| No. |
Part Name |
Description |
Manufacturer |
| 7951 |
HN27C256H-85 |
ROM(words): 16,386; V(cc): -0.3 to +7.0V; CMOS 4-bit single-chip microcomputer |
Hitachi Semiconductor |
| 7952 |
HN27C256HFP-10T |
256K (32K x 8-bit) UV and OTP EPROM, 100ns |
Hitachi Semiconductor |
| 7953 |
HN27C256HFP-85T |
256K (32K x 8-bit) UV and OTP EPROM, 85ns |
Hitachi Semiconductor |
| 7954 |
HN27C256HG-70 |
256K (32K x 8-bit) UV and OTP EPROM, 70ns |
Hitachi Semiconductor |
| 7955 |
HN27C256HG-85 |
256K (32K x 8-bit) UV and OTP EPROM, 85ns |
Hitachi Semiconductor |
| 7956 |
HN27C256HP-10 |
256K (32K x 8-bit) UV and OTP EPROM, 100ns |
Hitachi Semiconductor |
| 7957 |
HN27C256HP-85 |
256K (32K x 8-bit) UV and OTP EPROM, 85ns |
Hitachi Semiconductor |
| 7958 |
HN27C4000G |
524288-Word � 8-Bit/262144-Word X 16-Bit CMOS UV Erasable and Programmable ROM |
Hitachi Semiconductor |
| 7959 |
HN27C4000G-10 |
524288-Word � 8-Bit/262144-Word X 16-Bit CMOS UV Erasable and Programmable ROM |
Hitachi Semiconductor |
| 7960 |
HN27C4000G-12 |
524288-Word � 8-Bit/262144-Word X 16-Bit CMOS UV Erasable and Programmable ROM |
Hitachi Semiconductor |
| 7961 |
HN27C4000G-15 |
524288-Word � 8-Bit/262144-Word X 16-Bit CMOS UV Erasable and Programmable ROM |
Hitachi Semiconductor |
| 7962 |
HN29V25611ABP |
AND Flash Memories |
Hitachi Semiconductor |
| 7963 |
HN29V51211 |
512M AND type Flash Memory More than 32/113-sector (542/581/248-bit) |
Hitachi Semiconductor |
| 7964 |
HN29V51211T-50 |
512M AND type Flash Memory More than 32/113-sector (542/581/248-bit) |
Hitachi Semiconductor |
| 7965 |
HN29W12811 |
128M AND type Flash Memory More than 8/029-sector (135/657/984-bit) |
Hitachi Semiconductor |
| 7966 |
HN29W12811T-60 |
128M AND type Flash Memory More than 8/029-sector (135/657/984-bit) |
Hitachi Semiconductor |
| 7967 |
HN29W25611 |
256M AND type Flash Memory More than 16/057-sector (271/299/072-bit) |
Hitachi Semiconductor |
| 7968 |
HN29W25611T |
256M AND type Flash Memory More than 16/057-sector (271/299/072-bit) |
Hitachi Semiconductor |
| 7969 |
HN29W25611T-50 |
256M AND type Flash Memory More than 16/057-sector (271/299/072-bit) |
Hitachi Semiconductor |
| 7970 |
HN29W25611T-50H |
256M AND type Flash Memory More than 16/057-sector (271/299/072-bit) |
Hitachi Semiconductor |
| 7971 |
HN43128P |
16384 x 8-bit or 32768 x 4-bit CMOS Mask Programmable Read Only Memory |
Hitachi Semiconductor |
| 7972 |
HN462532 |
4096-word x 8-bit U.V. Erasable and Programmable Read Only Memory |
Hitachi Semiconductor |
| 7973 |
HN462532G |
4096-word x 8-bit U.V. Erasable and Programmable Read Only Memory |
Hitachi Semiconductor |
| 7974 |
HN462532G-2 |
4096-word x 8-bit U.V. Erasable and Programmable Read Only Memory |
Hitachi Semiconductor |
| 7975 |
HN462532GL |
4096-word x 8-bit U.V. Erasable and Programmable Read Only Memory |
Hitachi Semiconductor |
| 7976 |
HN462716 |
2048 word x 8 Bit UV Erasable and EPROM |
Hitachi Semiconductor |
| 7977 |
HN462716G |
2048-WORD x 8-BIT UV ERASABLE AND ELECTRICALLY PROGRAMMABLE ONLY MEMORY |
Hitachi Semiconductor |
| 7978 |
HN462716G-1 |
2048-word x 8-bit U.V. Erasable and Electrically Programmable Read Only Memory |
Hitachi Semiconductor |
| 7979 |
HN462716G-2 |
2048-word x 8-bit U.V. Erasable and Electrically Programmable Read Only Memory |
Hitachi Semiconductor |
| 7980 |
HN462732 |
4096-word x 8-bit U.V. Erasable and Programmable Read Only Memory |
Hitachi Semiconductor |
| | | |
