No. |
Part Name |
Description |
Manufacturer |
781 |
BD90521MUV-CE2 |
2.6V to 5.5V, 2A, 0.3MHz to 2.4MHz Synchronous Step-Down Converter |
ROHM |
782 |
BD90541MUV-C |
2.6V to 5.5V, 2A, 0.3MHz to 2.4MHz Synchronous Step-Down Converter |
ROHM |
783 |
BD90541MUV-CE2 |
2.6V to 5.5V, 2A, 0.3MHz to 2.4MHz Synchronous Step-Down Converter |
ROHM |
784 |
BFS22 |
Silicon NPN planar epitaxial transistor for driver stages in 175 MHz transmitters at 13.5 V supply voltage |
VALVO |
785 |
BFS23 |
Silicon NPN planar epitaxial transistor for driver stages in 175 MHz transmitters at 28 V supply voltage |
VALVO |
786 |
BFY90 |
NPN silicon epitaxial planar RF transistor, 1.4GHz transistion frequency |
ICCE |
787 |
BGA6130 |
400 MHz to 2700 MHz 1 W high efficiency silicon amplifier |
NXP Semiconductors |
788 |
BGA7024 |
400 MHz to 2700 MHz 0.25 W high linearity Si amplifier |
NXP Semiconductors |
789 |
BGA7027 |
400 MHz to 2700 MHz 0.5 W high linearity silicon amplifier |
NXP Semiconductors |
790 |
BGA7124 |
400 MHz to 2700 MHz 0.25 W high linearity silicon amplifier |
NXP Semiconductors |
791 |
BGA7127 |
400 MHz to 2700 MHz 0.5 W high linearity silicon amplifier |
NXP Semiconductors |
792 |
BGA7130 |
400 MHz to 2700 MHz 1 W high linearity silicon amplifier |
NXP Semiconductors |
793 |
BGA7204 |
400 MHz to 2750 MHz high linearity variable gain amplifier |
NXP Semiconductors |
794 |
BGA7210 |
700 MHz to 3800 MHz high linearity variable gain amplifier |
NXP Semiconductors |
795 |
BGA7350 |
50 MHz to 250 MHz high linearity Si variable gain amplifier; 24 dB gain range |
NXP Semiconductors |
796 |
BGA7351 |
50 MHz to 500 MHz high linearity Si variable gain amplifier; 28 dB gain range |
NXP Semiconductors |
797 |
BLD6G21L-50 |
TD-SCDMA 2010 MHz to 2025 MHz fully integrated Doherty transistor |
NXP Semiconductors |
798 |
BLD6G21LS-50 |
TD-SCDMA 2010 MHz to 2025 MHz fully integrated Doherty transistor |
NXP Semiconductors |
799 |
BLD6G22L-50 |
W-CDMA 2110 MHz to 2170 MHz fully integrated Doherty transistor |
NXP Semiconductors |
800 |
BLD6G22LS-50 |
W-CDMA 2110 MHz to 2170 MHz fully integrated Doherty transistor |
NXP Semiconductors |
801 |
BLM6G10-30 |
W-CDMA 860 MHz to 960 MHz power MMIC |
NXP Semiconductors |
802 |
BLM6G10-30G |
W-CDMA 860 MHz to 960 MHz power MMIC |
NXP Semiconductors |
803 |
BLM6G22-30 |
W-CDMA 2100 MHz to 2200 MHz power MMIC |
NXP Semiconductors |
804 |
BLM6G22-30G |
W-CDMA 2100 MHz to 2200 MHz power MMIC |
NXP Semiconductors |
805 |
BLY37 |
Silicon NPN planar epitaxial transistor for power amplifiers in 470 MHz transmitters at 28 V supply voltage |
VALVO |
806 |
BLY38 |
Silicon NPN planar epitaxial transistor for driver stages in 470 MHz transmitters at 13.8 V supply voltage |
VALVO |
807 |
BLY53 |
Silicon NPN planar epitaxial transistor for power amplifiers in 470 MHz transmitters at 13.8 V supply voltage |
VALVO |
808 |
BLY57 |
Silicon NPN planar epitaxial transistor for 175 MHz transmitters at 13.5 V supply voltage |
VALVO |
809 |
BLY58 |
Silicon NPN planar epitaxial transistor for 175 MHz transmitters at 13.5 V supply voltage |
VALVO |
810 |
BLY59 |
Silicon NPN planar epitaxial transistor for 175 MHz transmitters at 28 V supply voltage |
VALVO |
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