| No. |
Part Name |
Description |
Manufacturer |
| 781 |
MAX9955 |
Dual Comparator/Terminator with Cable-Droop Compensation |
MAXIM - Dallas Semiconductor |
| 782 |
MAX9955BDCCB+D |
Dual Comparator/Terminator with Cable-Droop Compensation |
MAXIM - Dallas Semiconductor |
| 783 |
MBRM110E-D |
Surface Mount Schottky Power Rectifier POWERMITE Power Surface Mount Package |
ON Semiconductor |
| 784 |
MBRM120E-D |
Surface Mount Schottky Power Rectifier POWERMITE Power Surface Mount Package |
ON Semiconductor |
| 785 |
MC33195 |
Standard Quad Low Side Pre-driver with Diagnostic |
Motorola |
| 786 |
MC33195DW |
Standard Quad Low Side Pre-driver with Diagnostic |
Motorola |
| 787 |
MC33195P |
Standard Quad Low Side Pre-driver with Diagnostic |
Motorola |
| 788 |
MC33195PDW |
Standard quad low side pre-driver with diagnostic. |
Motorola |
| 789 |
MC33253 |
MC33253 Full Bridge Pre-Driver |
Motorola |
| 790 |
MC33253DW |
5.5 to 50V; 1A; full bridge pre-driver |
Motorola |
| 791 |
MC33883 |
Full Bridge Pre-driver for Power Application |
Freescale (Motorola) |
| 792 |
MC33883 |
MC33883 Full Bridge Pre-Driver |
Motorola |
| 793 |
MDD100N1000 |
100A 1000V Double-Diode Compact Module |
IPRS Baneasa |
| 794 |
MDD100N1200 |
100A 1200V Double-Diode Compact Module |
IPRS Baneasa |
| 795 |
MDD100N1400 |
100A 1400V Double-Diode Compact Module |
IPRS Baneasa |
| 796 |
MDD100N1600 |
100A 1600V Double-Diode Compact Module |
IPRS Baneasa |
| 797 |
MDD100N400 |
100A 400V Double-Diode Compact Module |
IPRS Baneasa |
| 798 |
MDD100N600 |
100A 600V Double-Diode Compact Module |
IPRS Baneasa |
| 799 |
MDD100N800 |
100A 800V Double-Diode Compact Module |
IPRS Baneasa |
| 800 |
MGP11N60E-D |
Insulated Gate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate |
ON Semiconductor |
| 801 |
MGP14N60E-D |
Insulated Gate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate |
ON Semiconductor |
| 802 |
MGP21N60E-D |
Insulated Gate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate |
ON Semiconductor |
| 803 |
MGP4N60E-D |
Insulated Gate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate |
ON Semiconductor |
| 804 |
MGP7N60E-D |
Insulated Gate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate |
ON Semiconductor |
| 805 |
MM8002 |
NPN silicon high-frequency transistor designed for CATV amplifier, suitable for use as output driver or pre-driver stages in VHF and UHF equipment |
Motorola |
| 806 |
MMDF1N05E-D |
Power MOSFET 1 Amp, 50 Volts N-Channel SO-8, Dual |
ON Semiconductor |
| 807 |
MMDF2C02E-D |
Power MOSFET 2.5 Amps, 25 Volts Complementary SO-8, Dual |
ON Semiconductor |
| 808 |
MMDF2N02E-D |
Power MOSFET 2 Amps, 25 Volts N-Channel SO-8, Dual |
ON Semiconductor |
| 809 |
MMDF2P02E-D |
Power MOSFET 2 Amps, 25 Volts P-Channel SO-8, Dual |
ON Semiconductor |
| 810 |
MMFT2955E-D |
Power MOSFET 1 Amp, 60 Volts P-Channel SOT-223 |
ON Semiconductor |
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