| No. |
Part Name |
Description |
Manufacturer |
| 781 |
ATFS40 |
Configuration memory used to load the bitstream for AT94K40AL FPSLIC devices. |
Atmel |
| 782 |
AVC16T245DGGR-D |
16-Bit Dual-Supply Bus Transceiver with Configurable Voltage-Level Shifting and 3-State Outputs 48-TSSOP -40 to 85 |
Texas Instruments |
| 783 |
BAR66 |
Silicon PIN Diode Array (Surge protection device Two PIN diodes, series configuration) |
Siemens |
| 784 |
BAR80 |
Silicon RF Switching Diode (Design for use in shunt configuration Hight shunt signal isolation Low shunt insertion loss) |
Siemens |
| 785 |
BAR81 |
Preliminary data Silicon RF Switching Diode (Design for use in shunt configuration High shunt signal isolation Low shunt insertion loss) |
Siemens |
| 786 |
BAR81W |
PIN Diodes - RF switching diode for use in shunt configuration |
Infineon |
| 787 |
BAR81W |
Silicon RF Switching Diode Preliminary data (Design for use in shunt configuration High shunt signal isolation Low shunt insertion loss) |
Siemens |
| 788 |
BAS21U |
General Purpose Diodes - triple diode array in SC74 parallel configuration |
Infineon |
| 789 |
BAT14-098 |
Silicon Schottky Diode (DBS mixer application to 12 GHz Low noise figure Medium barrier type) |
Siemens |
| 790 |
BAT14-099 |
Silicon Dual Schottky Diode (DBS mixer application to 12 GHz Low noise figure Medium barrier type) |
Siemens |
| 791 |
BAT15-03W |
Silicon Schottky Diode (DBS mixer applications to 12 GHz Low noise figure Low barrier type) |
Siemens |
| 792 |
BAT15-04 |
Silicon Dual Schottky Diode (DBS mixer applications to 12 GHz Low noise figure Low barrier type) |
Siemens |
| 793 |
BAT15-098 |
Silicon Schottky Diode (DBS mixer application to 10 GHz Low noise figure Low barrier type) |
Siemens |
| 794 |
BAT15-099 |
Silicon Dual Schottky Diode (DBS mixer application to 12 GHz Low noise figure Low barrier type) |
Siemens |
| 795 |
BAV73 |
Dual high-speed switching diode in common cathode configuration |
Philips |
| 796 |
BB439 |
Silicon Variable Capacitance Diode (For VHF tuned circuit applications High figure of merit) |
Siemens |
| 797 |
BBY33DA-2 |
Silicon Tuning Varactor (Abrupt junction tuning diode Tuning range 25 V High figure of merit) |
Siemens |
| 798 |
BF420A |
Silicon NPN Epitaxial Planar Transistor, letter A specifies the fact that have EBC lead configuration |
IPRS Baneasa |
| 799 |
BF421A |
Silicon PNP Epitaxial Planar Transistor, letter A specifies the fact that have EBC lead configuration |
IPRS Baneasa |
| 800 |
BF422A |
Silicon NPN Epitaxial Planar Transistor, letter A specifies the fact that have EBC lead configuration |
IPRS Baneasa |
| 801 |
BF423A |
Silicon PNP Epitaxial Planar Transistor, letter A specifies the fact that have EBC lead configuration |
IPRS Baneasa |
| 802 |
BF996S |
Silicon N Channel MOSFET Tetrode (For input stages in UHF TV tuners High transconductance Low noise figure) |
Siemens |
| 803 |
BGX50A |
General Purpose Diodes - Silicon Switching Diode Array with bridge configuration |
Infineon |
| 804 |
BGX50A |
Silicon Switching Diode Array (Bridge configuration High-speed switch diode chip) |
Siemens |
| 805 |
BXY42BA-3 |
Silicon PIN Diode (Fast switching In stripline package other lead configurations available) |
Siemens |
| 806 |
CAT34AC02 |
SMBus EEPROM for ACR Card Configuration, 2Kb |
Catalyst Semiconductor |
| 807 |
CAT34ACO2 |
SMBus EEPROM for ACR Card Configuration, 2Kb |
Catalyst Semiconductor |
| 808 |
CAT523J-TE13 |
Configured digitally programmable potentiometer (DPP) |
Catalyst Semiconductor |
| 809 |
CAT523JI-TE13 |
Configured digitally programmable potentiometer (DPP) |
Catalyst Semiconductor |
| 810 |
CAT523P-TE13 |
Configured digitally programmable potentiometer (DPP) |
Catalyst Semiconductor |
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