| No. |
Part Name |
Description |
Manufacturer |
| 7861 |
ISL706BEH |
Rad-Hard, 5.0V/3.3V �-Processor Supervisory Circuits |
Intersil |
| 7862 |
ISL706BRH |
Rad-Hard, 5.0V/3.3V �-Processor Supervisory Circuits |
Intersil |
| 7863 |
ISL706CEH |
Rad-Hard, 5.0V/3.3V �-Processor Supervisory Circuits |
Intersil |
| 7864 |
ISL706CRH |
Rad-Hard, 5.0V/3.3V �-Processor Supervisory Circuits |
Intersil |
| 7865 |
ISL8394 |
Analog Switch or Multiplexer, SPDT, Quad, 2 x NOpen, 2 x NClosed, Ron 17 @ �5V, Single Supply, +2V to +12V or Dual Supply �2.0V to �6V |
Intersil |
| 7866 |
ISL84521 |
Analog Switch, SPST, Quad, NClosed, Low-Voltage, Ron = 65 @ �5V, 125 @ 5V, 260 @ 3.0V, Single or Dual Supply |
Intersil |
| 7867 |
ISL84522 |
Analog Switch, SPST, Quad, NOpen, Low-Voltage, Ron = 65 @ �5V, 125 @ 5V, 260 @ 3.0V, Single or Dual Supply |
Intersil |
| 7868 |
ISL84523 |
Analog Switch, SPST, Quad, NOpen/NClosed, Low-Voltage, Ron = 65 @ �5V, 125 @ 5V, 260 @ 3.0V, Single or Dual Supply, |
Intersil |
| 7869 |
IXGM17N100 |
4.0V diode |
IXYS |
| 7870 |
IXGM17N100A |
4.0V diode |
IXYS |
| 7871 |
JAN1N4372 |
Military Silicon Zener Diode 400 Milliwatt Low Voltage 3.0V |
Transitron Electronic |
| 7872 |
JZ48F3000L0ZBQ0 |
3.0V, 128-Mbit lead-free StrataFlash Wireless Memory |
Intel |
| 7873 |
JZ48F3000L0ZTQ0 |
3.0V, 128-Mbit lead-free StrataFlash Wireless Memory |
Intel |
| 7874 |
JZ48F4000L0ZBQ0 |
3.0V, 256-Mbit lead-free StrataFlash Wireless Memory |
Intel |
| 7875 |
JZ48F4000L0ZTQ0 |
3.0V, 256-Mbit lead-free StrataFlash Wireless Memory |
Intel |
| 7876 |
K64004C1D |
1Mx4 Bit High Speed Static RAM(5.0V Operating). Operated at Commercial and Industrial Temperature Ranges. |
Samsung Electronic |
| 7877 |
K6F8016V3A-RF55 |
55ns; V(cc): -0.2 to +4.0V; 1W; 512K x 16 bit super low power and low voltage full CMOS static RAM |
Samsung Electronic |
| 7878 |
K6F8016V3A-RF70 |
70ns; V(cc): -0.2 to +4.0V; 1W; 512K x 16 bit super low power and low voltage full CMOS static RAM |
Samsung Electronic |
| 7879 |
K6F8016V3A-TF55 |
55ns; V(cc): -0.2 to +4.0V; 1W; 512K x 16 bit super low power and low voltage full CMOS static RAM |
Samsung Electronic |
| 7880 |
K6F8016V3A-TF70 |
70ns; V(cc): -0.2 to +4.0V; 1W; 512K x 16 bit super low power and low voltage full CMOS static RAM |
Samsung Electronic |
| 7881 |
K6R1004C1D-JC10 |
256Kx4 Bit (with OE) High-Speed CMOS Static RAM(5.0V Operating). |
Samsung Electronic |
| 7882 |
K6R1004C1D-JI10 |
256Kx4 Bit (with OE) High-Speed CMOS Static RAM(5.0V Operating). |
Samsung Electronic |
| 7883 |
K6R1004C1D-KC10 |
256Kx4 Bit (with OE) High-Speed CMOS Static RAM(5.0V Operating). |
Samsung Electronic |
| 7884 |
K6R1004C1D-KI10 |
256Kx4 Bit (with OE) High-Speed CMOS Static RAM(5.0V Operating). |
Samsung Electronic |
| 7885 |
K6R1004V1D-JC08 |
256Kx4 Bit (with OE) High-Speed CMOS Static RAM(5.0V Operating). |
Samsung Electronic |
| 7886 |
K6R1004V1D-JC10 |
256Kx4 Bit (with OE) High-Speed CMOS Static RAM(5.0V Operating). |
Samsung Electronic |
| 7887 |
K6R1004V1D-JI08 |
256Kx4 Bit (with OE) High-Speed CMOS Static RAM(5.0V Operating). |
Samsung Electronic |
| 7888 |
K6R1004V1D-JI10 |
256Kx4 Bit (with OE) High-Speed CMOS Static RAM(5.0V Operating). |
Samsung Electronic |
| 7889 |
K6R1004V1D-KC08 |
256Kx4 Bit (with OE) High-Speed CMOS Static RAM(5.0V Operating). |
Samsung Electronic |
| 7890 |
K6R1004V1D-KC10 |
256Kx4 Bit (with OE) High-Speed CMOS Static RAM(5.0V Operating). |
Samsung Electronic |
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