No. |
Part Name |
Description |
Manufacturer |
8041 |
BB804 |
Surface mount switching diode. |
Jinan Gude Electronic Device |
8042 |
BB814 |
Surface mount switching diode. |
Jinan Gude Electronic Device |
8043 |
BB824 |
Surface mount switching diode. |
Jinan Gude Electronic Device |
8044 |
BC140 |
NPN Silicon Transistor for AF amplifiers and switching applications up to 1A |
Siemens |
8045 |
BC140 paired |
NPN Silicon Transistor for AF amplifiers and switching applications up to 1A |
Siemens |
8046 |
BC140-10 |
NPN Silicon Transistor for AF amplifiers and switching applications up to 1A |
Siemens |
8047 |
BC140-16 |
NPN Silicon Transistor for AF amplifiers and switching applications up to 1A |
Siemens |
8048 |
BC140-6 |
NPN Silicon Transistor for AF amplifiers and switching applications up to 1A |
Siemens |
8049 |
BC140/BC160 paired |
NPN Silicon Transistor for AF amplifiers and switching applications up to 1A |
Siemens |
8050 |
BC141 |
NPN Silicon Transistor for AF amplifiers and switching applications up to 1A |
Siemens |
8051 |
BC141 paired |
NPN Silicon Transistor for AF amplifiers and switching applications up to 1A |
Siemens |
8052 |
BC141-10 |
NPN Silicon Transistor for AF amplifiers and switching applications up to 1A |
Siemens |
8053 |
BC141-16 |
NPN Silicon Transistor for AF amplifiers and switching applications up to 1A |
Siemens |
8054 |
BC141-6 |
NPN Silicon Transistor for AF amplifiers and switching applications up to 1A |
Siemens |
8055 |
BC141/BC161 paired |
NPN Silicon Transistor for AF amplifiers and switching applications up to 1A |
Siemens |
8056 |
BC237 |
Switching and Amplifier Applications |
Fairchild Semiconductor |
8057 |
BC237 |
Transistor. Switching and amplifier applications. Collector-base voltage Vcbo = 50V. Collector-emitter voltage Vceo = 45V. Emitter-base voltage Vebo = 6V. Collector dissipation Pc(max) = 500mW. Collector current Ic = 100mA. |
USHA India LTD |
8058 |
BC238 |
Switching and Amplifier Applications |
Fairchild Semiconductor |
8059 |
BC238 |
Transistor. Switching and amplifier applications. Collector-base voltage Vcbo = 30V. Collector-emitter voltage Vceo = 25V. Emitter-base voltage Vebo = 6V. Collector dissipation Pc(max) = 500mW. Collector current Ic = 100mA. |
USHA India LTD |
8060 |
BC239 |
Switching and Amplifier Applications |
Fairchild Semiconductor |
8061 |
BC239 |
Transistor. Switching and amplifier applications. Collector-base voltage Vcbo = 30V. Collector-emitter voltage Vceo = 25V. Emitter-base voltage Vebo = 6V. Collector dissipation Pc(max) = 500mW. Collector current Ic = 100mA. |
USHA India LTD |
8062 |
BC307 |
Switching and Amplifier Applications |
Fairchild Semiconductor |
8063 |
BC307 |
Transistor. Switching and amplifier applications. Collector-base voltage Vcbo = -50V. Collector-emitter voltage Vceo = -45V. Emitter-base voltage Vebo = -5V. Collector dissipation Pc(max) = 500mW. Collector current Ic = -100mA. |
USHA India LTD |
8064 |
BC308 |
Switching and Amplifier Applications |
Fairchild Semiconductor |
8065 |
BC308 |
Transistor. Switching and amplifier applications. Collector-base voltage Vcbo = -30V. Collector-emitter voltage Vceo = -25V. Emitter-base voltage Vebo = -5V. Collector dissipation Pc(max) = 500mW. Collector current Ic = -100mA. |
USHA India LTD |
8066 |
BC309 |
Switching and Amplifier Applications |
Fairchild Semiconductor |
8067 |
BC309 |
Transistor. Switching and amplifier applications. Collector-base voltage Vcbo = -30V. Collector-emitter voltage Vceo = -25V. Emitter-base voltage Vebo = -5V. Collector dissipation Pc(max) = 500mW. Collector current Ic = -100mA. |
USHA India LTD |
8068 |
BC327 |
Switching and Amplifier Applications |
Fairchild Semiconductor |
8069 |
BC327 |
PNP Silicon Epitaxial Planar Transistor for switching and amplifier applications |
Semtech |
8070 |
BC327 |
Transistor. Switching and amplifier applications. Collector-base voltage Vcbo = -50V. Collector-emitter voltage Vceo = -45V. Emitter-base voltage Vebo = -5V. Collector dissipation Pc(max) = 625mW. Collector current Ic = -800mA. |
USHA India LTD |
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