| No. |
Part Name |
Description |
Manufacturer |
| 7981 |
BSY39 |
Silicon NPN planar-epitaxial switching transistor |
VALVO |
| 7982 |
BSY46 |
Silicon NPN Planar-Epitaxial HF and Switching Transistor |
TELEFUNKEN |
| 7983 |
BSY55 |
Silicon NPN Epitaxial Planar Switching Transistor |
AEG-TELEFUNKEN |
| 7984 |
BSY55 |
Silicon NPN epitaxial planar transistor for high speed switching applications and RF aplifiers |
AEG-TELEFUNKEN |
| 7985 |
BSY56 |
Silicon NPN Epitaxial Planar Switching Transistor |
AEG-TELEFUNKEN |
| 7986 |
BSY56 |
Silicon NPN epitaxial planar transistor for high speed switching applications and RF aplifiers |
AEG-TELEFUNKEN |
| 7987 |
BSY58 |
Double-diffused epitaxial NPN silicon RF Transistor in planar technology |
TUNGSRAM |
| 7988 |
BSY70 |
Silicon NPN Planar-Epitaxial Very Fast Switching Transistor |
TELEFUNKEN |
| 7989 |
BSY88 |
NPN SILICON PLANAR EPITAXIAL TRANSISTOR |
Micro Electronics |
| 7990 |
BSY93 |
Silicon NPN epitaxial planar transistor with medium reverse voltage for switching and RF applications |
AEG-TELEFUNKEN |
| 7991 |
BU125S |
Silicon epitaxial planar NPN high voltage transistor |
SGS-ATES |
| 7992 |
BU126 |
NPN silicon multiepitaxial transistor |
Mikroelektronikai Vallalat |
| 7993 |
BU126A |
NPN silicon multiepitaxial transistor |
Mikroelektronikai Vallalat |
| 7994 |
BU326A |
NPN silicon, multiepitaxial transistor |
Mikroelektronikai Vallalat |
| 7995 |
BU326S |
NPN silicon, multiepitaxial transistor |
Mikroelektronikai Vallalat |
| 7996 |
BU326S |
Silicon multiepitaxial biplanar® NPN high voltage power transistor intended for switch-mode CTV applications |
SGS-ATES |
| 7997 |
BU406 |
NPN Epitaxial Silicon Transistor |
Fairchild Semiconductor |
| 7998 |
BU406 |
400 V, 7 A, NPN epitaxial silicon transistor |
Samsung Electronic |
| 7999 |
BU406 |
Silicon epitaxial planar NPN transistor, fast switchingm high voltage for use in TV horizontal deflection |
SGS-ATES |
| 8000 |
BU406 |
NPN EPITAXIAL SILICON TRANSISTOR(HIGH VOLTAGE SWITCHING USE IN HORIZONTAL DEFLECTION OUTPUT STAGE) |
Wing Shing Computer Components |
| 8001 |
BU406D |
Silicon planar epitaxial NPN transistor with integrated damper diode for use in horizontal TV deflectors |
SGS-ATES |
| 8002 |
BU406D |
NPN EPITAXIAL SILICON TRANSISTOR(HIGH VOLTAGE SWITCHING USE IN HORIZONTAL DEFLECTION OUTPUT STAGE) |
Wing Shing Computer Components |
| 8003 |
BU406H |
NPN Epitaxial Silicon Transistor |
Fairchild Semiconductor |
| 8004 |
BU406H |
400 V, 7 A, NPN epitaxial silicon transistor |
Samsung Electronic |
| 8005 |
BU406H |
Silicon epitaxial planar NPN transistor, fast switchingm high voltage for use in TV horizontal deflection |
SGS-ATES |
| 8006 |
BU406H |
NPN epitaxial silicon transistor. High voltage switching for horizontal deflection output stage. Collector-base voltage 400V. Collector-emitter voltage 200V. Emitter-base voltage 6V. |
Wing Shing Computer Components |
| 8007 |
BU406TU |
NPN Epitaxial Silicon Transistor |
Fairchild Semiconductor |
| 8008 |
BU407 |
NPN Epitaxial Silicon Transistor |
Fairchild Semiconductor |
| 8009 |
BU407 |
NPN EPITAXIAL SILICON TRANSISTOR |
Samsung Electronic |
| 8010 |
BU407 |
Silicon epitaxial planar NPN transistor for use in horizontal TV deflectors |
SGS-ATES |
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