| No. |
Part Name |
Description |
Manufacturer |
| 7861 |
SSM5G01TU |
Silicon P Channel MOS Type (U-MOSII)/Silicon Epitaxial Schottky Planar Diode DC-DC Converter for DSCs and Camcorders |
TOSHIBA |
| 7862 |
SUD492H |
Silicon epitaxial planar Diode |
AUK Corp |
| 7863 |
SUD494J |
Silicon epitaxial planar Diode |
AUK Corp |
| 7864 |
SUD494N |
Silicon epitaxial planar Diode |
AUK Corp |
| 7865 |
SUR541EF |
NPN Epitaxial Planar Silicon Transistor |
AUK Corp |
| 7866 |
TA7303 |
Silicon NPN Epitaxial Planar RF Transistor |
RCA Solid State |
| 7867 |
TA7319 |
Silicon NPN Epitaxial Planar RF Transistor for UHF Applications in Military Communications and Industrial Equipment |
RCA Solid State |
| 7868 |
TBC337 |
Silicon NPN Epitaxial Transistor (PCT Process) |
TOSHIBA |
| 7869 |
TBC338 |
Silicon NPN Epitaxial Transistor (PCT Process) |
TOSHIBA |
| 7870 |
TBC546 |
Silicon NPN Epitaxial Transistor (PCT Process) |
TOSHIBA |
| 7871 |
TBC547 |
Silicon NPN Epitaxial Transistor (PCT Process) |
TOSHIBA |
| 7872 |
TBC548 |
Silicon NPN Epitaxial Transistor (PCT Process) |
TOSHIBA |
| 7873 |
TBC549 |
Silicon NPN Epitaxial Transistor (PCT Process) |
TOSHIBA |
| 7874 |
TBC550 |
Silicon NPN Epitaxial Transistor (PCT Process) |
TOSHIBA |
| 7875 |
TC1426 |
The TC1426/27/28 are a family of 1.2A dual high- speed drivers. CMOS fabrication is used for low power consumption and high efficiency. These devices are fabricated using an epitaxial layer to effectively short out the intrinsic parasitic |
Microchip |
| 7876 |
TC1427 |
The TC1426/27/28 are a family of 1.2A dual high- speed drivers. CMOS fabrication is used for low power consumption and high efficiency. These devices are fabricated using an epitaxial layer to effectively short out the intrinsic parasitic |
Microchip |
| 7877 |
TC1428 |
The TC1426/27/28 are a family of 1.2A dual high- speed drivers. CMOS fabrication is used for low power consumption and high efficiency. These devices are fabricated using an epitaxial layer to effectively short out the intrinsic parasitic |
Microchip |
| 7878 |
TD163 |
Silicon NPN EPIBASE Darlington Power Transistor |
IPRS Baneasa |
| 7879 |
TD163/1 |
Silicon NPN EPIBASE Darlington Power Transistor |
IPRS Baneasa |
| 7880 |
TD163A |
Silicon NPN EPIBASE Darlington Power Transistor |
IPRS Baneasa |
| 7881 |
TD163B |
Silicon NPN EPIBASE Darlington Power Transistor |
IPRS Baneasa |
| 7882 |
TD163C |
Silicon NPN EPIBASE Darlington Power Transistor |
IPRS Baneasa |
| 7883 |
TD265 |
Silicon NPN EPIBASE Power Darlington Transistor |
IPRS Baneasa |
| 7884 |
TD265/1 |
Silicon NPN EPIBASE Power Darlington Transistor |
IPRS Baneasa |
| 7885 |
TD265A |
Silicon NPN EPIBASE Power Darlington Transistor |
IPRS Baneasa |
| 7886 |
TD265B |
Silicon NPN EPIBASE Power Darlington Transistor |
IPRS Baneasa |
| 7887 |
TD265C |
Silicon NPN EPIBASE Power Darlington Transistor |
IPRS Baneasa |
| 7888 |
TD367 |
Silicon NPN EPIBASE Power Darlington Transistor |
IPRS Baneasa |
| 7889 |
TD367A |
Silicon NPN EPIBASE Power Darlington Transistor |
IPRS Baneasa |
| 7890 |
TD367B |
Silicon NPN EPIBASE Power Darlington Transistor |
IPRS Baneasa |
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