| No. |
Part Name |
Description |
Manufacturer |
| 781 |
MELFSMA5819 |
Surface mount schottky barrier rectifier. Max reccurent peak reverse voltage 40V. Max RMS voltage 28V. Max DC blocking voltage 40V |
Wing Shing Computer Components |
| 782 |
MHW559 |
Low Noise wideband amplifier module 40-300MHz |
Motorola |
| 783 |
MHW560 |
Low Noise wideband amplifier module 40-300MHz |
Motorola |
| 784 |
MHW561 |
Low distortion wideband amplifier module 40-300MHz |
Motorola |
| 785 |
MHW562 |
Low distortion wideband amplifier module 40-300MHz |
Motorola |
| 786 |
MKT 1818 |
C-values 1000 pF - 4.7 µF, Voltage 40 - 250 VDC, PCM 7 |
Vishay |
| 787 |
MKT 1824 |
C-values 0.01 µF - 1.0 µF, Voltage 40 - 63 VDC, Max. temp. 125°C, High pulse load, Stacked film, SMD |
Vishay |
| 788 |
MKT 1826 |
C-values 1000 pF - 4.7 µF, Voltage 40 - 250 VDC, Max. temp. 125°C, High pulse load, Stacked film, PCM 5 |
Vishay |
| 789 |
MKT 1826-E |
C-values 1000 pF - 4.7 µF, Voltage 40 - 250 VDC, Max. temp. 125°C, High pulse load, Stacked Film, crimped to PCM 10 |
Vishay |
| 790 |
MR2404 |
Diode 400V 24A 2-Pin(2+Tab) Case 339-02 |
New Jersey Semiconductor |
| 791 |
MR2404F |
Diode 400V 24A 2-Pin(2+Tab) Case 339-02 |
New Jersey Semiconductor |
| 792 |
MR2404R |
Diode 400V 24A 2-Pin(2+Tab) Case 339-02 |
New Jersey Semiconductor |
| 793 |
MR2504L |
Diode 400V 25A 2-Pin Case D-6 |
New Jersey Semiconductor |
| 794 |
MUR340 |
Plastic High-Efficiency Rectifiers (Reverse Voltage 400 to 600V Forward Current 3.0A) |
etc |
| 795 |
MUR360 |
Plastic High-Efficiency Rectifiers (Reverse Voltage 400 to 600V Forward Current 3.0A) |
etc |
| 796 |
MX20-1 |
RF Power Module 400-440MHz, 20W 12.5V |
TRW |
| 797 |
NE38018-T1-67 |
GaAs HJ-FET L to S band low noise amplifier. Idss range 40-90 mA. |
NEC |
| 798 |
NSR0140 |
Schottky Diode 40V Low VF Low IR SOD723 |
ON Semiconductor |
| 799 |
NSR0140P2 |
Schottky Diode 40V Low VF Low IR SOD923 |
ON Semiconductor |
| 800 |
NSR1040MW2 |
Scottky diode 40V Low Vf |
ON Semiconductor |
| 801 |
NTE168 |
Single phase bridge rectifier, 2.0 Amp. Max recurrent peak reverse voltage 400 V. Max average forward output current 2 A. |
NTE Electronics |
| 802 |
NTE5802 |
Axial lead standard recovery. Silicon rectifier, 3 amp. Peak repetitive reverse voltage, working peak reverse voltage, DS blocking voltage 200V. Non-repetitive peak reverse voltage 400V |
NTE Electronics |
| 803 |
NTE5814 |
6 Amp. Plastic silicon rectifier. Max recurrent peak reverse voltage 400V. Max RMS voltage 280V. Max average forward rectified current 6A. |
NTE Electronics |
| 804 |
NTE5820 |
Silicon power rectifier. Stud mount, fast recovery, 12 Amp. Peak repetitive reverse voltage 400V. Non-repetitive peak reverse voltage 450V. |
NTE Electronics |
| 805 |
NTE5821 |
Silicon power rectifier. Stud mount, fast recovery, 12 Amp. Peak repetitive reverse voltage 400V. Non-repetitive peak reverse voltage 450V. |
NTE Electronics |
| 806 |
NTE5838 |
Stud mount standart recovery. Silicon rectifier, 3 Amp. Peak repetitive reverse voltage, DC blocking voltage 400V. |
NTE Electronics |
| 807 |
NTE5839 |
Stud mount standart recovery. Silicon rectifier, 3 Amp. Peak repetitive reverse voltage, DC blocking voltage 400V. |
NTE Electronics |
| 808 |
NTE5858 |
Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 400V. Average forward current 6A. |
NTE Electronics |
| 809 |
NTE5859 |
Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 400V. Average forward current 6A. |
NTE Electronics |
| 810 |
NTE5878 |
Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 400V. Average forward current 12A. |
NTE Electronics |
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