No. |
Part Name |
Description |
Manufacturer |
781 |
NTHS5404 |
Power MOSFET 20V, 5.2A, N-Channel ChipFET8482; |
ON Semiconductor |
782 |
NTHS5404T1 |
Power MOSFET 20V, 5.2A, N-Channel ChipFET8482; |
ON Semiconductor |
783 |
NTHS5404T1 |
Power MOSFET 20V, 5.2A, N-Channel ChipFET8482; |
ON Semiconductor |
784 |
NTHS5404T1G |
Power MOSFET 20V, 5.2A, N-Channel ChipFET8482; |
ON Semiconductor |
785 |
NTHS5404T1G |
Power MOSFET 20V, 5.2A, N-Channel ChipFET8482; |
ON Semiconductor |
786 |
NTHS5441T1 |
Power MOSFET P-Channel ChipFET8482; -3.9 A, -20 V |
ON Semiconductor |
787 |
NTHS5441T1 |
Power MOSFET P-Channel ChipFET8482; -3.9 A, -20 V |
ON Semiconductor |
788 |
NTHS5441T1G |
Power MOSFET P-Channel ChipFET8482; -3.9 A, -20 V |
ON Semiconductor |
789 |
NTHS5441T1G |
Power MOSFET P-Channel ChipFET8482; -3.9 A, -20 V |
ON Semiconductor |
790 |
NTHS5443 |
Power MOSFET 20V, 3.6A, P-Channel ChipFET8482; |
ON Semiconductor |
791 |
NTHS5443 |
Power MOSFET 20V, 3.6A, P-Channel ChipFET8482; |
ON Semiconductor |
792 |
NTHS5443T1 |
Power MOSFET 20V, 3.6A, P-Channel ChipFET8482; |
ON Semiconductor |
793 |
NTHS5443T1 |
Power MOSFET 20V, 3.6A, P-Channel ChipFET8482; |
ON Semiconductor |
794 |
NTHS5443T1G |
Power MOSFET 20V, 3.6A, P-Channel ChipFET8482; |
ON Semiconductor |
795 |
NTHS5443T1G |
Power MOSFET 20V, 3.6A, P-Channel ChipFET8482; |
ON Semiconductor |
796 |
NTHS5445 |
Power MOSFET 8 V, 5.2 A, P-Channel ChipFET8482; |
ON Semiconductor |
797 |
NTHS5445 |
Power MOSFET 8 V, 5.2 A, P-Channel ChipFET8482; |
ON Semiconductor |
798 |
NTHS5445T1 |
OBSOLETE - Power MOSFET P-Channel ChipFET8482; |
ON Semiconductor |
799 |
NTLJD2105L |
Power MOSFET, 8 V, 4.3 A, µCool8482; High Side Load Switch with Level Shift |
ON Semiconductor |
800 |
NTLJD3181PZ |
Power MOSFET, −20 V, −4.0 A, uCool8482;, Dual P−Channel, ESD, 2x2 mm WDFN Package |
ON Semiconductor |
801 |
NTLJD4150P |
Power MOSFET 30 V, 3.4 A, µCool8482; Dual P-Channel |
ON Semiconductor |
802 |
NTLJF3118N |
Power MOSFET and Schottky Diode 20 V, 4.6 A, µCool8482; N-Channel, with 2.0 A Schottky Barrier Diode |
ON Semiconductor |
803 |
NTLJS4149 |
NTLJS4149P µCool8482; |
ON Semiconductor |
804 |
NTLJS4159N |
Power MOSFET 30 V, 7.8 A, µCool8482; Single N-Channel |
ON Semiconductor |
805 |
NTLTD7900N |
Power MOSFET 8.5 A, 20 V Logic Level N-Channel Micro88482; Leadless |
ON Semiconductor |
806 |
NTLUS4195PZ |
Power MOSFET, -30 V, -4 A, µCool8482; Single P-Channel, ESD, 1.6 x 1.6 x 0.55 mm UDFN Package |
ON Semiconductor |
807 |
NTMSD3P303 |
FETKY8482; P-Channel Enhancement-Mode Power MOSFET and Schottky Diode Dual SO-8 Package |
ON Semiconductor |
808 |
NTMSD3P303R2 |
FETKY8482; P-Channel Enhancement-Mode Power MOSFET and Schottky Diode Dual SO-8 Package |
ON Semiconductor |
809 |
NUS3116MT |
Main Switch Power MOSFET -12 V, -6.2 A, µCool8482; Single P-Channel with Dual PNP Low Vce(sat) Transistors, 3x3 mm WDFN Package |
ON Semiconductor |
810 |
P3P623S00 |
TIMING-SAFE 8482 Peak EMI Reduction IC |
ON Semiconductor |
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