No. |
Part Name |
Description |
Manufacturer |
7981 |
ACA2407E |
The ACA2407E is a highly linear, monolithic GaAs RF amplifier that has been developed to replace, in new desgins, standard CATV hybrid ... |
Anadigics Inc |
7982 |
AD-01 |
Application Note - Designing with High-Speed Analog-to-Digital Converters |
Comlinear Corporation |
7983 |
AD149 |
Application Note - Power amplifier |
COMPELEC |
7984 |
AD558 |
Application Note - Interfacing the AD558 DACPORT™ to Microrocessors |
Analog Devices |
7985 |
AD7528 |
Dual 8-Bit CMOS DAC Application Note |
Analog Devices |
7986 |
AD7574 |
Application Note - The AD7574 Analog to Microprocessor Interface |
Analog Devices |
7987 |
ADM8211 |
IEEE802.11b WLAN NIC Solution |
ADMtek |
7988 |
AF102 |
Application Note - Common base IF amplifier stage |
COMPELEC |
7989 |
AF118 |
Application note - video output stages |
COMPELEC |
7990 |
AF121 |
Application Note - 100MHz preamplifier |
COMPELEC |
7991 |
AF124 |
Application Note - Schematic example of Tuner FM |
COMPELEC |
7992 |
AF125 |
Application Note - Schematic example of Tuner FM |
COMPELEC |
7993 |
AF126 |
Application note - example of FI amplifier 10.7MHz |
COMPELEC |
7994 |
AF185 |
Application Note - HF stage for automobile radio receiver |
COMPELEC |
7995 |
AK520S |
ISDN NT1 Transceiver |
AKM |
7996 |
AM0405-030 |
Gold metallized silicon NPN pulse power transistor, 420-450MHz 30W |
SGS Thomson Microelectronics |
7997 |
AM0405-100 |
Gold metallized silicon NPN pulse power transistor, 420-450MHz 100W |
SGS Thomson Microelectronics |
7998 |
AM1416-001 |
Common base, silicon NPN bipolar device optimized for Class C, CW operation in the 1400-1600MHz |
SGS Thomson Microelectronics |
7999 |
AM1416-003 |
Common base, silicon NPN bipolar device optimized for Class C, CW operation in the 1400-1600MHz |
SGS Thomson Microelectronics |
8000 |
AM7996 |
Am7996 IEEE-802.3 (Ethernet/Cheapernet) Transceiver Application Note |
Advanced Micro Devices |
8001 |
AM81416-006 |
Common base, silicon NPN bipolar device optimized for Class C, CW operation in the 1400-1600MHz |
SGS Thomson Microelectronics |
8002 |
AM81416-012 |
Common base, silicon NPN bipolar device optimized for Class C, CW operation in the 1400-1600MHz |
SGS Thomson Microelectronics |
8003 |
AM81416-020 |
Common base, silicon NPN bipolar device optimized for Class C, CW operation in the 1400-1600MHz |
SGS Thomson Microelectronics |
8004 |
AM82223-004 |
Common base, silicon NPN bipolar transistor designed for high gain and eficiency in the 2.2-2.3GHz |
SGS Thomson Microelectronics |
8005 |
AM82223-012 |
Common base, silicon NPN bipolar transistor designed for high gain and eficiency in the 2.2-2.3GHz |
SGS Thomson Microelectronics |
8006 |
AM82223-014 |
Common base, silicon NPN bipolar transistor designed for high gain and eficiency in the 2.2-2.3GHz |
SGS Thomson Microelectronics |
8007 |
AM82223-018 |
Common base, silicon NPN bipolar transistor designed for high gain and eficiency in the 2.2-2.3GHz |
SGS Thomson Microelectronics |
8008 |
AM82223-020 |
Common base, silicon NPN bipolar transistor designed for high gain and eficiency in the 2.2-2.3GHz |
SGS Thomson Microelectronics |
8009 |
AM82324-020 |
Common base, silicon NPN bipolar transistor designed for high gain and eficiency in the 2.3-2.4GHz |
SGS Thomson Microelectronics |
8010 |
AM82325-040 |
High power silicon NPN bipolar device optimized for specialized pulsed applications in the 2.3-2.5GHz |
SGS Thomson Microelectronics |
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