| No. |
Part Name |
Description |
Manufacturer |
| 781 |
TPS2330PW |
SINGLE HOT SWAP POWER CONTROLLER WITH CIRCUIT BREAKER AND POWER-GOOD REPORTING |
Texas Instruments |
| 782 |
TPS2331 |
3-13V Single Hot-Swap IC w/ Power Good Report, Act-High Enable |
Texas Instruments |
| 783 |
TPS2331D |
SINGLE HOT SWAP POWER CONTROLLER WITH CIRCUIT BREAKER AND POWER-GOOD REPORTING |
Texas Instruments |
| 784 |
TPS2331ID |
3-13V Single Hot-Swap IC w/ Power Good Report, Act-High Enable |
Texas Instruments |
| 785 |
TPS2331IDR |
3-13V Single Hot-Swap IC w/ Power Good Report, Act-High Enable |
Texas Instruments |
| 786 |
TPS2331IDRG4 |
3-13V Single Hot-Swap IC w/ Power Good Report, Act-High Enable 14-SOIC -40 to 85 |
Texas Instruments |
| 787 |
TPS2331IPW |
3-13V Single Hot-Swap IC w/ Power Good Report, Act-High Enable |
Texas Instruments |
| 788 |
TPS2331IPWG4 |
3-13V Single Hot-Swap IC w/ Power Good Report, Act-High Enable 14-TSSOP -40 to 85 |
Texas Instruments |
| 789 |
TPS2331IPWR |
3-13V Single Hot-Swap IC w/ Power Good Report, Act-High Enable |
Texas Instruments |
| 790 |
TPS2331IPWRG4 |
3-13V Single Hot-Swap IC w/ Power Good Report, Act-High Enable 14-TSSOP -40 to 85 |
Texas Instruments |
| 791 |
TPS2331PW |
SINGLE HOT SWAP POWER CONTROLLER WITH CIRCUIT BREAKER AND POWER-GOOD REPORTING |
Texas Instruments |
| 792 |
TR, TD |
High Voltage Resistors and Dividers, Outstanding Stability under Adverse Conditions, Stable Cermet Resistive Element Bonded to a High-Purity Alumina Substrate, Tough Epoxy-based Coating and High Voltage Stability |
Vishay |
| 793 |
UC285-X |
FAST TRANSIENT REPONSE 5-A LOW-DROPOUT REGULATOR |
Texas Instruments |
| 794 |
UC385-X |
FAST TRANSIENT REPONSE 5-A LOW-DROPOUT REGULATOR |
Texas Instruments |
| 795 |
UPD7720AC |
QUARTERLY MICROPROCESSOR/MICROCOMPUTER RELIABILITY REPORT |
NEC |
| 796 |
VE08X |
EPOXY BRIDGE RECTIFIERS |
New Jersey Semiconductor |
| 797 |
VE13 |
Epoxy Dipped Zinc Oxide Varistors |
SGS Thomson Microelectronics |
| 798 |
VK648 |
Epoxy Bridge Rectifiers |
EBR |
| 799 |
VK648 |
30 Amp Epoxy Vridge Rectifiers |
Micro Quality Semiconductor |
| 800 |
VK648 |
30 Amp Epoxy Vridge Rectifiers |
Varo Quality Semiconductor |
| 801 |
W4NRD0X-0000 |
Diameter: 50.8mm; LCW substrates; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
CREE POWER |
| 802 |
W4NRD8C-U000 |
Diameter: 50.8mm; ultra-low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
CREE POWER |
| 803 |
W4NXD8C-0000 |
Diameter: 50.8mm; standatd mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
CREE POWER |
| 804 |
W4NXD8C-L000 |
Diameter: 50.8mm; low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
CREE POWER |
| 805 |
W4NXD8C-S000 |
Diameter: 50.8mm; select mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
CREE POWER |
| 806 |
W4NXD8D-0000 |
Diameter: 50.8mm; standatd mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
CREE POWER |
| 807 |
W4NXD8D-S000 |
Diameter: 50.8mm; select mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
CREE POWER |
| 808 |
W4NXD8G-0000 |
Diameter: 50.8mm; standatd mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
CREE POWER |
| 809 |
W6NRD0X-0000 |
Diameter: 50.8mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
CREE POWER |
| 810 |
W6NRE0X-0000 |
Diameter: 76.2mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
CREE POWER |
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