
Part Name |
Description |
Manufacturer |
| 781 |
SA100A |
100.00V; 1mA ;500W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications |
MDE Semiconductor |
| 782 |
SA110 |
110.00V; 1mA ;500W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications |
MDE Semiconductor |
| 783 |
SA110A |
110.00V; 1mA ;500W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications |
MDE Semiconductor |
| 784 |
SA120 |
120.00V; 1mA ;500W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications |
MDE Semiconductor |
| 785 |
SA120A |
120.00V; 1mA ;500W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications |
MDE Semiconductor |
| 786 |
SA130 |
130.00V; 1mA ;500W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications |
MDE Semiconductor |
| 787 |
SA130A |
130.00V; 1mA ;500W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications |
MDE Semiconductor |
| 788 |
SA150 |
150.00V; 1mA ;500W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications |
MDE Semiconductor |
| 789 |
SA150A |
150.00V; 1mA ;500W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications |
MDE Semiconductor |
| 790 |
SA160 |
160.00V; 1mA ;500W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications |
MDE Semiconductor |
| 791 |
SA160A |
160.00V; 1mA ;500W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications |
MDE Semiconductor |
| 792 |
SA170 |
170.00V; 1mA ;500W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications |
MDE Semiconductor |
| 793 |
SA170A |
170.00V; 1mA ;500W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications |
MDE Semiconductor |
| 794 |
SA180 |
180.00V; 1mA ;500W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications |
MDE Semiconductor |
| 795 |
SA180A |
180.00V; 1mA ;500W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications |
MDE Semiconductor |
| 796 |
SCI7661MAA |
DC-DC converter, 95% Typical Power Efficiency |
Epson Company |
| 797 |
SMAJ100 |
100.00V; 1mA ;400W peak pulse power; surface mount transient transient voltage suppressor. For bipolar applications |
MDE Semiconductor |
| 798 |
SMAJ100A |
100.00V; 1mA ;400W peak pulse power; surface mount transient transient voltage suppressor. For bipolar applications |
MDE Semiconductor |
| 799 |
SMAJ110 |
110.00V; 1mA ;400W peak pulse power; surface mount transient transient voltage suppressor. For bipolar applications |
MDE Semiconductor |
| 800 |
SMAJ110A |
110.00V; 1mA ;400W peak pulse power; surface mount transient transient voltage suppressor. For bipolar applications |
MDE Semiconductor |
| 801 |
SMAJ120 |
120.00V; 1mA ;400W peak pulse power; surface mount transient transient voltage suppressor. For bipolar applications |
MDE Semiconductor |
| 802 |
SMAJ120A |
120.00V; 1mA ;400W peak pulse power; surface mount transient transient voltage suppressor. For bipolar applications |
MDE Semiconductor |
| 803 |
SMAJ130 |
130.00V; 1mA ;400W peak pulse power; surface mount transient transient voltage suppressor. For bipolar applications |
MDE Semiconductor |
| 804 |
SMAJ130A |
130.00V; 1mA ;400W peak pulse power; surface mount transient transient voltage suppressor. For bipolar applications |
MDE Semiconductor |
| 805 |
SMAJ150 |
150.00V; 1mA ;400W peak pulse power; surface mount transient transient voltage suppressor. For bipolar applications |
MDE Semiconductor |
| 806 |
SMAJ150A |
150.00V; 1mA ;400W peak pulse power; surface mount transient transient voltage suppressor. For bipolar applications |
MDE Semiconductor |
| 807 |
SMAJ160 |
160.00V; 1mA ;400W peak pulse power; surface mount transient transient voltage suppressor. For bipolar applications |
MDE Semiconductor |
| 808 |
SMAJ160A |
160.00V; 1mA ;400W peak pulse power; surface mount transient transient voltage suppressor. For bipolar applications |
MDE Semiconductor |
| 809 |
SMAJ170 |
170.00V; 1mA ;400W peak pulse power; surface mount transient transient voltage suppressor. For bipolar applications |
MDE Semiconductor |
| 810 |
SMAJ170A |
170.00V; 1mA ;400W peak pulse power; surface mount transient transient voltage suppressor. For bipolar applications |
MDE Semiconductor |
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