No. |
Part Name |
Description |
Manufacturer |
8011 |
G9611DP1T |
2.5 V, 300mA low-dropout linear regulator with reset |
Global Mixed-mode Technology |
8012 |
G9611DP1U |
2.5 V, 300mA low-dropout linear regulator with reset |
Global Mixed-mode Technology |
8013 |
GAL16V8D-30LD_883 |
High performance E2CMOS PLD generic array logic, 30ns |
Lattice Semiconductor |
8014 |
GC5018 |
8 channel wideband digital down converter with front end AGC 305-BGA -40 to 85 |
Texas Instruments |
8015 |
GC5018IZDL |
8 channel wideband digital down converter with front end AGC 305-BGA -40 to 85 |
Texas Instruments |
8016 |
GD120 |
Germanium PNP power transistor for power amplifiers and switching applications up to 30V in the low frequency range |
RFT |
8017 |
GES2218 |
Planar epitaxial NPN silicon transistor. 30V, 800mA. |
General Electric Solid State |
8018 |
GES2219 |
Planar epitaxial NPN silicon transistor. 30V, 800mA. |
General Electric Solid State |
8019 |
GES2221 |
Planar passivated epitaxial NPN silicon transistor. 30V, 400mA. |
General Electric Solid State |
8020 |
GES2222 |
Planar passivated epitaxial NPN silicon transistor. 30V, 400mA. |
General Electric Solid State |
8021 |
GES2646 |
Silicon unijunction transistor. 30V, 50mA. |
General Electric Solid State |
8022 |
GES2647 |
Silicon unijunction transistor. 30V, 50mA. |
General Electric Solid State |
8023 |
GES5307 |
Planar epitaxial passivated NPN silicon Darlington transistor. 40V, 300mA. |
General Electric Solid State |
8024 |
GES5308 |
Planar epitaxial passivated NPN silicon Darlington transistor. 40V, 300mA. |
General Electric Solid State |
8025 |
GES5308A |
Planar epitaxial passivated NPN silicon Darlington transistor. 40V, 300mA. |
General Electric Solid State |
8026 |
GET4870 |
Silicon unijunction transistor. 30V, 50mA. |
General Electric Solid State |
8027 |
GET4871 |
Silicon unijunction transistor. 30V, 50mA. |
General Electric Solid State |
8028 |
GL607 |
10 V, 300 mA, gold bonded germanium diode |
BKC International Electronics |
8029 |
GMKPG 3000-9µF |
MKP-HC, High Current Capacitors, Type GMKPg3000-9µF |
Vishay |
8030 |
GMS34004TK |
4-bit single chip microcomputer. Program memory 512 bytes. Data memory 32 x 4. Input ports 4. Output ports 6. Operating frequency 300KHz-500KHz at KHz version |
Hynix Semiconductor |
8031 |
GMS34004TK |
Program memory: 512 bytes, 300KHz-500KHz, 4-5 V, 4 BIT single chip microcomputer |
Hynix Semiconductor |
8032 |
GMS34004TM |
Program memory: 512 bytes, 300KHz-500KHz, 4-5 V, 4 BIT single chip microcomputer |
Hynix Semiconductor |
8033 |
GMS34004TW |
Program memory: 512 bytes, 300KHz-500KHz, 4-5 V, 4 BIT single chip microcomputer |
Hynix Semiconductor |
8034 |
GMS34004TW |
4-bit single chip microcomputer. Program memory 512 bytes. Data memory 32 x 4. Input ports 4. Output ports 6. Operating frequency 300KHz-4.2MHz at WIDE version |
Hynix Semiconductor |
8035 |
GMS34112TK |
Program memory:1024 bytes, 300KHz-500KHz, 4-5 V, 4 BIT single chip microcomputer |
Hynix Semiconductor |
8036 |
GMS34112TK |
4-bit single chip microcomputer. Program memory 1.024 bytes. Data memory 32 x 4. I/O ports 4. Input ports 4. Output ports 6. Operating frequency 300KHz-500KHz at KHz version. Low operating voltage 2.2-4.5V |
Hynix Semiconductor |
8037 |
GMS34112TM |
Program memory: 1024 bytes, 300KHz-500KHz, 4-5 V, 4 BIT single chip microcomputer |
Hynix Semiconductor |
8038 |
GMS34112TW |
Program memory: 1024 bytes, 300KHz-500KHz, 4-5 V, 4 BIT single chip microcomputer |
Hynix Semiconductor |
8039 |
GMS34112TW |
4-bit single chip microcomputer. Program memory 1.024 bytes. Data memory 32 x 4. I/O ports 4. Input ports 4. Output ports 6. Operating frequency 300KHz-4.2MHz at WIDE version. Normal operating voltage 4.0-5.0V |
Hynix Semiconductor |
8040 |
GMS34140TK |
Program memory: 1024 bytes, 300KHz-500KHz, 4-5 V, 4 BIT single chip microcomputer |
Hynix Semiconductor |
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