| No. |
Part Name |
Description |
Manufacturer |
| 7951 |
UTC2000T-E/MG042 |
USB Power Delivery |
Microchip |
| 7952 |
UTC2000T-I/MG |
USB Power Delivery |
Microchip |
| 7953 |
UTC2000T/MG |
USB Power Delivery |
Microchip |
| 7954 |
UTCTL062 |
LOW POWER DUAL J-FET OPERATIONAL AMPLIFIER |
Unisonic Technologies |
| 7955 |
UX-FOB |
High Voltage Power Dioes Standard and Ultra Recovery |
HV Component |
| 7956 |
V62/04646-01XE |
Enhanced Product Digital-To-Analog Converter With Power Down 8-SOIC -55 to 125 |
Texas Instruments |
| 7957 |
V62/11620-01XE |
Enhanced Product Single-Channel Current-Limited Power Distribution Switch 5-SOT-23 -55 to 125 |
Texas Instruments |
| 7958 |
V62/14601-01XE |
Digital Dual Synchronous-Buck Power Driver, UCD7242-EP 32-VQFN-HR -55 to 125 |
Texas Instruments |
| 7959 |
V62/16605-01XE |
Low-Power Dual Digital Isolators 8-SOIC -55 to 125 |
Texas Instruments |
| 7960 |
VSC7127R-QM |
Repeater and port bypass circuit for fibre channel. 3.3 power supply, 700mW power dissipation |
Vitesse Semiconductor Corporation |
| 7961 |
VSC7127T-QM |
Retimer and port bypass circuit for fibre channel. 3.3 power supply, 700mW power dissipation |
Vitesse Semiconductor Corporation |
| 7962 |
VSC7129R-QM |
Repeater and port bypass circuit for fibre channel. 3.3 power supply, 700mW power dissipation |
Vitesse Semiconductor Corporation |
| 7963 |
VSC7129T-QM |
Retimer and port bypass circuit for fibre channel. 3.3 power supply, 700mW power dissipation |
Vitesse Semiconductor Corporation |
| 7964 |
VSC7139TW |
Quad transceiver for fibre channel and Gigabit ethernet. 3.3V power supply, 2.67 W max power dissipation |
Vitesse Semiconductor Corporation |
| 7965 |
VSC7226 |
Quad 10Gb/s backplane transceiver. 2.5V power supply, 2.1W power dissipation |
Vitesse Semiconductor Corporation |
| 7966 |
VSC8171 |
SONET/SDH 16:1 Mux with CMU. 5.2V power supply, 2.6W power dissipation |
Vitesse Semiconductor Corporation |
| 7967 |
VSC8172 |
SONET/SDH 1:16 Demux with CDR. 5.2V/2V power supply, 3.4W power dissipation |
Vitesse Semiconductor Corporation |
| 7968 |
W4NRD0X-0000 |
Diameter: 50.8mm; LCW substrates; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
CREE POWER |
| 7969 |
W4NRD0X-0000 |
Diameter: 50.8mm; LCW substrates; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
CREE POWER |
| 7970 |
W4NRD8C-U000 |
Diameter: 50.8mm; ultra-low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
CREE POWER |
| 7971 |
W4NRD8C-U000 |
Diameter: 50.8mm; ultra-low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
CREE POWER |
| 7972 |
W4NXD8C-0000 |
Diameter: 50.8mm; standatd mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
CREE POWER |
| 7973 |
W4NXD8C-0000 |
Diameter: 50.8mm; standatd mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
CREE POWER |
| 7974 |
W4NXD8C-L000 |
Diameter: 50.8mm; low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
CREE POWER |
| 7975 |
W4NXD8C-L000 |
Diameter: 50.8mm; low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
CREE POWER |
| 7976 |
W4NXD8C-S000 |
Diameter: 50.8mm; select mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
CREE POWER |
| 7977 |
W4NXD8C-S000 |
Diameter: 50.8mm; select mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
CREE POWER |
| 7978 |
W4NXD8D-0000 |
Diameter: 50.8mm; standatd mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
CREE POWER |
| 7979 |
W4NXD8D-0000 |
Diameter: 50.8mm; standatd mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
CREE POWER |
| 7980 |
W4NXD8D-S000 |
Diameter: 50.8mm; select mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
CREE POWER |
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