No. |
Part Name |
Description |
Manufacturer |
781 |
HMC455LP3 |
InGaP HBT 1/2 Watt High IP3 AMPLIFIER, 1.7 - 2.5 GHz |
Hittite Microwave Corporation |
782 |
HMC457QS16G |
InGaP HBT 1 WATT POWER AMPLIFIER, 1.7 - 2.2 GHz |
Hittite Microwave Corporation |
783 |
HMC459 |
GaAs PHEMT MMIC POWER AMPLIFIER, DC - 18.0 GHz |
Hittite Microwave Corporation |
784 |
HSMBJSAC45 |
Low Capacitance TVS |
Microsemi |
785 |
HVC45 |
100mA SILICON CARTRIDGE RECTIFIERS |
etc |
786 |
HVC45R |
100mA SILICON CARTRIDGE RECTIFIERS |
etc |
787 |
IMP38C45/D |
BiCMOS Current-Mode PWM Controllers |
IMP Inc |
788 |
IMP38C45EMA |
BiCMOS Current-Mode PWM Controllers |
IMP Inc |
789 |
IMP38C45EPA |
BiCMOS Current-Mode PWM Controllers |
IMP Inc |
790 |
IMP38C45EPD |
BiCMOS Current-Mode PWM Controllers |
IMP Inc |
791 |
IMP38C45ESA |
BiCMOS Current-Mode PWM Controllers |
IMP Inc |
792 |
IMP38C45ESD |
BiCMOS Current-Mode PWM Controllers |
IMP Inc |
793 |
IMP38HC45/D |
BiCMOS Current-Mode PWM Controllers |
IMP Inc |
794 |
IMP38HC45EMA |
BiCMOS Current-Mode PWM Controllers |
IMP Inc |
795 |
IMP38HC45EPA |
BiCMOS Current-Mode PWM Controllers |
IMP Inc |
796 |
IMP38HC45EPD |
BiCMOS Current-Mode PWM Controllers |
IMP Inc |
797 |
IMP38HC45ESA |
BiCMOS Current-Mode PWM Controllers |
IMP Inc |
798 |
IMP38HC45ESD |
BiCMOS Current-Mode PWM Controllers |
IMP Inc |
799 |
IRFC450 |
HIGH VOLTAGE POWER MOSFET DIE |
IXYS Corporation |
800 |
JRC4558 |
= NJM4558 / Dual Operational Amplifier |
New Japan Radio |
801 |
JSFC451 |
Dual AND-OR-INVERT gate |
SESCOSEM |
802 |
JSFC454 |
4 x 2 inputs AND-OR-INVERT gate |
SESCOSEM |
803 |
K4D263238A-GC45 |
1M x 32Bit x 4 Banks Double Data Rate Synchronous DRAM with Bi-directional Data Strobe and DLL |
Samsung Electronic |
804 |
K4D263238E-GC45 |
1M x 32Bit x 4 Banks Graphic Double Data Rate Synchronous DRAM with Bi-directional Data Strobe and DLL |
Samsung Electronic |
805 |
K4D263238M-QC45 |
1M x 32Bit x 4 Banks Double Data Rate Synchronous RAM with Bi-directional Data Strobe and DLL |
Samsung Electronic |
806 |
K4D551638D-TC45 |
256Mbit GDDR SDRAM |
Samsung Electronic |
807 |
K4E641612B-TC45 |
4M x 16bit CMOS dynamic RAM with extended data out, 3.3V power supply, 45ns |
Samsung Electronic |
808 |
K4E641612C-TC45 |
4M x 16bit CMOS Dynamic RAM with Extended Data Out |
Samsung Electronic |
809 |
K4E661612B-TC45 |
4M x 16bit CMOS dynamic RAM with extended data out, 3.3V power supply, 45ns |
Samsung Electronic |
810 |
K4E661612C-TC45 |
4M x 16bit CMOS Dynamic RAM with Extended Data Out |
Samsung Electronic |
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