| No. |
Part Name |
Description |
Manufacturer |
| 781 |
2N3715 |
80V Epitaxial-base NPN-PNP |
Comset Semiconductors |
| 782 |
2N3715 |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
| 783 |
2N3716 |
100V Epitaxial-base NPN-PNP |
Comset Semiconductors |
| 784 |
2N3716 |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
| 785 |
2N3724 |
High speed NPN silicon planar epitaxial High-Voltage, High-Current Transistor |
ITT Semiconductors |
| 786 |
2N3725 |
High speed NPN silicon planar epitaxial High-Voltage, High-Current Transistor |
ITT Semiconductors |
| 787 |
2N3740 |
PNP Power Transistor Epitaxial-Base - LF amplifier and switching |
SESCOSEM |
| 788 |
2N3741 |
PNP Power Transistor Epitaxial-Base - LF amplifier and switching |
SESCOSEM |
| 789 |
2N3783 |
PNP germanium epitaxial mesa transistor |
Motorola |
| 790 |
2N3784 |
PNP germanium epitaxial mesa transistor |
Motorola |
| 791 |
2N3785 |
PNP germanium epitaxial mesa transistor |
Motorola |
| 792 |
2N3789 |
80V Epitaxial-base NPN-PNP |
Comset Semiconductors |
| 793 |
2N3789 |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
| 794 |
2N3790 |
100V Epitaxial-base NPN-PNP |
Comset Semiconductors |
| 795 |
2N3790 |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
| 796 |
2N3791 |
80V Epitaxial-base NPN-PNP |
Comset Semiconductors |
| 797 |
2N3791 |
Silicon P-N-P epitaxial-base high power transistor. -60V, 150W. |
General Electric Solid State |
| 798 |
2N3791 |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
| 799 |
2N3792 |
100V Epitaxial-base NPN-PNP |
Comset Semiconductors |
| 800 |
2N3792 |
Silicon P-N-P epitaxial-base high power transistor. -80V, 150W. |
General Electric Solid State |
| 801 |
2N3792 |
PNP SILICON EPITAXIAL BASE POWER TANSISTORS |
SemeLAB |
| 802 |
2N3792 |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
| 803 |
2N3839 |
Silicon NPN Epitaxial Planar RF Transistor |
RCA Solid State |
| 804 |
2N3839 |
Epitaxial planar NPN transistor intended for amplifier, oscillator and converter applications up to 500MHz, low noise |
SGS-ATES |
| 805 |
2N3859 |
Planar epitaxial passivated NPN silicon transistor. 30V, 100mA. |
General Electric Solid State |
| 806 |
2N3859A |
Planar epitaxial passivated NPN silicon transistor. 60V, 100mA. |
General Electric Solid State |
| 807 |
2N3860 |
Planar epitaxial passivated NPN silicon transistor. 30V, 100mA. |
General Electric Solid State |
| 808 |
2N3862 |
Silicon Planar Epitaxial Logic NPN Transistor |
Transitron Electronic |
| 809 |
2N3866 |
Silicon NPN epitaxial planar transistor for VHF and UHF power stages, oscillator stages and driver stages |
AEG-TELEFUNKEN |
| 810 |
2N3866 |
Silicon NPN overlay epitaxial planar RF transistor |
ICCE |
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