| No. |
Part Name |
Description |
Manufacturer |
| 8041 |
KAQV210B |
5.0V, 1A high voltage relay |
Cosmo Electronics |
| 8042 |
KAQV210S |
5.0V, 1A high voltage relay |
Cosmo Electronics |
| 8043 |
KAQV210SB |
5.0V, 1A high voltage relay |
Cosmo Electronics |
| 8044 |
KAQV414 |
5.0V, 1A high voltage relay |
Cosmo Electronics |
| 8045 |
KAQV414A |
5.0V, 1A high voltage relay |
Cosmo Electronics |
| 8046 |
KAQW210A |
5.0V, 1A high voltage relay |
Cosmo Electronics |
| 8047 |
KAQW210TSB |
5.0V, 1A high voltage relay |
Cosmo Electronics |
| 8048 |
KAQW214A |
5.0V, 1A high voltage relay |
Cosmo Electronics |
| 8049 |
KAQW614A |
5.0V, 1A high voltage relay |
Cosmo Electronics |
| 8050 |
KAQY210AB |
5.0V, 1A high voltage relay |
Cosmo Electronics |
| 8051 |
KAQY210B |
5.0V, 1A high voltage relay |
Cosmo Electronics |
| 8052 |
KAQY214A |
5.0V, 1A high voltage relay |
Cosmo Electronics |
| 8053 |
KDZ2.0V |
Zener Diode |
Korea Electronics (KEC) |
| 8054 |
KDZ3.0V |
Zener Diode |
Korea Electronics (KEC) |
| 8055 |
KDZ3.0VV |
Zener Diode |
Korea Electronics (KEC) |
| 8056 |
KDZ7.0V |
Zener Diode |
Korea Electronics (KEC) |
| 8057 |
KM416C1004CJ-45 |
1M x 16Bit CMOS dynamic RAM with extended data out, 45ns, VCC=5.0V, refresh period=64ms |
Samsung Electronic |
| 8058 |
KM416C1004CJ-5 |
1M x 16Bit CMOS dynamic RAM with extended data out, 50ns, VCC=5.0V, refresh period=64ms |
Samsung Electronic |
| 8059 |
KM416C1004CJ-6 |
1M x 16Bit CMOS dynamic RAM with extended data out, 60ns, VCC=5.0V, refresh period=64ms |
Samsung Electronic |
| 8060 |
KM416C1004CJL-45 |
1M x 16Bit CMOS dynamic RAM with extended data out, 45ns, VCC=5.0V, self-refresh |
Samsung Electronic |
| 8061 |
KM416C1004CJL-5 |
1M x 16Bit CMOS dynamic RAM with extended data out, 50ns, VCC=5.0V, self-refresh |
Samsung Electronic |
| 8062 |
KM416C1004CJL-6 |
1M x 16Bit CMOS dynamic RAM with extended data out, 60ns, VCC=5.0V, self-refresh |
Samsung Electronic |
| 8063 |
KM416C1004CTL-45 |
1M x 16Bit CMOS dynamic RAM with extended data out, 45ns, VCC=5.0V, self-refresh |
Samsung Electronic |
| 8064 |
KM416C1004CTL-5 |
1M x 16Bit CMOS dynamic RAM with extended data out, 50ns, VCC=5.0V, self-refresh |
Samsung Electronic |
| 8065 |
KM416C1004CTL-6 |
1M x 16Bit CMOS dynamic RAM with extended data out, 60ns, VCC=5.0V, self-refresh |
Samsung Electronic |
| 8066 |
KM416C1204CJ-45 |
1M x 16Bit CMOS dynamic RAM with extended data out, 45ns, VCC=5.0V, refresh period=16ms |
Samsung Electronic |
| 8067 |
KM416C1204CJ-50 |
1M x 16Bit CMOS dynamic RAM with extended data out, 50ns, VCC=5.0V, refresh period=16ms |
Samsung Electronic |
| 8068 |
KM416C1204CJ-60 |
1M x 16Bit CMOS dynamic RAM with extended data out, 60ns, VCC=5.0V, refresh period=16ms |
Samsung Electronic |
| 8069 |
KM416C1204CJL-45 |
1M x 16Bit CMOS dynamic RAM with extended data out, 45ns, VCC=5.0V, self-refresh |
Samsung Electronic |
| 8070 |
KM416C1204CJL-50 |
1M x 16Bit CMOS dynamic RAM with extended data out, 50ns, VCC=5.0V, self-refresh |
Samsung Electronic |
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