| No. |
Part Name |
Description |
Manufacturer |
| 781 |
2SC519A |
Industrial Transistor Specification Table |
TOSHIBA |
| 782 |
2SC520A |
Industrial Transistor Specification Table |
TOSHIBA |
| 783 |
2SC521A |
Industrial Transistor Specification Table |
TOSHIBA |
| 784 |
2SC522 |
Industrial Transistor Specification Table |
TOSHIBA |
| 785 |
2SC523 |
Industrial Transistor Specification Table |
TOSHIBA |
| 786 |
2SC524 |
Industrial Transistor Specification Table |
TOSHIBA |
| 787 |
2SC525 |
Industrial Transistor Specification Table |
TOSHIBA |
| 788 |
2SC5335 |
Silicon NPN epitaxial planer type(For low-frequency output amplification) |
Panasonic |
| 789 |
2SC5369 |
NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE AMPLIFICATION |
NEC |
| 790 |
2SC5376FV |
Transistor for low frequency small-signal amplification |
TOSHIBA |
| 791 |
2SC5408 |
NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE HIGH-GAIN AMPLIFICATION |
NEC |
| 792 |
2SC5408-T1 |
NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE HIGH-GAIN AMPLIFICATION |
NEC |
| 793 |
2SC5409 |
NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE HIGH-GAIN AMPLIFICATION |
NEC |
| 794 |
2SC5409-T1 |
NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE HIGH-GAIN AMPLIFICATION |
NEC |
| 795 |
2SC5431-T1 |
Reduced noise high frequency amplification transistor |
NEC |
| 796 |
2SC5432 |
NPN EPITAXIAL SILICON TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION |
NEC |
| 797 |
2SC5432-T1 |
Reduced noise high frequency amplification transistor |
NEC |
| 798 |
2SC5433 |
NPN EPITAXIAL SILICON TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION |
NEC |
| 799 |
2SC5433-T1 |
Reduced noise high frequency amplification transistor |
NEC |
| 800 |
2SC5434 |
NPN EPITAXIAL SILICON TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION |
NEC |
| 801 |
2SC5434-T1 |
Reduced noise high frequency amplification transistor |
NEC |
| 802 |
2SC5435 |
NPN EPITAXIAL SILICON TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION |
NEC |
| 803 |
2SC5435-T1 |
Reduced noise high frequency amplification transistor |
NEC |
| 804 |
2SC5436 |
NPN EPITAXIAL SILICON TRANSISTOR ULTRA SUPER MINI MOLD FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION |
NEC |
| 805 |
2SC5436-T1 |
Reduced noise high frequency amplification transistor |
NEC |
| 806 |
2SC5437 |
NPN EPITAXIAL SILICON TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION |
NEC |
| 807 |
2SC5437-T1 |
Reduced noise high frequency amplification transistor |
NEC |
| 808 |
2SC547 |
Industrial Transistor Specification Table |
TOSHIBA |
| 809 |
2SC5477 |
150mW SMD NPN transistor, maximum rating: 20V Vceo, 50mA Ic, 50 to (typ)148 hFE. High Frequency Amplification |
Isahaya Electronics Corporation |
| 810 |
2SC548 |
Industrial Transistor Specification Table |
TOSHIBA |
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