No. |
Part Name |
Description |
Manufacturer |
781 |
GS88436B-166 |
166MHz 8.5ns 256K x 36 8Mb S/DCD sync burst SRAM |
GSI Technology |
782 |
GS88436B-166I |
166MHz 8.5ns 256K x 36 8Mb S/DCD sync burst SRAM |
GSI Technology |
783 |
GS88436B-180 |
180MHz 8ns 256K x 36 8Mb S/DCD sync burst SRAM |
GSI Technology |
784 |
GS88436B-180I |
180MHz 8ns 256K x 36 8Mb S/DCD sync burst SRAM |
GSI Technology |
785 |
GS88436B-200 |
200MHz 7.5ns 256K x 36 8Mb S/DCD sync burst SRAM |
GSI Technology |
786 |
GS88436B-200I |
200MHz 7.5ns 256K x 36 8Mb S/DCD sync burst SRAM |
GSI Technology |
787 |
HY57V281620ELT |
128Mb Synchronous DRAM based on 2M x 4Bank x16 I/O |
Hynix Semiconductor |
788 |
HY57V281620ELT-5 |
128Mb Synchronous DRAM based on 2M x 4Bank x16 I/O |
Hynix Semiconductor |
789 |
HY57V281620ELT-6 |
128Mb Synchronous DRAM based on 2M x 4Bank x16 I/O |
Hynix Semiconductor |
790 |
HY57V281620ELT-7 |
128Mb Synchronous DRAM based on 2M x 4Bank x16 I/O |
Hynix Semiconductor |
791 |
HY57V281620ELT-H |
128Mb Synchronous DRAM based on 2M x 4Bank x16 I/O |
Hynix Semiconductor |
792 |
HY57V281620ELTP-6 |
128Mb Synchronous DRAM based on 2M x 4Bank x16 I/O |
Hynix Semiconductor |
793 |
HY57V281620ELTP-7 |
128Mb Synchronous DRAM based on 2M x 4Bank x16 I/O |
Hynix Semiconductor |
794 |
HY57V281620ELTP-H |
128Mb Synchronous DRAM based on 2M x 4Bank x16 I/O |
Hynix Semiconductor |
795 |
HY57V281620ET-5 |
128Mb Synchronous DRAM based on 2M x 4Bank x16 I/O |
Hynix Semiconductor |
796 |
HY57V281620ET-6 |
128Mb Synchronous DRAM based on 2M x 4Bank x16 I/O |
Hynix Semiconductor |
797 |
HY57V281620ET-7 |
128Mb Synchronous DRAM based on 2M x 4Bank x16 I/O |
Hynix Semiconductor |
798 |
HY57V281620ET-H |
128Mb Synchronous DRAM based on 2M x 4Bank x16 I/O |
Hynix Semiconductor |
799 |
HY57V281620ETP-5 |
128Mb Synchronous DRAM based on 2M x 4Bank x16 I/O |
Hynix Semiconductor |
800 |
HY57V281620ETP-6 |
128Mb Synchronous DRAM based on 2M x 4Bank x16 I/O |
Hynix Semiconductor |
801 |
HY57V281620ETP-7 |
128Mb Synchronous DRAM based on 2M x 4Bank x16 I/O |
Hynix Semiconductor |
802 |
HY57V281620ETP-H |
128Mb Synchronous DRAM based on 2M x 4Bank x16 I/O |
Hynix Semiconductor |
803 |
HYB25D128160AT-6 |
DDR SDRAM Components - 128Mb (8Mx16) DDR333 (2.5-3-3) |
Infineon |
804 |
HYB25D128160AT-7 |
DDR SDRAM Components - 128Mb (8Mx16) DDR266A (2-3-3) |
Infineon |
805 |
HYB25D128160CE-6 |
DDR SDRAM Components - 128Mb (8Mx16) DDR333 (2.5-3-3); Available 2Q04 |
Infineon |
806 |
HYB25D128400AT-7 |
DDR SDRAM Components - 128Mb (32Mx4) DDR266A (2-3-3) |
Infineon |
807 |
HYB25D128400CE-6 |
DDR SDRAM Components - 128Mb (32Mx4) DDR333 (2.5-3-3); Available 2Q04 |
Infineon |
808 |
HYB25D128800AT-7 |
DDR SDRAM Components - 128Mb (16mx8) DDR266A (2-3-3) |
Infineon |
809 |
HYB25D128800CE-6 |
DDR SDRAM Components - 128Mb (16Mx8) DDR333 (2.5-3-3); Available 2Q04 |
Infineon |
810 |
HYB39S128160CT-7.5 |
SDRAM Components - 128Mb (8Mx16) PC133 3-3-3 |
Infineon |
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